Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

Abstract: Example embodiments provide a compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same.

Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, photoelectronic conversion layer between the first electrode and the second electrode and including a first material and a second material providing a p-n junction and an interlayer being adjacent to the first electrode between the first electrode and the photoelectronic conversion layer and including a third material, wherein the first material and the third material are an organic material having each energy bandgap of about 1.7 eV to about 2.3 eV, and an image sensor including the same is provided.

Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor and an electronic device include the same.

Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer including the compound represented by Chemical Formula 1 between the first electrode and the second electrode.

Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes an n-type semiconductor compound that is transparent in a visible ray region and represented by Chemical Formula 1, and a p-type semiconductor compound having a maximum absorption wavelength in a wavelength region of about 500 nm to about 600 nm of a visible ray region.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region. The transparent second compound has an absorption coefficient in a thin film state of less than or equal to about 0.1×105 cm?1 in a wavelength region of about 450 nm to about 700 nm.

Abstract: Example embodiments relate to an organic photoelectronic device including a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a first compound represented by the following Chemical Formula 1, and an image sensor including the organic photoelectronic device.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a heterojunction of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor including a compound represented by Chemical Formula 1.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region.

Abstract: A gas barrier thin film having a substrate, an anchoring layer, and an inorganic oxide layer, the anchoring layer including a silicon-containing organic-inorganic composite copolymer comprising a repeating unit of the formula —(SiO)n—, a repeating unit of the formula —(SiR1R2—NR3)m—, and at least one or a combination of repeating units of the formulas wherein at least one of R1, R2, and R3 is independently hydrogen, R1, R2, and R3 are each independently C1-C5 alkyl, C2-C5 alkenyl, C2-C5 alkynyl, C1-C5 alkoxyl, or C6-C15 aryl, R4, R5, R6, and R7 are each independently hydrogen, C1-C3 alkyl, C1-C3 alkoxyl, C3-C10 cycloalkyl, or C6-C15 aryl, R4 and R5 are not simultaneously hydrogen, R6 and R7 are not simultaneously hydrogen, n+m+r=1, 0<n<1, 0<m<1, and 0<r<1, ‘n’, ‘m’, and ‘r’ are each a molar ratio, ‘r’ is p, q, or p+q, and a degree of polymerization is about 1,000 to about 1,000,000.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a heterojunction of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor including a compound represented by Chemical Formula 1.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode and including a first compound represented by Chemical Formula 1 or 2, and a ratio between a FWHM of a light absorption curve depending on a wavelength of the first compound in a solution state and in a thin film state satisfies the following Relationship Equation 1: FWHM2/FWHM1<2.5. In the Relationship Equation 1, FWHM1 is a FWHM of the light absorption curve depending on a wavelength in a solution state, and FWHM2 is a FWHM of the light absorption curve depending on a wavelength in a thin film state.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode and including a first compound represented by Chemical Formula 1 or 2, and a ratio between a FWHM of a light absorption curve depending on a wavelength of the first compound in a solution state and in a thin film state satisfies the following Relationship Equation 1: FWHM2/FWHM1<2.5. In the Relationship Equation 1, FWHM1 is a FWHM of the light absorption curve depending on a wavelength in a solution state, and FWHM2 is a FWHM of the light absorption curve depending on a wavelength in a thin film state.

Abstract: A compound is represented by Chemical Formula 1: X1-T-X2 wherein T is a substituted or unsubstituted fused thiophene moiety, and each of X1 and X2 are independently an organic group including an alkenylene group and an electron withdrawing group.

Abstract: A multilayer film is provided. The multilayer film includes a barrier layer and an adhesive layer underlying the barrier layer. The adhesive layer contains a block copolymer that can phase separate into two or more different domains. The multilayer film has good gas and moisture barrier properties and is highly flexible. Therefore, the multilayer film can be effectively used in manufacturing encapsulation structures for electronic devices. In addition, the multilayer film is suitable for use as a substrate for a device. Further provided are a method for producing the multilayer film and an encapsulation structure including the multilayer film.

Abstract: Disclosed herein are a thin layer having a composition gradient and a method for the production of the thin layer. According to the method, the thin layer is produced by subjecting a mixture of one or more organic materials and one or more inorganic materials to a sol-gel process. The composition gradient and the surface energy of the thin layer are controlled during production, leaving no interfacial failure defects.