Abstract: The present invention discloses a graphene cochlear implant electrode and a fabrication method thereof. The electrode comprises a tip portion, bendable portions, contact electrodes, an electrode carrier and wire electrodes, wherein the tip portion is disposed at forepart of the cochlear implant electrode, the electrode carrier wraps the wire electrodes and half wraps the contact electrodes connected to the wire electrodes one by one, and each bendable portion is an annular groove disposed on the electrode carrier; each contact electrode comprises an inner contact and an outer contact, when bending, the inner contact faces the modiolus while the outer contact faces away from the modiolus; and each wire electrode is wavy.

Abstract: Disclosed are a graphene oxide cochlear implant electrode and a manufacturing method thereof. The graphene oxide cochlear implant electrode includes an electrode tip, an electrode carrier, electrode contacts, a first positioning ring, a second positioning ring, a boosting portion, an electrode wire, a loop electrode, a loop electrode wire and a wire array, herein the electrode tip is arranged at a foremost portion of the cochlear implant electrode, the electrode carrier is silica gel grafted with a graphene oxide, the electrode carrier wraps the electrode wire and semi-wraps the electrode contacts connected to the electrode wire one by one, and the electrode carrier is slightly curved as a whole; and the electrode wire is connected to the electrode contacts one by one and forms a spiral shape through the first positioning ring, the second positioning ring and the boosting portion.

Abstract: A millimeter-wave active antenna unit and an interconnection structure between PCBs is provided. The interconnection structure between PCBs comprises a mainboard and an AIP antenna module. The mainboard is a first multilayer PCB on which a signal transmission line and a first pad electrically connected to the signal transmission line are provided. The AIP antenna module is a second multilayer PCB on which a second pad, an impedance matching transformation branch, an impedance line and a signal processing circuit are provided. The mainboard and the AIP antenna module are interconnected by directly welding multiple PCBs.

Abstract: A millimeter-wave active antenna unit and an interconnection structure between PCBs is provided. The interconnection structure between PCBs comprises a mainboard and an AIP antenna module. The mainboard is a first multilayer PCB on which a signal transmission line and a first pad electrically connected to the signal transmission line are provided. The AIP antenna module is a second multilayer PCB on which a second pad, an impedance matching transformation branch, an impedance line and a signal processing circuit are provided. The mainboard and the AIP antenna module are interconnected by directly welding multiple PCBs.

Abstract: Disclosed are a graphene oxide cochlear implant electrode and a manufacturing method thereof. The graphene oxide cochlear implant electrode includes an electrode tip, an electrode carrier, electrode contacts, a first positioning ring, a second positioning ring, a boosting portion, an electrode wire, a loop electrode, a loop electrode wire and a wire array, herein the electrode tip is arranged at a foremost portion of the cochlear implant electrode, the electrode carrier is silica gel grafted with a graphene oxide, the electrode carrier wraps the electrode wire and semi-wraps the electrode contacts connected to the electrode wire one by one, and the electrode carrier is slightly curved as a whole; and the electrode wire is connected to the electrode contacts one by one and forms a spiral shape through the first positioning ring, the second positioning ring and the boosting portion.

Abstract: The present invention discloses a graphene cochlear implant electrode and a fabrication method thereof. The electrode comprises a tip portion, bendable portions, contact electrodes, an electrode carrier and wire electrodes, wherein the tip portion is disposed at forepart of the cochlear implant electrode, the electrode carrier wraps the wire electrodes and half wraps the contact electrodes connected to the wire electrodes one by one, and each bendable portion is an annular groove disposed on the electrode carrier; each contact electrode comprises an inner contact and an outer contact, when bending, the inner contact faces the modulus while the outer contact faces away from the modulus; and each wire electrode is wavy.

Abstract: Flexible thermoelectric devices including an array of slot openings on a flexible substrate, and methods of making and using the same are provided. The slot openings on the flexible substrate can help remove the tension or compression induced during bending of the devices. Slot openings each extend along a cross direction substantially perpendicular to the longitudinal direction of the substrate.

Abstract: A flexible polymeric dielectric layer (12) having first and second major surfaces, the first major surface having a conductive layer (20) thereon, the dielectric layer having at least one conduit (10) extending from the second major surface to the first major surface, the conduit having at least one lateral dimension of at least about one centimeter and being at least partially filled with conductive material (18), the conductive layer including at least one conductive feature (21) substantially aligned with the conduit (10), the conductive feature (21) supporting a plurality of light emitting semiconductor devices (22).

Abstract: A capacitive touch sensitive apparatus includes a touch sensitive viewing area configured to detect a location of a touch applied to the touch sensitive viewing area by detecting a change in a coupling capacitance. A border area surrounds the touch sensitive viewing area. An electrically conductive first electrode includes an active portion disposed in and extending across the touch sensitive viewing area and an end portion at an end of the first electrode disposed in the border area for connection to a controller. The active portion of the first electrode has a substantially uniform first sheet resistance across the viewing area. The end portion of the first electrode is patterned in the form of an electrically conductive mesh including a plurality of interconnected conductive traces defining a plurality of interstices therebetween, the traces having substantially the first sheet resistance, and the interstices having a higher second sheet resistance.

Abstract: A reflection sheet and a method of manufacturing a reflection sheet are disclosed. The reflection sheet comprises a substrate layer and a reflective layer formed on the substrate layer, wherein the reflective layer comprises an alloy consisting of silver (Ag), palladium (Pd) and neodymium (Nd).

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces with a conductive layer on the first major surface and at least one cavity in the first major surface with a conductive layer in the cavity that supports a light emitting semiconductor device. The conductive layer in the cavity is electrically isolated from the second major surface of the dielectric layer.

Abstract: A reflection sheet and a method of manufacturing a reflection sheet are disclosed. The reflection sheet comprises a substrate layer and a reflective layer formed on the substrate layer, wherein the reflective layer comprises an alloy consisting of silver (Ag), palladium (Pd) and neodymium (Nd).

Abstract: Provided is a flexible light emitting semiconductor device (26), such as an LED device, that includes a flexible dielectric layer (12) having first and second major surfaces and at least one via (10) extending through the dielectric layer from the first to the second major surface, with a conductive layer (19, 20, 18) on each of the first and second major surfaces and in the via. The conductive layer (18) in the via supports a light emitting semiconductor device (26) and is electrically isolated from the conductive layer (19) on the first major surface of the dielectric layer.

Abstract: A flexible polymeric dielectric layer (12) having first and second major surfaces, the first major surface having a conductive layer (20) thereon, the dielectric layer having at least one conduit (10) extending from the second major surface to the first major surface, the conduit having at least one lateral dimension of at least about one centimeter and being at least partially filled with conductive material (18), the conductive layer including at least one conductive feature (21) substantially aligned with the conduit (10), the conductive feature (21) supporting a plurality of light emitting semiconductor devices (22).

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: Provided is a flexible light emitting semiconductor device (26), such as an LED device, that includes a flexible dielectric layer (12) having first and second major surfaces and at least one via (10) extending through the dielectric layer from the first to the second major surface, with a conductive layer (19, 20, 18) on each of the first and second major surfaces and in the via. The conductive layer (18) in the via supports a light emitting semiconductor device (26) and is electrically isolated from the conductive layer (19) on the first major surface of the dielectric layer.

Abstract: Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces with a conductive layer on the first major surface and at least one cavity in the first major surface with a conductive layer in the cavity that supports a light emitting semiconductor device. The conductive layer in the cavity is electrically isolated from the second major surface of the dielectric layer.