Abstract: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Abstract: An apparatus for displaying sub page content includes a display unit, a storage unit, and a processing unit. The apparatus communicates with a network server. The processing unit obtains a webpage from the network server and one or more sub pages linked to the webpage. The display unit displays a first window for displaying label of each sub page designating a type which is binding with each sub page. The processing unit controls the display unit to display a second window for displaying the sub page content of the label displayed on the first window which is determined to be selected according to whether operation position of user's operation performed on the first window is on the area of the label of sub page displayed. A related method is also provided.

Abstract: A system for erecting a drilling rig mast includes a substructure having an open area that is defined therein by two laterally spaced-apart substructure sides and a first mast section that is adapted to be positioned at least partially within the open area of the substructure after the first mast section has been removably connected to the substructure. The system further includes, among other things, a second mast section that is adapted to be removably connected to the first mast section the said first mast section has been removably connected to the substructure, and a mast connection apparatus that is adapted to removably connect the second mast section to the first mast section when an upper end of the first mast section is raised relative to a lower end of the second mast section.

Abstract: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Abstract: A method for calibrating performance of a small array microphone is provided. The small array microphone includes at least two microphones. The method includes: measuring parameters of the microphones; recording the parameters in a storage media; and calibrating acoustic performance of the array microphone according to the parameters recorded in the storage media.

Abstract: Systems and methods for rig assembly and for erecting a mast of a rig and such systems with roller apparatus to facilitate movement of a mast section from a mover. In a first embodiment, the method includes erecting a rig mast section on a substructure, the substructure including a first substructure box spaced-apart from a second substructure box, the first substructure box comprising a first upper box above a first lower box and the second substructure box comprising a second upper box above a second lower box.

Abstract: A database server communicates with a plurality of client devices. Each of the client devices is used to create a program package to cooperatively develop a software project. An integrating package is created in a storage of the database server. When two or more client devices simultaneously access the integrating package, a storage region is created for each of the two or more client devices in a storage space of the integrating package. When the two or more client devices write the program package to the integrating package, the program package of each of the two or more client devices is automatically written into a corresponding storage region.

Abstract: An electronic device with a function of replying to a message based on the environment of the receiver is provided. The electronic device includes a storage unit, a receiving module, a determining module, a detecting module, an acquiring module, and a sending module. The storage unit stores an environment table which records relationships between receiver-environments and suitable replies. The receiving module receives a short message from a sending phone number. The determining module collects information to determine a current receiver-environment of the user of the electronic device. The detecting module detects an existing reply matching the current receiver-environment in the environment table. The acquiring module acquires the reply matching the current environment and the sending module sends a message which includes the acquired reply to the sending phone number.

Abstract: Generally, the subject matter disclosed herein is directed to, among other things, systems and methods for making up pivotably pinned structural connections that may be used for erecting drilling rig masts. One illustrative system includes a drilling rig mast having at least one support leg, a drilling rig mast support having at least one mast support shoe, and a pinned connection between the at least one support leg and the at least one mast support shoe. Additionally, the pinned connection of the disclosed system includes a pin, an oversized hole having at least a first hole portion, and a removable plug that is adapted to be inserted into the oversized hole, wherein the removable plug has at least a first plug surface portion, and wherein the first hole portion and the first plug surface portion define at least part of a pin hole that is adapted to receive the pin.

Abstract: A callback system and method are provided. The callback method includes steps as followed: determining whether or not a phone number of a call request is one of the predetermined phone numbers in the list when the communication terminal receives the call request, hanging up the call request and dialing back the phone number of the call request when the phone number of the call request is one of the predetermined phone numbers in the list. A communication terminal with a callback function is also provided.

Abstract: A method manages a web system having a plurality of sub-systems using a computing device. A web project is created for the web system and is stored in a storage of the computing device. Each of the sub-systems has a directory created under the web project. Programs of each sub-system are compiled to generate a dynamic link library (DLL) document of each sub-system. The DLL document of each sub-system is written into a corresponding directory under the web project.

Abstract: The present invention belongs to the technical field of semiconductor memory devices and specifically relates to a self-aligned vertical nonvolatile semiconductor memory device, Including: a semiconductor substrate, a drain region of a first doping type, two source regions of a second doping type, a stacked gate used to capture electrons; wherein the drain region, the two source regions and the stacked gate form two tunneling field effect transistors (TFETs) sharing one gate and one drain, the drain region current of each of the TFET is affected by the quantity and distribution of the charges in the stacked gate used to capture electrons, the drain is buried in the semiconductor substrate, the source regions above the drain region are separated from the drain through a channel and separated form each other through a region of the first doping type. The semiconductor memory device of the present invention features small unit area and simple manufacturing process.

