Patents by Inventor Xia-Xi Zheng

Xia-Xi Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOCVD method for growing INALGAN/GAN heterostructure
    Patent number: 12347678
    Abstract: A MOCVD method for growing an InAlGaN/GaN heterostructure comprises steps: sequentially growing a nitride nucleation layer, a GaN buffer layer, an InAlGaN barrier layer on a substrate; using a precursor gas containing silane to in-situ grow a SiNx protective layer on the InAlGaN barrier layer at a temperature of 950-1000° C. in the same reaction chamber. Thereby is achieved a SiNx/InAlGaN/GaN heterostructure having an ultrathin barrier layer, which is suitable to fabricate HEMT elements. The present invention needn't take sample out of the reaction chamber and thus can prevent the heterostructure from oxidation and damage.
    Type: Grant
    Filed: January 9, 2023
    Date of Patent: July 1, 2025
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Edward Yi Chang, You-Chen Weng, Xia-Xi Zheng
  • MOCVD METHOD FOR GROWING INALGAN/GAN HETEROSTRUCTURE
    Publication number: 20240213020
    Abstract: A MOCVD method for growing an InAlGaN/GaN heterostructure comprises steps: sequentially growing a nitride nucleation layer, a GaN buffer layer, an InAlGaN barrier layer on a substrate; using a precursor gas containing silane to in-situ grow a SiNx protective layer on the InAlGaN barrier layer at a temperature of 950-1000° C. in the same reaction chamber. Thereby is achieved a SiNx/InAlGaN/GaN heterostructure having an ultrathin barrier layer, which is suitable to fabricate HEMT elements. The present invention needn't take sample out of the reaction chamber and thus can prevent the heterostructure from oxidation and damage.
    Type: Application
    Filed: January 9, 2023
    Publication date: June 27, 2024
    Applicant: National Yang Ming Chiao Tung University
    Inventors: Edward Yi CHANG, You-Chen WENG, Xia-Xi Zheng