Patents by Inventor Xian-Rui Chang

Xian-Rui Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices comprising 2D-materials and methods of manufacture thereof
    Patent number: 10403744
    Abstract: A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: September 3, 2019
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Shih-Yen Lin, Samuel C. Pan, Chong-Rong Wu, Xian-Rui Chang
  • Semiconductor device with transition metal dichalocogenide hetero-structure
    Patent number: 9899537
    Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: February 20, 2018
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Shih-Yen Lin, Chi-Wen Liu, Chong-Rong Wu, Xian-Rui Chang
  • Semiconductor Device with Transition Metal Dichalocogenide Hetero-Structure
    Publication number: 20170345944
    Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.
    Type: Application
    Filed: May 31, 2016
    Publication date: November 30, 2017
    Inventors: Shih-Yen Lin, Chi-Wen Liu, Chong-Rong Wu, Xian-Rui Chang
  • Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof
    Publication number: 20160379901
    Abstract: A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.
    Type: Application
    Filed: June 29, 2015
    Publication date: December 29, 2016
    Inventors: Shih-Yen Lin, Samuel C. Pan, Chong-Rong Wu, Xian-Rui Chang