Abstract: Power amplifier systems including power amplifier modules (PAMs) and electromagnetic bandgap (EBG) isolation structures are disclosed. In embodiments, the power amplifier system includes a printed circuit board (PCB) and a PAM mounted to the PCB in an inverted orientation. The PCB has a PCB frontside on which a PAM mount region is provided, and radio frequency (RF) input and output bondpads. The PAM includes a topside input/output interface having RF input and output terminals electrically coupled to the RF input and output pads, respectively. The power amplifier system further includes a first EBG isolation structure containing a first grounded EBG cell array, at least a portion of which is located within or beneath the PAM mount region.

Abstract: Aspects of the subject disclosure may include a power splitter. The power splitter can include a first splitter branch having a first amplifier with passive components, a second splitter branch having a second amplifier with passive components. The first splitter branch is substantially electrically isolated from the second splitter branch by configuring the first and second splitter branches to have similar phase delays. Outputs of the power splitter can be electrically coupled to the multi-stage amplifier. The power splitter can be manufactured on a single semiconductor die or integrally formed on the same semiconductor die with other circuits such as the multi-stage amplifier. Other embodiments are disclosed.

Abstract: Embodiments of Doherty Power Amplifier (PA) and other PA packages are provided, as are systems including PA packages. In embodiments, the PA package includes a package body having a longitudinal axis, a first group of input-side leads projecting from a first side of the package body and having an intra-group lead spacing, and a first group of output-side leads projecting from a second side of the package body and also having the intra-group lead spacing. A first carrier input lead projects from the first package body side and is spaced from the first group of input-side leads by an input-side isolation gap, which has a width exceeding the intra-group lead spacing. Similarly, a first carrier output lead projects from the second package body side, is laterally aligned with the first carrier input lead, and is separated from the first group of output-side leads by an output-side isolation gap.

Abstract: A multiple-path amplifier (e.g., a Doherty amplifier) includes first and second transistors (e.g., main and peaking transistors) with first and second output terminals, respectively, all of which is integrally-formed with a semiconductor die. A signal path through the second transistor extends in a direction from a control terminal of the second transistor to the second output terminal, where the second output terminal corresponds to or is closely electrically coupled to a combining node. The amplifier also includes an integrated phase delay circuit that is configured to apply an overall phase delay (e.g., 90 degrees) to a signal carried between the first and second output terminals. The integrated phase delay circuit includes delay circuit wirebonds coupled between the first and second output terminals, and the delay circuit wirebonds extend in a third direction that is angularly offset from (e.g., perpendicular to) the second direction.

Abstract: A multiple-path amplifier (e.g., a Doherty amplifier) includes a semiconductor die, a radio frequency (RF) signal input terminal, a combining node structure integrally formed with the semiconductor die, and first and second amplifiers (e.g., main and peaking amplifiers) integrally formed with the die. Inputs of the first and second amplifiers are electrically coupled to the RF signal input terminal. A plurality of wirebonds is connected between an output of the first amplifier and the combining node structure. An output of the second amplifier is electrically coupled to the combining node structure (e.g., through a conductive path with a negligible phase delay). A phase delay between the outputs of the first and second amplifiers is substantially equal to 90 degrees. The second amplifier may be divided into two amplifier portions that are physically located on opposite sides of the first amplifier.

Abstract: Aspects of the subject disclosure may include a power splitter. The power splitter can include a first splitter branch having a first amplifier with passive components, a second splitter branch having a second amplifier with passive components. The first splitter branch is substantially electrically isolated from the second splitter branch by configuring the first and second splitter branches to have similar phase delays. Outputs of the power splitter can be electrically coupled to the multi-stage amplifier. The power splitter can be manufactured on a single semiconductor die or integrally formed on the same semiconductor die with other circuits such as the multi-stage amplifier. Other embodiments are disclosed.

