Patents by Inventor Xavier Marcadet

Xavier Marcadet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8610171
    Abstract: A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: December 17, 2013
    Assignee: Thales
    Inventors: Philippe Bois, Olivier Parillaud, Xavier Marcadet, Michel Papuchon
  • Patent number: 8359904
    Abstract: A photoacoustic detection device including a nanophotonic circuit including a plurality of semiconductor lasers capable of emitting a different frequencies; input couplers connected to optical waveguides; a multiplexer; an output optical waveguide, emerging into a recess; a tuning fork having its free arms arranged at the output of the output optical waveguide; and means for detecting the vibration of the tuning fork, all these elements being assembled in a monolithic component.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: January 29, 2013
    Assignees: Commissariat a l'Energie Atomique et aux Energies Albernatives, Thales
    Inventors: Sergio Nicoletti, Philippe Andreucci, Mickaël Brun, Serge Gidon, Xavier Marcadet, Mathieu Carras
  • Publication number: 20110248316
    Abstract: A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.
    Type: Application
    Filed: December 8, 2009
    Publication date: October 13, 2011
    Applicant: THALES
    Inventors: Philippe Bois, Olivier Parillaud, Xavier Marcadet, Michel Papuchon
  • Publication number: 20110088453
    Abstract: A photoacoustic detection device including a nanophotonic circuit including a plurality of semiconductor lasers capable of emitting a different frequencies; input couplers connected to optical waveguides; a multiplexer; an output optical waveguide, emerging into a recess; a tuning fork having its free arms arranged at the output of the output optical waveguide; and means for detecting the vibration of the tuning fork, all these elements being assembled in a monolithic component.
    Type: Application
    Filed: October 21, 2010
    Publication date: April 21, 2011
    Applicant: Commissariat A L'Energie Atomique et Aux Energies Alternatives
    Inventors: Sergio NICOLETTI, Philippe Andreucci, Mickaël Brun, Serge Gidon, Xavier Marcadet, Mathieu Carras