Patents by Inventor Xi CEN
Xi CEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240047268Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.Type: ApplicationFiled: July 17, 2023Publication date: February 8, 2024Applicant: Applied Materials, Inc.Inventors: Peiqi WANG, Xi CEN, Dixiong WANG, Mingrui ZHAO, Yang LI, Kai WU
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Publication number: 20240014072Abstract: A method of forming a semiconductor device structure includes forming a nucleation layer within at least one feature. The method includes exposing the nucleation layer to a nitrogen plasma treatment. The nitrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal growth.Type: ApplicationFiled: June 21, 2023Publication date: January 11, 2024Inventors: Tsung-Han YANG, Zhimin QI, Yongqian GAO, Rongjun WANG, Yi XU, Yu LEI, Xingyao GAO, Chih-Hsun HSU, Xi CEN, Wei LEI, Shiyu YUE, Aixi ZHANG, Kai WU, Xianmin TANG
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Patent number: 11859277Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.Type: GrantFiled: May 21, 2021Date of Patent: January 2, 2024Assignee: Applied Materials, Inc.Inventors: Xi Cen, Kai Wu, Seshadri Ganguli, Xinming Zhang, Norman L. Tam, Abhilash Mayur
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Patent number: 11798845Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: GrantFiled: October 28, 2020Date of Patent: October 24, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Kai Wu, Min Heon, Wei Min Chan, Tom Ho Wing Yu, Peiqi Wang, Ju Ik Kang, Feihu Wang, Nobuyuki Sasaki, Chunming Zhou
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Publication number: 20230317458Abstract: A method of forming an interconnect structure over a substrate includes forming a nucleation layer over a surface of the substrate. The surface of the substrate comprises a plurality of openings, and the process of forming the nucleation layer includes (a) exposing the substrate to a tungsten-containing precursor gas to form a tungsten-containing layer over a surface of each of the plurality of openings, (b) exposing the formed tungsten-containing layer to an etchant gas, wherein exposing the tungsten-containing layer to the etchant gas etches at least a portion of the tungsten-containing layer disposed at a top region of each of the plurality of openings, and repeating (a) and (b) one or more times. The method further includes forming a bulk layer over the formed nucleation layer.Type: ApplicationFiled: August 12, 2022Publication date: October 5, 2023Inventors: Kai WU, Xi CEN, Dixiong WANG, Yang LI, Peiqi WANG
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Patent number: 11776806Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: GrantFiled: May 12, 2022Date of Patent: October 3, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Publication number: 20230290679Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.Type: ApplicationFiled: March 9, 2022Publication date: September 14, 2023Inventors: Xi CEN, Kai WU, Dixiong WANG, Yi LUO
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Patent number: 11680312Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.Type: GrantFiled: June 27, 2022Date of Patent: June 20, 2023Assignee: Applied Materials, Inc.Inventors: Byunghoon Yoon, Seshadri Ganguli, Xi Cen
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Publication number: 20230109501Abstract: Some embodiments of the disclosure relate to methods for forming a bottom-up tungsten gapfill. Some embodiments of the disclosure relate to methods for reducing the deposition rate of tungsten by chemical vapor deposition. A molybdenum halide precursor is added to a tungsten halide precursor and a reductant. The co-flow of tungsten halide and molybdenum halide demonstrates either reduced or eliminated tungsten growth.Type: ApplicationFiled: September 28, 2021Publication date: April 6, 2023Applicant: Applied Materials, Inc.Inventors: Xi Cen, Kai Wu
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Publication number: 20230023235Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of filling a feature in a substrate includes: depositing a seed layer of tungsten nitride in the feature via a physical vapor deposition (PVD) process; depositing a liner layer of tungsten on the seed layer of tungsten nitride in the feature via a PVD process; and subsequently filling the feature with a tungsten bulk fill via a chemical vapor deposition (CVD) process.Type: ApplicationFiled: September 16, 2021Publication date: January 26, 2023Inventors: Xi CEN, Yun TAEWOONG, Shirish A. PETHE, Kai WU, Nobuyuki SASAKI, Wei LEI
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Publication number: 20220372617Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.Type: ApplicationFiled: May 21, 2021Publication date: November 24, 2022Applicant: Applied Materials, Inc.Inventors: Xi Cen, Kai Wu, Seshadri Ganguli, Xinming Zhang, Norman L. Tam, Abhilash Mayur
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Publication number: 20220359279Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.Type: ApplicationFiled: May 10, 2021Publication date: November 10, 2022Inventors: Xi CEN, Mingrui ZHAO, Peiqi WANG, Wei Min CHAN, Kai WU, Yi LUO, Liqi WU
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Publication number: 20220333232Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.Type: ApplicationFiled: June 27, 2022Publication date: October 20, 2022Applicant: Applied Materials, Inc.Inventors: Byunghoon Yoon, Seshadri Ganguli, Xi Cen
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Publication number: 20220336274Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: ApplicationFiled: July 5, 2022Publication date: October 20, 2022Inventors: Xi CEN, Kai WU, Min HEON, Wei Min CHAN, Tom Ho Wing YU, Peiqi WANG, Ju Ik KANG, Feihu WANG, Nobuyuki SASAKI, Chunming ZHOU
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Publication number: 20220325410Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.Type: ApplicationFiled: June 23, 2022Publication date: October 13, 2022Applicant: Applied Materials, Inc.Inventors: Byunghoon Yoon, Liqi Wu, Joung Joo Lee, Kai Wu, Xi Cen, Wei Lei, Sang Ho Yu, Seshadri Ganguli
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Publication number: 20220270871Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: ApplicationFiled: May 12, 2022Publication date: August 25, 2022Applicant: Applied Materials, Inc.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Patent number: 11401602Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.Type: GrantFiled: January 4, 2021Date of Patent: August 2, 2022Assignee: Applied Materials, Inc.Inventors: Byunghoon Yoon, Seshadri Ganguli, Xi Cen
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Patent number: 11380536Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: GrantFiled: May 5, 2020Date of Patent: July 5, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Patent number: 11355391Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.Type: GrantFiled: February 27, 2020Date of Patent: June 7, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Feiyue Ma, Kai Wu, Yu Lei, Kazuya Daito, Yi Xu, Vikash Banthia, Mei Chang, He Ren, Raymond Hoiman Hung, Yakuan Yao, Avgerinos V. Gelatos, David T. Or, Jing Zhou, Guoqiang Jian, Chi-Chou Lin, Yiming Lai, Jia Ye, Jenn-Yue Wang
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Publication number: 20220130724Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: ApplicationFiled: October 28, 2020Publication date: April 28, 2022Inventors: Xi CEN, Kai WU, Min HEON, Wei Min CHAN, Tom Ho Wing YU, Peiqi WANG, Ju Ik KANG, Feihu WANG, Nobuyuki SASAKI, Chunming ZHOU