Abstract: The present disclosure provides a method and system for optimizing first-diffraction-order reconstruction of holograms, a device and a medium, and relates to the field of image processing. The method includes: acquiring a target image; determining a target image light field according to the target image; calculating a target diffraction field for the target image light field by performing backward propagation by a set distance; constructing a U-Net network model; and inputting the target diffraction field into a trained U-Net network model to acquire an optimized hologram. The trained U-Net network model is obtained by constructing a U-Net network model and training and optimizing the U-Net network model, thereby continuously improving the quality of the zero-diffraction-order reconstructed image of the initial hologram and finally achieving the effect of optimizing the first-diffraction-order reconstructed image of the hologram.

Abstract: The present disclosure discloses a treatment process and treatment system of enhanced up-flow multiphase wastewater oxidation. The treatment process includes the following steps: 1) the wastewater is fed into the up-flow multiphase wastewater oxidation system for oxidation treatment; 2) the wastewater is fed to the solid-liquid separation system for solid-liquid separation, the separated heterogeneous catalytic carrier (5) is fed back to the up-flow multiphase wastewater oxidation system, and the wastewater is fed to the neutralization and degassing system; 3) the wastewater is fed to the neutralization and degassing system to adjust a pH of the wastewater to 5.5-7.5, and then is degassed by stirring; 4) the wastewater is fed to the flocculation and sedimentation system for sludge-water separation, a supernatant is discharged, and an outward harmless treatment is performed after a pressure filtration of a sedimentary iron sludge.

Abstract: Embodiments of the present disclosure disclose a semiconductor device and a method for manufacturing the same. The semiconductor device includes an active region and a passive region, the semiconductor device further includes a source, a gate and a drain located on one side of a substrate, the gate being located between the source and the drain, the gate includes a first end portion and an intermediate portion, the intermediate portion, the source and the drain all being located in the active region, and the first end portion being located in the passive region, the first end portion includes a first sub end portion and a second sub end portion. In a first direction, an extension width of the first sub end portion is greater than that of the intermediate portion, and an extension width of the second sub end portion is greater than that of the first sub end portion.

Abstract: A honeycomb structure body, which includes a honeycomb body and a skin layer, the honeycomb body including axially extending channels defined by a porous wall, wherein a radial path of a radial section of the honeycomb body from a central axis to the skin layer consists of a porous wall inner section and a porous wall outer section in sequence, an average wall thickness of inner porous walls provided in the porous wall inner section is smaller than an average wall thickness of outer porous walls provided in the porous wall outer section, and a length of the porous wall inner section in the radial path accounts for 71%-95%. The specific structure of the honeycomb structure body not only increases the strength of the honeycomb structure body, but also ensures good thermal shock resistance and small back pressure.

Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.

Abstract: The present disclosure provides a semiconductor device and a method for manufacturing the same, and it relates to a field of semiconductor technology. The semiconductor device includes a substrate, a semiconductor layer, a dielectric layer, a source, a drain, and a gate, wherein a first face of the gate close to a side of the drain and close to the semiconductor layer has a first curved face. A gate trench corresponding to the gate is provided on the dielectric layer, a material of the gate being filled in the gate trench, and at least a part of a second face of the gate trench in contact with the gate is a second curved face which extends from a surface of the dielectric layer away from the semiconductor layer toward the semiconductor layer.

Abstract: A semiconductor device, comprising: a semiconductor substrate; a source, a gate and a drain fabricated on one side of the semiconductor substrate; a via hole region reserved in the region of the source; and an etching stopping layer made in the via hole region as well as a via hole under the etching stopping layer penetrating through the semiconductor substrate.

Abstract: The present disclosure provides a semiconductor device and a method for manufacturing the same, and it relates to a field of semiconductor technology. The semiconductor device includes a substrate, a semiconductor layer, a dielectric layer, a source, a drain, and a gate, wherein a first face of the gate close to a side of the drain and close to the semiconductor layer has a first curved face. A gate trench corresponding to the gate is provided on the dielectric layer, a material of the gate being filled in the gate trench, and at least a part of a second face of the gate trench in contact with the gate is a second curved face which extends from a surface of the dielectric layer away from the semiconductor layer toward the semiconductor layer.

Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.

Abstract: A semiconductor device comprises: a substrate; a semiconductor layer formed on the substrate; a source electrode, a drain electrode and a gate electrode between the source electrode and the drain electrode formed on the semiconductor layer; and a source field plate formed on the semiconductor layer. The source field plate sequentially comprises: a start portion electrically connected to the source electrode; a first intermediate portion spaced apart from the semiconductor layer with air therebetween; a second intermediate portion disposed between the gate electrode and the drain electrode in a horizontal direction, without air between the second intermediate portion and the semiconductor layer; and an end portion spaced apart from the semiconductor layer with air therebetween.

Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.

Abstract: A semiconductor device, comprising: a semiconductor substrate; a source, a gate and a drain fabricated on one side of the semiconductor substrate; a via hole region reserved in the region of the source; and an etching stopping layer made in the via hole region as well as a via hole under the etching stopping layer penetrating through the semiconductor substrate.

Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.

Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.

Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.

Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.

Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.

Abstract: A semiconductor device comprises: a substrate; a semiconductor layer formed on the substrate; a source electrode, a drain electrode and a gate electrode between the source electrode and the drain electrode formed on the semiconductor layer; and a source field plate formed on the semiconductor layer. The source field plate sequentially comprises: a start portion electrically connected to the source electrode; a first intermediate portion spaced apart from the semiconductor layer with air therebetween; a second intermediate portion disposed between the gate electrode and the drain electrode in a horizontal direction, without air between the second intermediate portion and the semiconductor layer; and an end portion spaced apart from the semiconductor layer with air therebetween.

Abstract: An exemplary printed circuit board testing method includes determining whether there is an open shielding box every a time interval. The method then transmits a first control signal including a first predetermined path to a robot when there is an open shielding box. Next, the method obtains an image captured by a camera and recognizes a unique identifier of a to-be-tested PCB in the obtained image. The method then determines a second predetermined path corresponding to the determined open shielding box, and transmits a second control signal comprising the determined second predetermined path to the robot. Next, the method closes the determined shielding box when a duration after transmitting the second control signal reaches a predetermined time, and controls a testing software to test the to-be-tested PCB, to generate a testing result corresponding to the unique identifier of the to-be-tested PCB.