Abstract: A microbolometer may include a sensitive material based on vanadium oxide (VOx) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 ?·cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

Abstract: An infrared radiation detector includes an array of elementary imaging bolometric detectors, each of the elementary bolometric detectors being formed of a bolometric membrane including a film made of vanadium oxide VOx, having a resistivity in the range from 6 ohm·cm to 50 ohm·cm, said membrane being suspended above a substrate integrating a signal for reading out the signal generated by said elementary detectors and for sequentially addressing the elementary detectors.

Abstract: A microbolometer may include a sensitive material based on vanadium oxide (VOx) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 ?·cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

Abstract: The invention relates to a process for manufacturing a microbolometer (10) comprising a sensitive material (15) based on vanadium oxide (VOx) comprising an additional chemical element chosen from among boron (B), carbon (C), with the exception of nitrogen (N), comprising the following steps: i. determining a non-zero effective amount of the additional chemical element (B, C) starting from which the sensitive material (15), having undergone exposure to a temperature Tr for a duration ?tr, has an electrical resistivity ?a|r at ambient temperature greater than or equal to 50% of the native value ?a of said sensitive material (15); ii. producing the sensitive material (15) in a thin layer having an amount of the additional chemical element (B, C) greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 ?·cm; iii.

Abstract: A process for manufacturing at least one microbolometer comprising a sensitive material based on vanadium oxide containing nitrogen as additional chemical element, includes steps of determining a non-zero effective amount of the additional chemical element starting from which the sensitive material, having undergone a step of exposure to a temperature Tr for a duration ?tr, has an electrical resistivity ?a|r at ambient temperature greater than or equal to 50% of the native value ?a of said sensitive material at ambient temperature; producing the sensitive material in a thin layer having an amount of the additional chemical element greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 ?·cm; and exposing the sensitive material to a temperature Tr for a duration ?tr.

Abstract: The invention relates to a process for manufacturing a microbolometer (10) comprising a sensitive material (15) based on vanadium oxide (VOx) comprising an additional chemical element chosen from among boron (B), carbon (C), with the exception of nitrogen (N), comprising the following steps: i. determining a non-zero effective amount of the additional chemical element (B, C) starting from which the sensitive material (15), having undergone exposure to a temperature Tr for a duration ?tr, has an electrical resistivity ?a|r at ambient temperature greater than or equal to 50% of the native value ?a of said sensitive material (15); ii. producing the sensitive material (15) in a thin layer having an amount of the additional chemical element (B, C) greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 ?.cm; iii.

Abstract: A process for manufacturing at least one microbolometer comprising a sensitive material based on vanadium oxide containing nitrogen as additional chemical element, includes steps of determining a non-zero effective amount of the additional chemical element starting from which the sensitive material, having undergone a step of exposure to a temperature Tr for a duration ?tr, has an electrical resistivity ?a|r at ambient temperature greater than or equal to 50% of the native value ?a of said sensitive material at ambient temperature; producing the sensitive material in a thin layer having an amount of the additional chemical element greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 ?·cm; and exposing the sensitive material to a temperature Tr for a duration ?tr.

Abstract: An infrared radiation detector includes an array of elementary imaging bolometric detectors, each of the elementary bolometric detectors being formed of a bolometric membrane including a film made of vanadium oxide VOx, having a resistivity in the range from 6 ohm·cm to 50 ohm·cm, said membrane being suspended above a substrate integrating a signal for reading out the signal generated by said elementary detectors and for sequentially addressing the elementary detectors.

Abstract: The invention relates to a method for producing a spinel iron oxide layer. textured according to a preferred crystal orientation along the [111] direction, with the spinel iron oxide layer being a ferrite layer or a doped ferrite layer, characterised in that it comprises: producing a bottom layer of titanium (Ti) or titanium oxide (TiOx), with the thickness of the bottom layer being greater than or equal to eight nanometres; producing a spinel iron oxide layer on the bottom layer produced beforehand. It also relates to a device comprising a layer of textured ferrite.