Abstract: The invention relates to a method of directional self-assembly lithography, said method comprising a step of depositing a block copolymer film on a layer (20) neutral with respect the block copolymer, said block copolymer film being for use as a lithography mask, said method being characterized in that it comprises the following steps of: depositing said neutral layer (20) on a surface of a substrate (10), said neutral layer (20) being of the carbon or fluoro-carbon type deposited to a thickness greater than 1.

Abstract: A process for transfer imprinting using a novel family of anti-sticking layers, such as for nanoimprint lithography processes, is described.

Abstract: A process for transfer imprinting using a novel family of anti-sticking layers, such as for nanoimprint lithography processes, is described.

Abstract: The invention relates to a crosslinkable prepolymer composition for use as a contrast layer. It also relates to a method for structuring an interface material. This method is characterized in particular by the following steps: depositing, on a block copolymer film, a prepolymer composition layer comprising a plurality of functional monomers and at least one crosslinkable functional group within its polymer chain and, on the other hand, two chemically different crosslinking agents, each agent being capable of initiating the crosslinking of said prepolymer in response to a stimulation specific thereto, subjecting the stack to a first stimulation localized on first areas, so as to cause a crosslinking reaction of the molecular chains of said prepolymer, and subjecting the stack to a second stimulation, so as to cause crosslinking of the molecular chains of said prepolymer by the action of said second crosslinking agent in secondary areas.

Abstract: The invention relates to a crosslinkable prepolymer composition for use as a contrast layer. It also relates to a method for structuring an interface material. This method is characterized in particular by the following steps: depositing, on a block copolymer film, a prepolymer composition layer comprising a plurality of functional monomers and at least one crosslinkable functional group within its polymer chain and, on the other hand, two chemically different crosslinking agents, each agent being capable of initiating the crosslinking of said prepolymer in response to a stimulation specific thereto, subjecting the stack to a first stimulation localized on first areas, so as to cause a crosslinking reaction of the molecular chains of said prepolymer, and subjecting the stack to a second stimulation, so as to cause crosslinking of the molecular chains of said prepolymer by the action of said second crosslinking agent in secondary areas.

Abstract: The invention relates to a method for nanostructuring a substrate (10) for the preparation of a nanostructured substrate having nanostructures of different dimensions, the method including removing the crosslinked polymer layer (TC) and one of the blocks of the nanostructured block copolymer so as to form patterns of a nanolithography mask; said method being characterized in that the removal of one of the blocks is a removal of only a portion of the nanodomains (21, 22) of one of the blocks of the nanostructured block copolymer, in particular of only the perpendicular nanodomains (Z1) of said block, such that the parallel nanodomains (21, 22) of at least two blocks of the nanostructured block copolymer form patterns of the nanolithography mask; and so as to generate in the nanolithography mask patterns (M1, M2, M3) of different dimensions and nanostructures in the nanostructured substrate of different dimensions after etching.

Abstract: The invention relates to a method for manufacturing a flat polymeric stack, said stack comprising one or more first and one second layer of (co)polymer (20, 30) stacked one on the other, the first underlying (co)polymer layer (20) not having undergone any prior treatment allowing its crosslinking, at least one of the (co)polymer layers initially being in a liquid or viscous state, said method being characterized in that the upper layer (30), known as the top coat (TC), is deposited on the first layer (20) in the form of a prepolymer composition (pre-TC), comprising one or more monomer(s) and/or dimer(s) and/or oligomer(s) and/or polymer(s) in solution, and in that it is then subjected to a heat treatment capable of causing a crosslinking reaction of the molecular chains within said layer (30, TC).

Abstract: A method for forming a chemical guiding structure intended for the self-assembly of a block copolymer by chemoepitaxy, includes forming on a substrate at least one initial pattern made of a first grafted polymer material having a first molar mass and a first chemical affinity with respect to the block copolymer; covering the initial pattern and a region of the substrate adjacent to the initial pattern with a layer including a second graftable polymer material, the second polymer material having a second molar mass, greater than the first molar mass, and a second chemical affinity with respect to the block copolymer, different from the first chemical affinity; and grafting the second polymer material in the region adjacent to the initial pattern.

Abstract: A process for transfer imprinting using a novel family of anti-sticking layers, such as for nanoimprint lithography processes, is described.

Abstract: A method for the directed self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern, the guide pattern having a cavity with a bottom and side walls; forming a functionalisation layer on the guide pattern that has a first portion and a second portion disposed, respectively, on the bottom and side walls of the cavity; forming a protective layer on the first and second portions of the functionalisation layer; etching the protective layer and the second portion of the functionalisation layer such that a portion of the protective layer is retained and the side walls of the cavity are exposed, the retained portion of the protective layer having a thickness of less than 15 nm; selectively etching the portion of the protective layer relative to the first portion of the functionalisation layer and to the guide pattern; and depositing a block copolymer in the cavity.

