Abstract: A capacitive device includes a substrate (110), a first electrode (130, 140, 1220) located over the substrate and a second electrode (170, 1070, 1071, 1250) located over the first electrode, movable relative to the first electrode, and capacitively coupled to the first electrode. The device further includes a first control electrode (120, 150, 1210) located over the substrate and a second control electrode (160, 180, 1060, 1061, 1080, 1081, 1240) located over the first control electrode, movable relative to the first control electrode, and capacitively coupled to the first control electrode. The first and second control electrodes actuate the second electrode toward the first electrode.

Abstract: A Micro-Electromechanical Systems (MEMS) device (100) having conductively filled vias (141). A MEMS component (124) is formed on a substrate (110). The substrate has conductively filled vias (140) extending therethrough. The MEMS component (124) is electrically coupled to the conductively filled vias (140). The MEMS component (124) is covered by a protective cap (150). An electrical interconnect (130) is formed on a bottom surface of the substrate (110) for transmission of electrical signals to the MEMS component (124), rather than using wirebonds.

Abstract: A Micro-Electromechanical System (MEMS) switch (100) having a single, center hinge (120) which supports a membrane-type electrode (104) on a substrate (101). The single, center hinge (120) has a control electrode (104) coupled to the substrate (101) by an anchor (113), a hinge collar (121), a set of hinge arms (122, 123). The control electrode (104) has a shorting bar (106) coupled thereto and is electrically isolated from another control electrode (105), which is formed on the substrate (101). A travel stop (130) is positioned between the substrate and the control electrode (104). Another aspect of the present invention is a Single Pole, Double Throw (SPDT) switch (160) into which is incorporated the single, center hinge (170) and the travel stop (185, 186).

Abstract: A micro electromechanical switch is formed on a substrate using a microplatform structure suspended on a spring suspension. The spring suspension is attached on one end to an anchor structure and extends in a substantially octagonal direction over a signal line. The microplatform has a shorting bar positioned facing a gap in the signal line and an electrical corset is formed on the signal fine to form a capacitor structure which is electrostatically attractable toward a bottom electrode upon application of a selected voltage. The switch functions from DC to at least 50 GHz with an electrical isolation of 35 dB and an insertion loss of 0.5 dB at 20 GHz. The RF switch has applications in telecommunications including wireless communications.

Abstract: A microstructure includes a substrate and a movable platform which is tethered by a first cantilever arm to the substrate. The first cantilever arm is comprised of a sandwich of first and second materials, the first and second materials exhibiting either different thermal coefficients of expansion or a piezoelectric layer. A second cantilever arm includes a first end which is tethered to the platform and a free distal end which is positioned to engage the substrate. The second cantilever arm is constructed similarly to the first cantilever arm. A controller enables movement of the platform through application of signals to both the first cantilever arm and the second cantilever arm to cause flexures of both thereof. The second cantilever arm, through engagement of its free end with the substrate, aids the action of the first cantilever arm in moving the platform.

Abstract: A cantilever microstructure includes a cantilever arm with a proximal end connected to a substrate and a freely movable distal end. The cantilever arm comprises first and second sections and includes a continuous layer which exhibits a first thermal co-efficient of expansion (TCE). In one embodiment, an electrical contact is positioned at the distal end of the cantilever arm. A first layer is positioned on a surface of the continuous layer and along the first section thereof. The first layer exhibits a second TCE which is different from the first TCE of the continuous layer. A second layer is positioned on a surface of the continuous layer and along the second section thereof. The second layer exhibits a third TCE which is different from the first TCE of the continuous layer. Electrical control circuitry selectively applies signals to the first and second layers to cause a heating thereof and a flexure of the cantilever arm so as to bring the distal end thereof into contact with a conductive substrate.

Abstract: An optical shutter apparatus includes a source of illumination and a first aperture plate positioned in a path of light from the source of illumination. A cantilever shutter is positioned at each aperture in the aperture plate and includes at least two bonded layers, one being an electrically resistive layer which exhibits a first thermal coefficient of expansion (TCE) and the second layer exhibiting a second TCE that is different from the first TCE. A proximal end of the bonded layers is attached to the aperture plate at each aperture and a distal portion thereof covers the respective aperture when in position thereover. A controller applies signals to the first electrically resistive layer to cause a heating of the first and second layers and a resultant unequal expansion thereof. The expansion causes a flexure of the cantilever shutter and moves the distal portion thereof to either cover or uncover the aperture, which, when uncovered, allows transmission of the illumination therethrough.

Abstract: A method for manufacturing a micro electro-static motor which is provided with a curved bearing structure for rotatably supporting the rotor of the micro electro-static motor in a line contact manner in order to reduce the frictional torque of the micromotor. The micro electro-static motor is also provided with four on-chip rotational speed detection devices to facilitate its rotational speed measurement and the closed-loop control of the rotational speed. The on-chip rotational speed detection devices are accomplished by forming four P-N junctions in a silicon substrate. The curved bearing structure can be accomplished by etching of a phosphosilicate glass/silicon oxide composite sacrificial layer to form a curved bearing opening due to the large difference of etch rates between the phosphosilicate glass and the silicon oxide in buffered HF and by forming a curved bearing in the curved bearing opening.