Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

Abstract: The invention relates to a product resulting from the grafting, by esterification or transesterification, onto at least a part of the hydroxyl functions of an ulvan-type polysaccharide in the form of an acid or in the form of a mono- or divalent salt, in particular a sodium salt, of fatty chains or of mixtures of fatty chains containing 8 to 28 carbon atoms, said fatty chains being saturated or unsaturated, and linear or branched. It also relates to the method for preparing this product. It also relates to uses of this product, in particular as surfactant.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

Abstract: A compact single-propellant unitary propulsion system for placing a satellite into an orbit and subsequently correcting the orbit so that the satellite is stabilized on three axes comprises a liquid propellant tank secured to a satellite platform and having a reinforced bottom wall with an outlet and filter element, a distribution block welded to the reinforced bottom wall, at least one filling/emptying value mounted on the distribution block, and a set of at least two thrusters mounted on the distribution block and fed directly from the distribution block without additional pipework. The set of at least two thrusters point substantially along the axis of the tank, which is aligned with the axis of the satellite. The propulsion system may be fully assembled before it is integrated with the satellite.

Abstract: A process for preparation of a fat fraction of vegetable origin enriched with unsaponifiable materials. A fat of vegetable origin is treated with a hot polar solvent of the ketone type to obtain a first fraction insoluble in the hot ketone solvent which is rich in unsaponifiable materials, and a second fraction which is a solution of hot soluble materials. The first fraction is then separated from the second fraction, and the second fraction is subjected to a crystallization in a crystallization solvent at a temperature below 0.degree. C., followed by filtering to obtain a filtrate. The crystallization solvent is then evaporated from the filtrate to obtain a further fraction rich and unsaponifiable materials.