Abstract: A power amplifier includes a semiconductor die, and an amplifier and bias circuit integrally formed with the semiconductor die. The die has opposed first and second sides, and a device bisection line extends between the first and second sides. The bias circuit includes a multi-point input terminal with first and second terminals that are electrically connected through a conductive path that extends across the device bisection line, and one or more bias circuit components connected between the multi-point input terminal and the amplifier. The amplifier may include a field effect transistor (FET) with gate and drain terminals, and the bias circuit component(s) are electrically connected between the multi-point input terminal and the gate terminal. In addition or alternatively, the bias circuit component(s) are electrically connected between a multi-point input terminal and the drain terminal. The one or more components may include a resistor-divider circuit.

Abstract: A multiple-path amplifier (e.g., a Doherty amplifier) includes first and second transistors (e.g., main and peaking transistors) with first and second output terminals, respectively, all of which is integrally-formed with a semiconductor die. A signal path through the second transistor extends in a direction from a control terminal of the second transistor to the second output terminal, where the second output terminal corresponds to or is closely electrically coupled to a combining node. The amplifier also includes an integrated phase delay circuit that is configured to apply an overall phase delay (e.g., 90 degrees) to a signal carried between the first and second output terminals. The integrated phase delay circuit includes delay circuit wirebonds coupled between the first and second output terminals, and the delay circuit wirebonds extend in a third direction that is angularly offset from (e.g., perpendicular to) the second direction.

Abstract: The embodiments described herein can provide radio frequency (RF) amplifiers, and particularly Doherty power amplifiers. The Doherty amplifiers include a carrier amplifier, at least one peaking amplifier, and a combiner. In general, these Doherty amplifiers include an adaptive impedance transformation that provides a phase shift and modifies the impedance presented to one or more peaking amplifier(s) in the Doherty amplifier. Specifically, the combiner includes at least a first impedance transformer, second impedance transformer, and a third impedance transformer coupled between the first impedance transformer and the second impedance transformer. In accordance with the embodiments described herein, the third impedance transformer is configured to both provide both a phase shift and an impedance transformation.

Abstract: Embodiments of Doherty Power Amplifier (PA) and other PA packages are provided, as are systems including PA packages. In embodiments, the PA package includes a package body having a longitudinal axis, a first group of input-side leads projecting from a first side of the package body and having an intra-group lead spacing, and a first group of output-side leads projecting from a second side of the package body and also having the intra-group lead spacing. A first carrier input lead projects from the first package body side and is spaced from the first group of input-side leads by an input-side isolation gap, which has a width exceeding the intra-group lead spacing. Similarly, a first carrier output lead projects from the second package body side, is laterally aligned with the first carrier input lead, and is separated from the first group of output-side leads by an output-side isolation gap.

Abstract: A power amplifier includes a semiconductor die, and an amplifier and bias circuit integrally formed with the semiconductor die. The die has opposed first and second sides, and a device bisection line extends between the first and second sides. The bias circuit includes a multi-point input terminal with first and second terminals that are electrically connected through a conductive path that extends across the device bisection line, and one or more bias circuit components connected between the multi-point input terminal and the amplifier. The amplifier may include a field effect transistor (FET) with gate and drain terminals, and the bias circuit component(s) are electrically connected between the multi-point input terminal and the gate terminal. In addition or alternatively, the bias circuit component(s) are electrically connected between a multi-point input terminal and the drain terminal. The one or more components may include a resistor-divider circuit.

Abstract: A multiple-path amplifier (e.g., a Doherty amplifier) includes a semiconductor die, a radio frequency (RF) signal input terminal, a combining node structure integrally formed with the semiconductor die, and first and second amplifiers (e.g., main and peaking amplifiers) integrally formed with the die. Inputs of the first and second amplifiers are electrically coupled to the RF signal input terminal. A plurality of wirebonds is connected between an output of the first amplifier and the combining node structure. An output of the second amplifier is electrically coupled to the combining node structure (e.g., through a conductive path with a negligible phase delay). A phase delay between the outputs of the first and second amplifiers is substantially equal to 90 degrees. The second amplifier may be divided into two amplifier portions that are physically located on opposite sides of the first amplifier.

