Patents by Inventor Xavier Schneider

Xavier Schneider has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9875914
    Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: January 23, 2018
    Assignee: Soitec
    Inventors: Didier Landru, Oleg Kononchuk, Christophe Gourdel, Carole David, Sebastien Mougel, Xavier Schneider
  • Patent number: 9799549
    Abstract: The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: October 24, 2017
    Assignee: Soitec
    Inventors: Sebastien Kerdiles, Guillaume Chabanne, Francois Boedt, Aurelia Pierret, Xavier Schneider, Didier Landru
  • Publication number: 20160372342
    Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving the plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in the oxide of the dielectric diffuses through the active layer reacts with the semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.
    Type: Application
    Filed: June 11, 2014
    Publication date: December 22, 2016
    Inventors: Didier Landru, Oleg Kononchuk, Christophe Gourdel, Carole David, Sebastien Mougel, Xavier Schneider