Patents by Inventor Xiabing Lou

Xiabing Lou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • III-nitride transistor with a modified drain access region
    Patent number: 11876130
    Abstract: This disclosure describes the structure and technology to modify the free electron density between the gate and drain electrodes of III-nitride semiconductor transistors. Electron density reduction regions (EDR regions) are disposed between the gate and the drain of the transistor structure. In certain embodiments, the EDR regions are created using trenches. In other embodiments, the EDR regions are created by implanting the regions with a species that reduces the free electrons in the channel layer. In another embodiment, the EDR regions are created by forming a cap layer over the barrier layer, wherein the cap layer reduces the free electrons in the channel beneath the cap layer. In another embodiment, a cap layer may be formed in the EDR regions, and doped regions may be created outside of the EDR regions, wherein the impurities act as electron donors.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: January 16, 2024
    Assignee: Finwave Semiconductor, Inc.
    Inventors: Bin Lu, Dongfei Pei, Xiabing Lou
  • III-Nitride Transistor With A Modified Drain Access Region
    Publication number: 20210167202
    Abstract: This disclosure describes the structure and technology to modify the free electron density between the gate and drain electrodes of III-nitride semiconductor transistors. Electron density reduction regions (EDR regions) are disposed between the gate and the drain of the transistor structure. In certain embodiments, the EDR regions are created using trenches. In other embodiments, the EDR regions are created by implanting the regions with a species that reduces the free electrons in the channel layer. In another embodiment, the EDR regions are created by forming a cap layer over the barrier layer, wherein the cap layer reduces the free electrons in the channel beneath the cap layer. In another embodiment, a cap layer may be formed in the EDR regions, and doped regions may be created outside of the EDR regions, wherein the impurities act as electron donors.
    Type: Application
    Filed: December 2, 2020
    Publication date: June 3, 2021
    Inventors: Bin Lu, Dongfei Pei, Xiabing Lou