Abstract: A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.

Abstract: The invention relates to a method for manufacturing a flat polymeric stack, said stack comprising one or more first and one second layer of (co)polymer (20, 30) stacked one on the other, the first underlying (co)polymer layer (20) not having undergone any prior treatment allowing its crosslinking, at least one of the (co)polymer layers initially being in a liquid or viscous state, said method being characterized in that the upper layer (30), known as the top coat (TC), is deposited on the first layer (20) in the form of a prepolymer composition (pre-TC), comprising one or more monomer(s) and/or dimer(s) and/or oligomer(s) and/or polymer(s) in solution, and in that it is then subjected to a heat treatment capable of causing a crosslinking reaction of the molecular chains within said layer (30, TC).

Abstract: The invention relates to a method for manufacturing a flat polymeric stack, said stack comprising one or more first and one second layer of (co)polymer (20, 30) stacked one on the other, the first underlying (co)polymer layer (20) not having undergone any prior treatment allowing its crosslinking, at least one of the (co)polymer layers initially being in a liquid or viscous state, said method being characterized in that the upper layer (30), known as the top coat (TC), is deposited on the first layer (20) in the form of a prepolymer composition (pre-TC), comprising one or more monomer(s) and/or dimer(s) and/or oligomer(s) and/or polymer(s) in solution, and in that it is then subjected to a stimulus capable of causing a crosslinking reaction of the molecular chains within said layer (30, TC).

Abstract: A method for forming a chemical guiding structure intended for self-assembly of a block copolymer by chemoepitaxy, where the method includes forming on a substrate a functionalisation layer made of a first polymer material having a first chemical affinity with respect to the block copolymer; forming on the substrate guiding patterns made of a second polymer material having a second chemical affinity with respect to the block copolymer, different from the first chemical affinity, and wherein the guiding to patterns have a critical dimension of less than 12.5 nm and are formed by means of a mask comprising spacers.

Abstract: A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.

Abstract: A method for forming a functionalised guide pattern for the self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern made of a first material having a first chemical affinity for the block copolymer, the guide pattern having a cavity with a bottom and side walls; grafting a functionalisation layer made of a second polymeric material having a second chemical affinity for the block copolymer, the functionalisation layer having a first portion grafted onto the bottom of the cavity and a second portion grafted onto the side walls of the cavity; selectively etching the second portion of the functionalisation layer relative to the first portion of the functionalisation layer, the etching including a step of exposure to an ion beam following a direction that intersects the second portion of the functionalisation layer, such that the ion beam does not reach the first portion of the functionalisation layer.

Abstract: The invention relates to a process for controlling the orientation of the nanodomains of a block copolymer (BCP), the lower interface of which is in contact with the surface, neutralized beforehand, of a substrate, the said block copolymer being capable of nanostructuring itself to give nanodomains with a predetermined period (L0), over a minimum thickness (t) at least equal to half of the said period (L0), the said process being characterized in that it consists in depositing the said block copolymer (BCP) on the said substrate, so that its total thickness (T+t) is at least two times greater and preferably at least three times greater than the said minimum thickness (t), and in then depositing, on the said block copolymer (BCP), an interface material which makes it possible to isolate it from the ambient atmosphere.

Abstract: Provided is a process for controlling the critical dimension uniformity of ordered films of block copolymers on a nanometric scale. The invention also relates to the compositions used for controlling the critical dimension uniformity of ordered films of block copolymers and to the resulting ordered films that can be used in particular as masks in the lithography field.

Abstract: A method for the directed self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern, the guide pattern having a cavity with a bottom and side walls; forming a functionalisation layer on the guide pattern that has a first portion and a second portion disposed, respectively, on the bottom and side walls of the cavity; forming a protective layer on the first and second portions of the functionalisation layer; etching the protective layer and the second portion of the functionalisation layer such that a portion of the protective layer is retained and the side walls of the cavity are exposed, the retained portion of the protective layer having a thickness of less than 15 nm; selectively etching the portion of the protective layer relative to the first portion of the functionalisation layer and to the guide pattern; and depositing a block copolymer in the cavity.

Abstract: A method for forming a functionalised guide pattern for the self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern made of a first material having a first chemical affinity for the block copolymer, the guide pattern having a cavity with a bottom and side walls; grafting a functionalisation layer made of a second polymeric material having a second chemical affinity for the block copolymer, the functionalisation layer having a first portion grafted onto the bottom of the cavity and a second portion grafted onto the side walls of the cavity; selectively etching the second portion of the functionalisation layer relative to the first portion of the functionalisation layer, the etching including a step of exposure to an ion beam following a direction that intersects the second portion of the functionalisation layer, such that the ion beam does not reach the first portion of the functionalisation layer.