Abstract: A method of forming a semiconductor structure includes: providing an initial substrate having a first region and a second region; forming a first substrate on the initial substrate; forming a first insulating layer on the first substrate; forming a second substrate on the first insulating layer; removing the second substrate in the second region to form a second insulating layer on the first insulating layer in the second region; and forming a plurality of passive devices on the second insulating layer in the second region and forming a plurality of active devices on the second substrate in the first region.

Abstract: An optical device and its fabrication method are provided. The method includes: providing a substrate including a coupling region; forming a first dielectric layer on the substrate; forming an initial waveguide groove in the first dielectric layer on the coupling region; forming a patterned layer on a surface of the first dielectric layer and in the initial waveguide groove, exposing at least a portion of a bottom of the initial waveguide groove; and using the patterned layer as a mask to etch the first dielectric layer, to form a waveguide structure on the substrate. The waveguide structure includes a waveguide end structure on the coupling region.

Abstract: A method of forming a semiconductor structure includes: providing an initial substrate having a first region and a second region; forming a first substrate on the initial substrate; forming a first insulating layer on the first substrate; forming a second substrate on the first insulating layer; removing the second substrate in the second region to form a second insulating layer on the first insulating layer in the second region; and forming a plurality of passive devices on the second insulating layer in the second region and forming a plurality of active devices on the second substrate in the first region.