Abstract: Embodiments herein relate to systems, apparatuses, or processes creating a package that includes a die embedded in a molding, where a surface of the die is coplanar with a surface of the molding. During a stage of package manufacture, the die may have a finished side that may be coupled with a component of the package, and an unfinished side. During a subsequent stage of package manufacture, molding may be placed around the die, and then the molding and at least a portion of the die may be planarized, which may involve grinding and polishing. The planarization may reveal one or more TSV at the side of the die which is now finished and ready for electrical coupling with other components. As a result, a side of the molding at a side of the die to be coplanar. Other embodiments may be described and/or claimed.

Abstract: An integrated circuit (IC) device package substrate comprises a plurality of first interconnect features to couple to a first IC die, a plurality of second interconnect features to couple to a second IC die, and one or more barrier features on a surface of the substrate. The first interconnect features span a first length in a first direction on the surface of the substrate. The second interconnect features span a second length in the first direction on the surface of the substrate. The second interconnect features are between the first length of the first interconnect features and a first edge of the substrate. The one or more barrier features are between the first and second interconnect features, wherein the one or more barrier features span a third length in the first direction, the third length greater than at least one of the first or second lengths.

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an encapsulation layer over the first dies and the substrate, an interface layer over the first dies and the encapsulation layer, and a passive heat spreader on the interface layer, wherein the interface layer thermally couples the first dies to the passive heat spreader. The passive heat spreader includes a silicon (Si) or a silicon carbide (SiC). The interface layer includes a silicon nitride (SiN) material, a silicon monoxide (SiO) material, a silicon carbon nitride (SiCN) material, or a thermal adhesive material. The semiconductor package may include a plurality of second dies and the substrate on a package substrate, a thermal interface material (TIM) over the second dies, the passive heat spreader, and the package substrate, and a heat spreader over the TIM and the package substrate.

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an interface layer over the first dies, a backside metallization (BSM) layer directly on the interface layer, where the BSM layer includes first, second, and third conductive layer, and a heat spreader over the BSM layer. The first conductive layer includes a titanium material. The second conductive layer includes a nickel-vanadium material. The third conductive layer includes a gold material, a silver material, or a copper material. The copper material may include copper bumps. The semiconductor package may include a plurality of second dies on a package substrate. The substrate may be on the package substrate. The second dies may have top surfaces substantially coplanar to top surface of the first dies. The BSM and interface layers may be respectively over the first and second dies.

Abstract: Embodiments disclosed herein include chiplet modules and die modules. In an embodiment, a chiplet module comprises a first chiplet, where the first chiplet comprises a first active surface. In an embodiment the chiplet module further comprises a second chiplet, where the second chiplet comprises a second active surface. In an embodiment, the chiplet module further comprises a hybrid bonding interface between the first chiplet and the second chiplet, where the hybrid bonding interface electrically couples the first chiplet to the second chiplet.

Abstract: A semiconductor package includes a semiconductor subassembly disposed on a package substrate and including: a first layer including first dies, and an encapsulation material encapsulating the first dies; a second layer adjacent the first layer and including a substrate; a solid component disposed on the first layer; and an interface layer disposed between and mechanically bonding the solid component and the first layer. The interface layer provides a direct dielectric-to-dielectric bond including a first dielectric sublayer directly adjacent the first layer, and a second dielectric sublayer directly adjacent the first dielectric sublayer and including an amorphous material. Second dies may be disposed on the package substrate adjacent the semiconductor subassembly.

Abstract: Embodiments described herein include electronic packages. In an embodiment, an electronic package comprises a die and a through substrate via that passes through the die. In an embodiment, the through substrate via is coupled to a backside pad on the die. In an embodiment, a first layer is over the backside pad, where the first layer comprises a first dielectric material. In an embodiment, a second layer is over the first layer, where the second layer comprises a second dielectric material. In an embodiment, a via is through the first layer and the second layer.

Abstract: Technologies for optical coupling to photonic integrated circuit (PIC) dies are disclosed. In the illustrative embodiment, a lens assembly with one or more lenses is positioned to collimate light coming out of one or more waveguides in the PIC die. Part of the illustrative lens assembly extends above a top surface of the PIC die and is in contact with the PIC die. The top surface of the PIC die establishes the vertical positioning of the lens assembly. In the illustrative embodiment, the lens assembly is positioned at least partially inside a cavity defined within the PIC die, which allows the lens assembly to be integrated at the wafer level, before singulation into individual dies.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to multilevel dies, in particular to photonics integrated circuit dies with a thick portion and a thin portion, where the thick portion is placed within a cavity in a substrate and the thin portion serves as an overhang to physically couple with the substrate, to reduce a distance between electrical contacts on the thin portion of the die and electrical contacts on the substrate. Other embodiments may be described and/or claimed.

Abstract: A modular technique for die-level liquid cooling is described. In an example, an integrated circuit assembly includes a first silicon die comprising a device side and a backside opposite the device side. The integrated circuit assembly also includes a second silicon die comprising a plurality of fluidly accessible channels therein. A dielectric interface directly couples the second silicon die to a backside of the first silicon die.

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an interface layer over the first dies, a backside metallization (BSM) layer directly on the interface layer, where the BSM layer includes first, second, and third conductive layer, and a heat spreader over the BSM layer. The first conductive layer includes a titanium material. The second conductive layer includes a nickel-vanadium material. The third conductive layer includes a gold material, a silver material, or a copper material. The copper material may include copper bumps. The semiconductor package may include a plurality of second dies on a package substrate. The substrate may be on the package substrate. The second dies may have top surfaces substantially coplanar to top surface of the first dies. The BSM and interface layers may be respectively over the first and second dies.

