Abstract: The invention provides a glutamate decarboxylase mutant with improved pH tolerance and use thereof in synthesis of gamma-aminobutyric acid. The mutant is obtained by mutating glutamate decarboxylase having an amino acid sequence as shown in SEQ ID NO. 3. The enzyme activity of the mutant at pH 6.5 is improved to 178% of the original enzyme (SEQ ID NO. 3). The final yield of 1000 g of substrate fed in batches in a 5L tank for 12 h is up to 688.13 g/L, which is about 52% higher than the productivity of the original glutamate decarboxylase. The final molar conversion rate can reach 98.2%. The invention not only broadens the enzyme activity of GAD under the optimum pH, but also broadens the enzyme activity of GAD under the neutral pH, and enhances the capability of the GAD to synthesize gamma-aminobutyric acid, and therefore is more suitable for industrial production.

Abstract: A modified cutinase is disclosed. The cutinase has the modified amino acid sequence of SEQ ID NO: 2, wherein the modification is a substitution of asparagine at position 181 with alanine, or substitutions of asparagine at position 181 with alanine and phenylalanine at position 235 with leucine. The modified enzyme has improved PET-hydrolytic activity, and thus, the high-activity PET hydrolase is obtained, and the industrial application value of the PET hydrolase is enhanced.

Abstract: A flexible probe for microLED defect detection includes: a flexible base and a flexible circuit film layer. The flexible base includes a flexible substrate and flexible protrusions located on the flexible substrate. A circuit for illuminating a microLED to be detected is provided inside the flexible circuit film layer. The flexible circuit film layer is attached to a surface on a side of the flexible base on which the flexible protrusions are provided, at least a portion of the circuit of the flexible circuit film layer is located on the flexible protrusions, and when the flexible probe for MicroLED defect detection is placed on the MicroLED, the circuit on the flexible protrusions abuts against pins of the MicroLED to be detected and is electrically connected to the pins.

Abstract: The present disclosure provides a method and system for manufacturing a semiconductor layer. The method includes: placing a first wafer in a cavity to form a metal film on the first wafer; before forming the metal film, the temperature inside the cavity is a first temperature; transferring the first wafer on which the metal film has been formed out of the cavity; the temperature in the cavity is a second temperature, and the second temperature is greater than the first temperature; introducing an inert gas into the cavity to cool the cavity, such that the temperature in the cavity is equal to the first temperature; after the temperature in the cavity is equal to the first temperature, placing a second wafer in the cavity to form the metal film on the second wafer. The manufacturing method can reduce the defects on the surface of the metal film.

Abstract: A photoelectrochemical device includes a substrate, a first titanium nitride (TiN) layer coated on the substrate, and a first nitrogen-doped titanium dioxide (N—TiO2) layer coated on the first TiN layer. The photoelectrochemical device has enhanced photoelectric conversion efficiency and can be made by a simple, effective method, thereby shortening the manufacturing time and lowering the manufacturing cost thereof.

Abstract: A method for updating software comprises transmitting a first version of the software and a first decryption key to a computing system. The method further comprises generating a second version of the software and a second decryption key. The method further comprises encrypting the second version of the software and the second decryption key. The encrypted second version of the software is configured to be decrypted using the first decryption key and not the second decryption key. The method further comprises transmitting the encrypted second version of the software and the encrypted second decryption key to the computing system.

Abstract: This application provides an image defect detection method. The method includes obtaining a first image and a second image of a flawless image. A third image is obtained from the second image and the first image, and a fourth image is obtained according to the second image and an image to be detected. A fifth image is obtained based on the third image and the second image. A sixth image is obtained based on the third image and the fourth image. A seventh image is obtained from the fifth image and the sixth image. A defect value of the fourth image is obtained according to the third image and the seventh image. A detection result of the fourth image is determined based on the defect value.

Abstract: A method of identifying characters in images extracts features of a detection image including characters. Enhancement processing is performed on the detection image according to the features to obtain an enhanced image. Closed edges of the characters are detected in the enhanced image. First rectangular outlines of the characters are determined according to the closed edges. The first rectangular outlines are corrected to obtain second rectangular outlines. The characters are cropped from the detection image according to the second rectangular outlines. The method identifies characters in images accurately and rapidly.

Abstract: A method of recognizing target objects in images obtains a detection image of a target object. A template image is generated according to the target object. The detection image is compared with the template image to obtain a comparison result. Candidate regions of the target object are determined in the detection image according to the comparison result. At least one target region of the target object is obtained from the candidate regions. The method detects target objects in images very rapidly.