Abstract: The present invention belongs to the technical field of semiconductor device manufacturing and specifically relates to a method for manufacturing a tunneling field effect transistor with a U-shaped channel. The U-shaped channel can effectively extend the transistor channel length, restrain the generation of leakage current in the transistor, and decrease the chip power consumption. The method for manufacturing a tunneling field effect transistor with a U-shaped channel put forward in the present invention is capable of realizing an extremely narrow U-shaped channel, overcoming the alignment deviation introduced by photoetching, and improving the chip integration degree.

Abstract: The present invention belongs to the technical field of microelectronic devices, specifically relates to a semiconductor memory structure and its manufacturing method thereof. The semiconductor memory structure which carries out erasing, writing and reading operation on the phase change memory or the resistance change memory through a tunneling field-effect transistor is formed, for one hand, the high current passed through the tunneling field-effect transistor when the p-n junction the biased positively, meeting the high current requirements for erasing of and writing of the phase change memory and the resistance change memory, and on the other hand, Vertical structure of the field-effect transistor can greatly improve the density of memory devices arrays. The present invention also discloses a method, which is very suitable for the memory chips, for the manufacturing of the semiconductor memory structure using self-aligned process.

Abstract: The present invention belongs to the technical field of semiconductor memories, in particular to a metal oxide semiconductor (MOS) transistor structure integrated with a resistance random access memory (RRAM). The MOS transistor structure comprises a MOS transistor and a RRAM formed on a substrate, wherein a gate dielectric layer of said MOS transistor extends to the surface of a drain region of said MOS transistor; and the part of the gate dielectric layer on the surface of the drain region of said MOS transistor faults a resistance-variable storage layer of said RRAM. In this invention, the high-quality dielectric layer of the MOS transistor and the resistance-variable storage layer of the RRAM are obtained by primary atomic layer deposition which integrates the RRAM and MOS transistor together without increasing steps.

Abstract: The invention relates to the technical field of semiconductor memories, in particular to a tunnel transistor structure integrated with a resistance random access memory and a manufacturing method thereof. The tunnel transistor structure in the present invention comprises a semiconductor substrate, and a tunnel transistor and a resistance random access memory formed on the semiconductor substrate, wherein the gate dielectric layer of the tunnel transistor extends to the surface of a drain region of the tunnel transistor; the part of the gate dielectric layer on the surface of the drain region of the tunnel transistor forms the resistance-variable storage layer of the resistance random access memory.

Abstract: The present invention belongs to the technical field of semiconductors and specifically relates to a method for manufacturing a vertical-channel tunneling transistor. In the present invention, the surrounding gate gate structure improves the control capacity of the gate and the source of narrow band gap material can enhance the device driving current. The method for manufacturing a vertical-channel tunneling transistor put forward by the present invention capable of controlling the channel length precisely features simple process, easy control and reduction of production cost.

Abstract: The invention belongs to the technical field of high-voltage, large-power devices and in particular relates to a method for manufacturing a semiconductor substrate of a large-power device. According to the method, the ion implantation is carried out on the front face of a floating zone silicon wafer first, then a high-temperature resistant metal is used as a medium to bond the back-off floating zone silicon wafer, and a heavily CZ-doped silicon wafer forms the semiconductor substrate. After bonding, the floating zone silicon wafer is used to prepare an insulated gate bipolar transistor (IGBT), and the heavily CZ-doped silicon wafer is used as the low-resistance back contact, so the required amount of the floating zone silicon wafers used is reduced, and production cost is lowered. Meanwhile, the back metallization process is not required after bonding, so the processing procedures are simplified, and the production yield is enhanced.

Abstract: Methods for connection parts of a mast of a drilling rig without using a crane or other lifting machine are disclosed. In certain aspects, these methods include moving parts of a mast to be assembled with trucks and positioning the parts with the trucks to facilitate their connection. This Abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure and is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims, 37 C.F.R. 1.72(b).

Abstract: The present invention belongs to the technical field of semiconductor device manufacturing, and specifically discloses a method for manufacturing a gate-control diode semiconductor storage device. The present invention manufactures gate-control diode semiconductor memory devices through a low-temperature process featuring a simple process, low manufacturing cost and capacity of manufacturing gate-control diode memory devices with a high driving current and small sub-threshold swing. The method for manufacturing a gate-control diode semiconductor memory device proposed by the present invention is especially applicable to the manufacturing of flat panel displays and phase change memories and memory devices based on flexible substrate.