Patents by Inventor Xavier Lecoq

Xavier Lecoq has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250104747
    Abstract: A non-volatile memory includes a first area with first storage elements configured to store values associated with first neurons of a network and a second area with second storage elements. A control circuit applies one or more first input values to first read paths, each first read path including one among the first storage elements. A computing circuit adds currents supplied by the first read paths to generate an output current. A programming circuit converts the output current into a programming current, and uses the programming current to program a second storage element.
    Type: Application
    Filed: September 16, 2024
    Publication date: March 27, 2025
    Applicant: STMicroelectronics International N.V.
    Inventors: Alin RAZAFINDRAIBE, Thomas JOUANNEAU, Xavier LECOQ
  • Publication number: 20240386954
    Abstract: A multi-level non-volatile memory cell has N levels, N being even and greater than two, corresponding respectively to N logical data that can be stored in the memory cell and to N corresponding read current ranges. A datum stored in the memory cell is read by performing successive comparisons of a read current output by the memory cell with reference currents selected from a set of N-1 reference currents having values respectively lying between two different successive ranges using a dichotomous algorithm starting with the reference current having the median value.
    Type: Application
    Filed: May 10, 2024
    Publication date: November 21, 2024
    Applicant: STMicroelectronics International N.V.
    Inventors: Xavier LECOQ, Alin RAZAFINDRAIBE
  • Publication number: 20240386955
    Abstract: A phase-change memory cell to be read is associated with a phase-change reference memory cell placed in a SET state. The reference memory cell has a structure that is identical to that of the memory cell. A first voltage is applied to the memory cell to cause output of a first current. A second voltage is applied to the reference memory cell to cause output of a second current. A sense amplifier is coupled to the memory cell and to the reference memory cell and is configured to compare respective values of the first current and of the second current and generate output information representative of the logic value of the datum stored by the memory cell.
    Type: Application
    Filed: May 10, 2024
    Publication date: November 21, 2024
    Applicant: STMicroelectronics International N.V.
    Inventors: Xavier LECOQ, Alin RAZAFINDRAIBE, Christophe FOREL
  • Patent number: 12148503
    Abstract: In an embodiment an integrated circuit includes a non-volatile memory having a plurality of memory cells, wherein each memory cell is configured to store information, and wherein each memory cell is configured to provide a reading current having an intensity dependent on a value stored in the memory cell when the memory cell is selected for reading; and a sense amplifier including a first amplifier configured to amplify the reading current of each memory cell selected for reading, an oscillation generator configured to generate on basis of the amplified signal a signal having oscillations according to a frequency dependent on the intensity of the current of the amplified signal, a counter configured to count the oscillations of the signal generated by the oscillation generator over at least one given period of time and a digital processing circuit configured to determine a value represented by the amplified signal on basis of the value counted during the at least one given period of time using a lookup table
    Type: Grant
    Filed: September 16, 2022
    Date of Patent: November 19, 2024
    Assignee: STMICROELECTRONICS (GRAND OUEST) SAS
    Inventor: Xavier Lecoq
  • Publication number: 20240290364
    Abstract: A device includes memory cells wherein each memory cell has a control input that receives a pulse-width modulated control voltage and an output that delivers a current depending on the control voltage and on a weight programmed in the memory cell. A node receives, during a first time period, the currents of the memory cells. A first circuit delivers an output determined by a total quantity of current received by the node during the first time period. For each memory cell, a second circuit receives a digital word and delivers, during the first time period, the pulse-width modulated control voltage at a first level only during a second time period determined by the digital word.
    Type: Application
    Filed: February 14, 2024
    Publication date: August 29, 2024
    Applicant: STMicroelectronics International N.V.
    Inventors: Leonardo VALENCIA RISSETTO, Alin RAZAFINDRAIBE, Xavier LECOQ, Christophe FOREL
  • Publication number: 20230100872
    Abstract: In an embodiment an integrated circuit includes a non-volatile memory having a plurality of memory cells, wherein each memory cell is configured to store information, and wherein each memory cell is configured to provide a reading current having an intensity dependent on a value stored in the memory cell when the memory cell is selected for reading; and a sense amplifier including a first amplifier configured to amplify the reading current of each memory cell selected for reading, an oscillation generator configured to generate on basis of the amplified signal a signal having oscillations according to a frequency dependent on the intensity of the current of the amplified signal, a counter configured to count the oscillations of the signal generated by the oscillation generator over at least one given period of time and a digital processing circuit configured to determine a value represented by the amplified signal on basis of the value counted during the at least one given period of time using a lookup table
    Type: Application
    Filed: September 16, 2022
    Publication date: March 30, 2023
    Inventor: Xavier Lecoq