Abstract: The present disclosure provides a method and system for manufacturing a semiconductor layer. The method includes: placing a first wafer in a cavity to form a metal film on the first wafer; before forming the metal film, the temperature inside the cavity is a first temperature; transferring the first wafer on which the metal film has been formed out of the cavity; the temperature in the cavity is a second temperature, and the second temperature is greater than the first temperature; introducing an inert gas into the cavity to cool the cavity, such that the temperature in the cavity is equal to the first temperature; after the temperature in the cavity is equal to the first temperature, placing a second wafer in the cavity to form the metal film on the second wafer. The manufacturing method can reduce the defects on the surface of the metal film.

Abstract: A light guide plate, a manufacturing method thereof, and a display device are provided. The light guide plate includes a glass substrate, an adhesive layer arranged at a surface of the glass substrate, a reflector arranged at a surface of the adhesive layer away from the glass substrate, and a total reflection structure distributed in the adhesive layer.

Abstract: A light guide plate, a manufacturing method thereof, and a display device are provided. The light guide plate includes a glass substrate, an adhesive layer arranged at a surface of the glass substrate, a reflector arranged at a surface of the adhesive layer away from the glass substrate, and a total reflection structure distributed in the adhesive layer.

Abstract: A circuit and method of power on initialization for a configuration memory of an FPGA. The circuit includes: a decoding circuit, a driving circuit, and a configuration memory, where when 0 is written for the 1st time, the decoding circuit turns on a word line corresponding to an address in the configuration memory, and the driving circuit writes content of the word line into 0; and when 0 is written for the ith time, the decoding circuit turns on at least one word line corresponding to at least one address in the configuration memory, and the driving circuit writes content of each word line in the at least one word line into 0, the number of the at least one address being less than or equal to a sum of addresses that have completed writing of 0 for the previous (i?1)th time.

Abstract: A shock-resistance testing apparatus includes a support base, a first rotating component and a controller provided on the support base. A second rotating component is coupled to one side of the first rotating component. A testing board is placed on the first rotating component. A falling board is placed on the testing board. The controller controls the first rotating component to drive the second rotating component rotating from one side of the testing board to another side of the testing board. The controller controls the second rotating component to lift the testing board. The controller controls the second rotating component to move away from the testing board so that the testing board falls.

Abstract: A visible light communication LED having a spiral inductance coil and a circular core is provided, comprising a sapphire substrate provided with a positive electrode welding spot and a negative electrode welding spot, and a plurality of LED cores deposited on the sapphire substrate. The negative electrode of a former core is connected with the positive electrode of a latter core, and the positive electrode of the first core and the negative electrode of the last core are respectively connected to the positive electrode welding spot and the negative electrode welding spot on the substrate. According to the present invention, each of the LED cores is surrounded by a spiral inductance coil, and a pin of one end of the spiral inductance coil is connected via a connecting wire with the negative electrode of an adjacent LED core, while the other end is directly connected with the positive electrode of the LED core that is surrounded by the spiral inductance coil.

Abstract: An embedded pole is provided which includes a conductive path and a movable contact. The movable contact is selectively movable between a first position in which the conductive path is closed and a second position in which the conductive path is open. An insulation element is coupled to and selectively movable in conjunction with the movable contact. The embedded pole further includes a sensor coupled to the insulation element and operable to detect a displacement of the insulation element that corresponds to a movement of the movable contact between the first position and the second position.

Abstract: A visible light communication emission device with improved response frequency is provided, comprising a substrate, wherein an inductance coil module is provided on the substrate, a LED chip matrix formed by series connection of a plurality of LED chips is provided on the inductance coil module, and the inductance coil module and the LED chip matrix are connected in series, wherein inductance value L of the inductance coil module is configured to be: L=1/(?2C), with C representing capacity in the device provided by LED chips and ? representing frequency, wherein the inductance coil module comprises more than one inductance coil whose composition materials from inside to outside are successively Cr, Al, Cr, Ti, and Ag.

Abstract: A backlight module, a light guide panel assembly and a manufacturing method therefor are disclosed. The light guide panel assembly includes: two light guide panels; and bubble glue disposed between opposing surfaces of the two light guide panels and configured to adhere the two light guide panels together.

Abstract: A visible light communication emission device with improved response frequency is provided, comprising a substrate, wherein an inductance coil module is provided on the substrate, a LED chip matrix formed by series connection of a plurality of LED chips is provided on the inductance coil module, and the inductance coil module and the LED chip matrix are connected in series, wherein inductance value L of the inductance coil module is configured to be: L=1/(?2C), with C representing capacity in the device provided by LED chips and ? representing frequency, wherein the inductance coil module comprises more than one inductance coil whose composition materials from inside to outside are successively Cr, Al, Cr, Ti, and Ag.