Abstract: The timepiece assembly includes a first timepiece component (10) assembled with a distinct second timepiece component (20), the first timepiece component (10) having at least one functional part and a receiving opening (11) which can constitute a connecting hole distinct from the functional part, the wall delimiting the receiving opening (11) forming a first connecting surface (12), the second timepiece component (20) having a second connecting surface (22) and being assembled securely with the first timepiece component by direct or indirect contact between the respective first and second connecting surfaces (12, 22) at a securing surface, wherein at least one of the first and second connecting surfaces (12, 22) or a third connecting surface of an optional intermediate third component (30) is made of silicon oxidized by heat treatment so that the first and second timepiece components are secured to one another by the growth of an oxidized silicon layer

Abstract: The method for manufacturing a mold for manufacturing a timepiece component includes producing (E1) a recess originating from an upper surface (21) of a substrate (20), so as to form a recess (30) delimited by at least one surface (31) inclined relative to the plane (P1) in which the upper surface (21) of the substrate (20) extends, and producing (E3) at least one wall (41) of the mold comprising depositing (E31) a material on at least part of the surfaces of the substrate (20), optionally covered with a conductive layer and/or an anti-reflective layer (25), so as to form a mold at least partially delimited by at least one wall (41) of the material and by the at least one inclined surface (31) of the recess (30), and optionally by at least part of the upper surface (21) of the substrate (20).

Abstract: The method for manufacturing a timepiece component includes: providing (E1) a substrate having an upper surface (21); applying (E2) an anti-glare treatment to all or part of the upper surface (21) of the substrate (20); depositing (E31) a layer of photoresist (40) on the upper surface of the substrate (20); exposing (E32) the photoresist (40) to exposure radiation (45) according to a predetermined pattern; and developing (E33) the photoresist (40), so as to form a mould delimited at least partially by the photoresist (40) and by a portion of the at least one upper surface (21) of the substrate (20).

Abstract: Method for manufacturing a horology component, including manufacturing (E1) a first structure (10) from a first photosensitive resin (31) having at least one layer of photosensitive resin having a first pattern obtained by polymerizing the first photosensitive resin by irradiation through at least one mask (4), then developing the first photosensitive resin; and transforming (E2) the first structure (10) into a second structure (1) by structuring at least one surface of the first structure by the addition of a second photosensitive resin (32) to the at least one surface, the second structure (1) being intended to at least partially form a manufacturing mold for the horology component.

Abstract: Method for manufacturing a master pattern for a mold for a horology component, wherein the method includes manufacturing a first structure from a first photosensitive resin comprising at least one layer of photosensitive resin comprising a first pattern obtained by polymerizing the first photosensitive resin by irradiation through at least one mask, then developing the first photosensitive resin; and transforming the first structure into a second structure by structuring at least one surface of the first structure by the addition of a second photosensitive resin to the at least one surface.

Abstract: Provided is a method for protecting a complex watch component against gaseous environment, characterized in that the entire surface of the complex watch component or parts of said surface is/are coated with a protective coating, which is not visible by observation with the naked eye, by atomic layer deposition (ALD). Further provided are a method for obtaining a complex watch component, and a complex watch component comprising a protective ALD coating.

Abstract: Method for manufacturing by photolithography a resin multilayer mould (10; 10?) including a cavity (11; 11?) provided with an inlet (110; 110?) for the manufacture of a horological component, including producing at least two resin layers of the mould (10; 10?), by producing a first resin layer (C10; C20?) having a first through-opening or open opening (111; 111?) oriented in the direction of the inlet (110; 110?) of the mould to delimit a first volume of the cavity (11; 11?) of the mould (10, 10?), and producing a second resin layer (C20; C30?) including a rigid film and having a second through-opening (112; 112?) that delimits a second volume of the cavity (11; 11?) of the mould (10, 10?) and is at least partly superposed on the first through-opening or open opening (111; 111?), the second resin layer partly covering that same first through-opening or open opening (111; 111?).

Abstract: Method for manufacturing a horology component, including manufacturing (E1) a first structure (10) from a first photosensitive resin (31) having at least one layer of photosensitive resin having a first pattern obtained by polymerizing the first photosensitive resin by irradiation through at least one mask (4), then developing the first photosensitive resin; and transforming (E2) the first structure (10) into a second structure (1) by structuring at least one surface of the first structure by the addition of a second photosensitive resin (32) to the at least one surface, the second structure (1) being intended to at least partially form a manufacturing mold for the horology component.

Abstract: Method for manufacturing a master pattern for a mold for a horology component, wherein the method includes manufacturing a first structure from a first photosensitive resin comprising at least one layer of photosensitive resin comprising a first pattern obtained by polymerizing the first photosensitive resin by irradiation through at least one mask, then developing the first photosensitive resin; and transforming the first structure into a second structure by structuring at least one surface of the first structure by the addition of a second photosensitive resin to the at least one surface.

Abstract: Provided is a method for protecting a complex watch component against gaseous environment, characterized in that the entire surface of the complex watch component or parts of said surface is/are coated with a protective coating, which is not visible by observation with the naked eye, by atomic layer deposition (ALD). Further provided are a method for obtaining a complex watch component, and a complex watch component comprising a protective ALD coating.

Abstract: A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Abstract: Solar devices with high resistance to light-induced degradation are described. A wide optical bandgap interface layer positioned between a p-doped semiconductor layer and an intrinsic semiconductor layer is made resistant to light-induced degradation through treatment with a hydrogen-containing plasma. In one embodiment, a p-i-n structure is formed with the interface layer at the p/i interface. Optionally, an additional interface layer treated with a hydrogen-containing plasma is formed between the intrinsic layer and the n-doped layer. Alternatively, a hydrogen-containing plasma is used to treat an upper portion of the intrinsic layer prior to deposition of the n-doped semiconductor layer. The interface layer is also applicable to-multi-junction solar cells with plural p-i-n structures. The p-doped and n-doped layers can optionally include sublayers of different compositions and different morphologies (e.g., microcrystalline or amorphous).

Abstract: A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Abstract: A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Abstract: A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.