Abstract: Methods of depositing molybdenum (Mo) are disclosed. The methods include depositing molybdenum (Mo) on a substrate including a top surface and at least one feature including a sidewall surface and a bottom surface.

Abstract: A bottom cover plate that enables control of radiative heat transfer associated with a heating element inside a chamber for processing a substrate is provided. The bottom cover plate includes a plate body having a central opening configured to be disposed on a shaft of a pedestal of a substrate processing system. The plate body includes a facing surface configured to face a substrate disposed on a substrate support of the pedestal. The bottom cover plate further includes one or more removable emissivity-modifying modules disposed on the facing surface, wherein the one or more removable emissivity-modifying modules define regions having different emissivity. In some embodiments, the plate body includes a plurality of pinholes configured to receive one or more pins for removably retaining the one or more removable emissivity-modifying modules at selected locations on the facing surface.

Abstract: An embodiment of a method includes (a) cleaning one or more interior surfaces of a substrate processing chamber. In addition, the method includes (b) depositing a coating on the one or more interior surfaces by use of a plasma-enhanced vapor deposition (PECVD) process after (a) to reduce peeling of residue that is subsequently deposited on the coating.

Abstract: A method of forming a metal silicide layer in a semiconductor structure includes performing a silicide deposition process in a processing chamber, in which a metal silicide layer is selectively formed on silicon surfaces within an opening formed in a semiconductor structure, inner surfaces of the opening comprising the silicon surfaces and dielectric surfaces, the silicide deposition process including diverting a metal-containing precursor from a gas source to a vacuum pump coupled to the processing chamber for a first time duration, and subsequent to the first time duration, delivering the metal-containing precursor from the gas source to the processing chamber.

Abstract: A method of filling a via having a necking point includes performing a pre-clean process to remove residues from an exposed surface of a metal layer at a bottom of a via and recover inner surfaces of the via, wherein the via is formed within a dielectric layer and has a necking point protruding within the via, performing a selective deposition process to partially fill the via with metal fill material from the exposed surface of the metal layer below the necking point, performing a liner deposition process to form a liner layer on exposed inner surfaces of the via, and performing a metal fill process to fill the via with the metal fill material.

Abstract: A method of forming a structure on a substrate that includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer to a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow points within the at least one opening. The method includes exposing the at least one opening of the substrate to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening to a molybdenum-containing gas to remove a tungsten nitride layer from the tungsten fill layer.

Abstract: A method of forming a metal silicide layer in a semiconductor structure includes performing a silicide deposition process in a processing chamber, in which a metal silicide layer is formed on silicon surfaces within an opening formed in a semiconductor structure, inner surfaces of the opening comprising the silicon surfaces, wherein the silicide deposition process including performing a pre-dose purging process, in which the processing chamber is evacuated at a first pressure, performing a dose process, in which a metal-containing precursor is flowed in the processing chamber at a second pressure that is higher than the first pressure, performing a post-dose purge process, in which the processing chamber is purged at a third pressure that is lower than the second pressure, and performing an anneal process at a fourth pressure that is higher than the second pressure.

Abstract: A method of filling a feature in a semiconductor structure with metal includes depositing a metal cap layer on a bottom surface of a feature formed within a dielectric layer and top surfaces of the dielectric layer, partially filling the feature from the bottom surface with a flowable polymer layer, performing a metal pullback process to remove the metal cap layer on the top surfaces of the dielectric layer selectively to the dielectric layer, wherein the metal pullback process includes a first etch process including a chemical etch process using molybdenum hexafluoride (MoF6) to remove the metal cap layer selectively to the dielectric layer, and a second etch process to remove residues on etched surfaces of the dielectric layer, removing the flowable polymer layer, pre-cleaning a surface of the metal cap layer, and filling the feature from the surface of the metal cap layer with metal fill material.

Abstract: A method of forming and post-treating a metal silicide layer in a semiconductor structure includes performing a silicide deposition process, in which a metal silicide layer is deposited on a substrate, performing a chemical vapor deposition (CVD) soak process in which the metal silicide layer is exposed to a nitrogen (N)-containing liquid precursor, forming a metal silicide nitride layer, and performing a cap deposition process, in which a cap layer is deposited on the metal silicide nitride layer.

Abstract: Methods used in electronic device manufacturing and, more particularly, to methods used for forming metal containing interconnect features in a semiconductor device. In one aspect, a method of forming a boron nitride layer on a metal surface is provided. The method includes exposing a surface of a metal layer to a nitrogen-containing plasma to form a metal nitride layer on the surface. The method further includes performing a chemical vapor deposition (CVD) soak process in which the metal nitride layer is exposed to a boron (B)-containing precursor gas, form a boron nitride monolayer.

Abstract: A method of filling a via having a necking point includes executing one or more cycles, each cycle including performing a pre-clean process to remove metal oxides from an exposed surface of a metal layer at a bottom of the via and recover inner surfaces of the via, wherein the via is formed within a dielectric layer and has the necking point protruding within the via, performing a selective deposition process to selectively deposit metal fill material on the exposed surface of the metal layer below the necking point, and performing a selectivity recovery process to oxidize by-products from the selective deposition process, and performing a full bottom fill process to fill a remainder of the via with the metal fill material.

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Abstract: The disclosure generally includes a heat reflection assembly for improved deposition uniformity in semiconductor manufacturing. In one embodiment, a heat reflection assembly for semiconductor manufacturing is provided. The heat reflection assembly includes a reflector plate and a first tuning element. The reflector plate includes a first surface having a first region with a first emissivity. The first tuning element is disposed on the first surface of the reflector plate. The first tuning element includes a reflecting surface having a second emissivity different than the first emissivity.

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

Abstract: A method of filling a feature in a semiconductor structure with metal includes depositing a metal cap layer on a bottom surface of a feature formed within a dielectric layer and top surfaces of the dielectric layer, partially filling the feature from the bottom surface with a flowable polymer layer, performing a metal pullback process to remove the metal cap layer on the top surfaces of the dielectric layer selectively to the dielectric layer, wherein the metal pullback process includes a first etch process including a chemical etch process using molybdenum hexafluoride (MoF6) to remove the metal cap layer selectively to the dielectric layer, and a second etch process to remove residues on etched surfaces of the dielectric layer, removing the flowable polymer layer, pre-cleaning a surface of the metal cap layer, and filling the feature from the surface of the metal cap layer with metal fill material.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: A method of filling a via having a necking point includes performing a pre-clean process to remove residues from an exposed surface of a metal layer at a bottom of a via and recover inner surfaces of the via, wherein the via is formed within a dielectric layer and has a necking point protruding within the via, performing a selective deposition process to partially fill the via with metal fill material from the exposed surface of the metal layer below the necking point, performing a liner deposition process to form a liner layer on exposed inner surfaces of the via, and performing a metal fill process to fill the via with the metal fill material.