Abstract: A method for producing a load introducing element for a control surface of an aircraft or a spacecraft, includes cutting to size preformed fibrous substructures out of a fibrous material. The method also includes draping the fibrous substructures to mold at least one first component, at least one second component and at least one first flange in the form of a single semi-finished product. Further, the method includes inserting the semi-finished product into a mold, injecting matrix material, and curing the semi-finished product to form a finished product.

Abstract: A high lift system for an aircraft includes a basic body, a flap which is movably mounted on the basic body and has a flap edge, and a retaining element. The high lift system is set up to form a gap between the flap edge and the basic body. The retaining element is mounted on a region of the flap close to the flap edge and extends towards the basic body to restrict the distance between the flap edge and the basic body. The retaining element is preferably configured as a linear attachment means. Consequently, a gap dimension between a flap and a basic body can be influenced to restrict flexing effects during loading of the flap and of the basic body.

Abstract: A high lift component includes at least one intermediate seal on at least one lateral surface, wherein the intermediate seal includes at least one hollow body made of an elastic material, which hollow body includes a fluid inlet that is connectable to a fluid source. A gap between two high lift components, which gap is subjected to dynamic changes in geometry, can be flexibly sealed in this manner.

Abstract: A leading edge slat arranged on the aerofoil of an aircraft. The leading edge slat is provided on the front of the main wing. The leading edge slat has a partially extended setting, with its trailing edge flat against the wing, and a further extended setting, with its trailing edge spaced apart from the nose of the wing to open a gap feeding high- energy air from the lower surface of the slat to the upper surface of the wing. The leading edge slat includes a body and a trailing edge facing the main wing, which can be bent around the spanwise direction of the slat relative to the body, and on which the trailing edge of the slat is provided, and which by means of a device generating a contact force is loaded for making contact between the trailing edge of the slat and the profile nose of the wing.

Abstract: A leading edge slat arranged on the aerofoil of an aircraft. The leading edge slat is provided on the front of the main wing. The leading edge slat has a partially extended setting, with its trailing edge flat against the wing, and a further extended setting, with its trailing edge spaced apart from the nose of the wing to open a gap feeding high-energy air from the lower surface of the slat to the upper surface of the wing. The leading edge slat includes a body and a trailing edge facing the main wing, which can be bent around the spanwise direction of the slat relative to the body, and on which the trailing edge of the slat is provided, and which by means of a device generating a contact force is loaded for making contact between the trailing edge of the slat and the profile nose of the wing.

Abstract: An aircraft wing has a main wing element with a spar and a leading edge rib supported by the spar, a high lift device movably mounted to the main wing element, and an actuation mechanism with a drive shaft and a gear train. The gear train has a drive cog carried by the drive shaft, an actuator cog coupled to the high lift device, and one or more intermediate cogs mounted to the rib and coupled in series with the drive cog and the actuator cog so as to transmit torque from the drive cog to the actuator cog which moves the high lift device between a retracted position and an extended position in which the high lift device increases the camber of the wing. Sizes of the cogs in the gear train are selected so that the drive shaft rotates at a higher rate than the high lift device.

Abstract: The invention relates to a wing with an extension in the wingspan direction, in the wing chord direction and in the wing thickness direction for use in an aircraft, with a retractable wing end piece. A mechanical lever system is here used, which can execute a pivoting motion of a wing end piece comprising both a rotational component and a translational component. The lever kinematics here comprises two lever arrangements, for which a respective two hinged devices are provided.

Abstract: A flow body includes a flow body base body with a first shell element, a leading flow body edge with a second shell element and a clamping body, and a receiving space partially delimited by the clamping body. The flow body base body includes on a front end a projection, having a shape corresponding to that of the receiving space for engaging into the receiving space. The clamping body is internally arranged on the leading flow body edge spaced apart from a rear end of the second shell element. The rear end of the second shell element is flushly positioned on the first shell element when the projection engages into the receiving space. A smooth and harmonious transition that does not influence a laminar flow around the flow body can be achieved between the two components.