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an encapsulation layer over the first dies and the substrate, an interface layer over the first dies and the encapsulation layer, and a passive heat spreader on the interface layer, wherein the interface layer thermally couples the first dies to the passive heat spreader. The passive heat spreader includes a silicon (Si) or a silicon carbide (SiC). The interface layer includes a silicon nitride (SiN) material, a silicon monoxide (SiO) material, a silicon carbon nitride (SiCN) material, or a thermal adhesive material. The semiconductor package may include a plurality of second dies and the substrate on a package substrate, a thermal interface material (TIM) over the second dies, the passive heat spreader, and the package substrate, and a heat spreader over the TIM and the package substrate.

Abstract: Some example forms relate to a method of manufacturing ultra-thin wafers. The method includes attaching a wafer that includes a plurality of electronic components to a carrier wafer that includes an adhesive; segregating the plurality of dice into individual electronic components, wherein segregating the plurality of dice into individual electronic components includes thinning and dicing the wafer; performing at least one of coating, scribing or marking any of the individual electronic components that form the wafer; and removing the plurality of electronic components from the carrier wafer, wherein removing the plurality of electronic components from the carrier wafer includes at least one of exposing the carrier to ultraviolet radiation or raising the temperature of the wafer.

Abstract: Techniques and mechanisms to mitigate contamination of redistribution layer structures disposed on a back side of a semiconductor substrate. In an embodiment, a microelectronics device includes a substrate and integrated circuitry variously formed in or on a front side of the substrate, where vias extend from the integrated circuitry to a back side of the substrate. A redistribution layer disposed on the back side includes a ring structure and a plurality of raised structures each extending from a recess portion that is surrounded by the ring structure. The ring structure and the plurality of raised structures provide contact surfaces for improved adhesion of dicing tape to the back side. In another embodiment, the plurality of raised structures includes dummification comprising dummy structures that are each electrically decoupled from any via extending through the substrate.

Abstract: Techniques and mechanisms to mitigate contamination of redistribution layer structures disposed on a back side of a semiconductor substrate. In an embodiment, a microelectronics device includes a substrate and integrated circuitry variously formed in or on a front side of the substrate, where vias extend from the integrated circuitry to a back side of the substrate. A redistribution layer disposed on the back side includes a ring structure and a plurality of raised structures each extending from a recess portion that is surrounded by the ring structure. The ring structure and the plurality of raised structures provide contact surfaces for improved adhesion of dicing tape to the back side. In another embodiment, the plurality of raised structures includes dummification comprising dummy structures that are each electrically decoupled from any via extending through the substrate.

Abstract: A stiffener tape for a wafer. The stiffener tape includes a mounting tape; a heat spreading stiffener removably attached to the mounting tape; and an attachment film secured to the heat spreading stiffener, wherein the attachment film includes thermal conductive fillers having at least one of silver, alumina, crystalline silica, boron nitride or aluminum nitride. An electronic assembly includes a wafer; a plurality of integrated circuits on the wafer; and an attachment film covering the plurality of integrated circuits and the substrate, wherein the attachment film includes thermal conductive fillers having at least one of silver, alumina, crystalline silica, boron nitride or aluminum nitride; and a heat spreading stiffener secured to the attachment film.

Abstract: A heated non-contact wafer handling gripper may heat a thin device wafer bottom surface having a temporary bonding adhesive residue after debonding of the device wafer from a carrier along a layer of temporary bonding adhesive that bonds the wafers. The gripper may heat residue of the adhesive that remains on the bottom surface while gripping, transferring and placing the wafer onto an adhesive cleaning chuck. The heated adhesive cleaning chuck may heat the thin device wafer bottom surface having the adhesive residue after being placed on the chucks. The chuck may heat the residue of the adhesive while the residue is cleaned from the wafer. Due to the heating by the chuck and/or gripper, wafer warpage and associated problems due to cooling of the residue may be eliminated or acceptable for wafer handling and adhesive cleaning.

Abstract: A heated non-contact wafer handling gripper may heat a thin device wafer bottom surface having a temporary bonding adhesive residue after debonding of the device wafer from a carrier along a layer of temporary bonding adhesive that bonds the wafers. The gripper may heat residue of the adhesive that remains on the bottom surface while gripping, transferring and placing the wafer onto an adhesive cleaning chuck. The heated adhesive cleaning chuck may heat the thin device wafer bottom surface having the adhesive residue after being placed on the chucks. The chuck may heat the residue of the adhesive while the residue is cleaned from the wafer. Due to the heating by the chuck and/or gripper, wafer warpage and associated problems due to cooling of the residue may be eliminated or acceptable for wafer handling and adhesive cleaning.

Abstract: A tape capable of laser ablation may be used in the formation of microelectronic interconnects, wherein the tape may be attached to bond pads on a microelectronic device and vias may be formed by laser ablation through the tape to expose at least a portion of corresponding bond pads. The microelectronic interconnects may be formed on the bond pads within the vias, such as by solder paste printing and solder reflow. The laser ablation tape can be removed after the formation of the microelectronic interconnects.

Abstract: A tape capable of laser ablation may be used in the formation of microelectronic interconnects, wherein the tape may be attached to bond pads on a microelectronic device and vias may be formed by laser ablation through the tape to expose at least a portion of corresponding bond pads. The microelectronic interconnects may be formed on the bond pads within the vias, such as by solder paste printing and solder reflow. The laser ablation tape can be removed after the formation of the microelectronic interconnects.