Abstract: A method for manufacturing an integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step.

Abstract: An integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step

Abstract: A light shield apparatus and formation method for preventing the transmission of incident light towards active devices of the display. In one embodiment, the present invention recites forming a plurality of metal pixels wherein adjacent ones of the plurality of metal pixels have a gap region disposed therebetween. The present embodiment then recites depositing a light absorbing antireflective coating material within the gap region to form a light shield such that transmission of incident light through the gap region towards underlying active devices is reduced. Hence, the present embodiments also reduce problems associated with Liquid Crystal alignment difficulty and passivation integrity (cracking of thin passivation). Next, the present embodiment deposits a thin composite passivation layer above the plurality of metal pixels and the antireflective coating material.

Abstract: A light shield apparatus and formation method for preventing the transmission of incident light towards active devices of the display. In one embodiment, the present invention recites forming a plurality of metal pixels wherein adjacent ones of the plurality of metal pixels have a gap region disposed therebetween. The present embodiment then recites depositing a light absorbing antireflective coating material within the gap region to form a light shield such that transmission of incident light through the gap region towards underlying active devices is reduced. Hence, the present embodiments also reduce problems associated with Liquid Crystal alignment difficulty and passivation integrity (cracking of thin passivation). Next, the present embodiment deposits a thin composite passivation layer above the plurality of metal pixels and the antireflective coating material.

Abstract: A light shield apparatus and formation method for preventing the transmission of incident light towards active devices of the display. In one embodiment, the present invention recites patterning a second metal layer to form a plurality of second metal structures. The present embodiment also recites depositing an intermetal dielectric layer above the plurality of second metal structures. Subsequently, the present embodiment deposits a light absorbing antireflective coating material above the intermetal dielectric layer to form a light shield followed by another planarized IMD layer such that transmission of incident light towards underlying active devices is reduced. The present embodiment also performs the step of forming a plurality of metal pixels above the antireflective coating material wherein adjacent ones of the plurality of metal pixels have a gap region disposed therebetween.

Abstract: A new method of forming a robust titanium nitride barrier layer by PVD is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A via is opened through the insulating layer to one of the underlying semiconductor device structures. A titanium nitride barrier layer having a discontinuous grain structure is deposited within the via wherein the titanium nitride barrier layer comprises alternating layers of titanium nitride and titanium containing a trace of nitrogen. A metal layer is deposited overlying the titanium nitride barrier layer wherein the discontinuous grain structure of the titanium nitride barrier layer prevents diffusion from the metal layer into the insulating layer to complete formation of a robust titanium nitride barrier layer in the fabrication of an integrated circuit device.