Patents by Inventor Xiadong Feng

Xiadong Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10786548
    Abstract: The teachings generally relate to a combination therapy and are directed to pharmaceutical compositions and methods for administering a combination of an ?v?3 antagonist with an ?2?1 antagonist to a subject. The methods are for use in inhibiting, preventing, or reversing angiogenesis, as well as in treating cancer. In some embodiments, the compositions and methods include a combined administration of echistatin and VP12 (ECL12).
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: September 29, 2020
    Assignee: CALIFORNIA NORTHSTATE COLLEGE OF PHARMACY
    Inventor: Xiadong Feng
  • Publication number: 20200069771
    Abstract: The teachings provided herein generally relate to a combination therapy and are directed to pharmaceutical compositions and methods for administering a combination of an ?v?3 antagonist with an ?2?1 antagonist to a subject. The methods are for use in inhibiting, preventing, or reversing angiogenesis, as well as in treating cancer. In some embodiments, the compositions and methods include a combined administration of echistatin and VP12 (ECL12).
    Type: Application
    Filed: August 20, 2019
    Publication date: March 5, 2020
    Inventor: XIADONG FENG
  • Publication number: 20070159080
    Abstract: A new transparent-charge-injection-layer consisting of LiF/Al/Al-doped-SiO has been developed as (i) a cathode for top emitting organic light-emitting diodes (TOLEDs) and as (ii) a buffer layer against damages induced by energetic ions generated during deposition of other functional thin films by sputtering, or plasma-enhanced chemical vapor deposition. A luminance of 1900 cd/m2 and a current efficiency of 4 cd/A have been achieved in a simple testing device structure of ITO/TPD (60 nm)/Alq3 (40 nm)/LiF (0.5 nm)Al (3 nm)/Al-doped-SiO (30 nm). A thickness of 30 nm of Al-doped SiO is also found to protect organic layers from ITO sputtering damage.
    Type: Application
    Filed: November 21, 2003
    Publication date: July 12, 2007
    Applicant: Luxell Technologies, Inc.
    Inventors: Sijin Han, Xiadong Feng, Zhenghong Lu, Richard Wood, David Johnson