Abstract: The present invention provides a crystal of a compound represented by formula I as a 3-hydroxy-5-pregnane-20-one derivative and a preparation method therefor. Specifically, the present invention provides novel crystal forms A-C of the compound represented by formula I and a preparation method therefor. The novel crystal forms of the compound represented by formula I of the present invention have excellent thermal stability and mechanical stability, the preparation process thereof is simple, and the novel crystal forms have an excellent industrial implementation potential.

Abstract: A preparation method includes the following steps: Step (1): pressing and then drying body powder to form a green brick; Step (2): applying a ground coat on the surface of the green brick; Step (3): inkjet-printing a pattern on the surface of the green brick having the ground coat, and applying an isolation glaze; Step (4): applying a fully polished glaze on the surface of the green brick having the isolation glaze; and Step (5): drying, firing, and polishing the green brick having the fully polished glaze to obtain a hard wear-resistant polished glazed ceramic tile. The phase composition of the fired fully polished glaze is as follows: 10 to 20 percent by weight of corundum, 20 to 30 percent by weight of hyalophane, 0.5 to 1.0 percent by weight of hematite, and 50 to 68 percent by weight of amorphous phase.

Abstract: The present application provides a high-wear-resistance far-infrared ceramic polished glazed tile and preparation method therefor. The preparation method includes application of far-infrared overglaze, ink-jet printing, application of transparent far-infrared polished glaze and application of abrasion-resistant far-infrared polished glaze in sequence on a body, firing, and polishing. By adopting the far-infrared overglaze, the transparent far-infrared polished glaze and the abrasion-resistant far-infrared polished glaze in combination, the polished glaze tile can have a far-infrared function, high transparency, and high abrasion resistance.

Abstract: A dry granular ceramic tile from a wet slurry spraying process and a preparation method thereof, comprises: applying an overglaze on a green body, applying a pattern by ink-jet printing, applying a dry granular glaze by bell-shaped spraying, and sintering to obtain ceramic tiles. The dry granular glaze contains: by mass percentage, dry granular frit A: 15%, dry granular frit B: 12% to 15%, dry granular frit C: 13% to 17%. The softening temperature of the dry granular frit A is 1135° C. to 1175° C., 980° C. to 1050° C. for the dry granular frit B, and 1020° C. to 1127° C. for the dry granular frit C. The dry granular frits used in the present invention adopts a combination of dry granular frits with three different melting points, and using such a matching method, it is convenient for the effective adjustment of the brick shape and the firing temperature during production.

Abstract: A biosensor for detecting light signals emitted by a biological material is provided. The biosensor includes a light signal detector which comprises an array of light sensor pixels. The biosensor further includes a light signal filter layer disposed on a surface of the light sensor pixel array, a metal nanometer light focusing unit array layer, a grating array layer which comprises micro-gratings, and a biological material sample bearing area which comprises a plurality of sample gathering units. Each sample gathering unit aligns with one micro-grating and one metal nanometer light focusing unit in the vertical direction, and at least one of the light sensor pixels.

Abstract: A waveguide filter sensing unit is provided. The waveguide sensing unit includes an input waveguide for receiving an optical signal and an interference waveguide region for filtering the optical signal to remove noise therein. The waveguide sensing unit further includes a cladding layer wrapping around the input waveguide and the interference waveguide region; and an optical signal detector converting the filtered optical signal into an electrical signal. The width of the input waveguide is smaller than that of the interference waveguide region, and the refractive index of the cladding layer is smaller than that of the input waveguide and the interference waveguide region.

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor layer on the semiconductor substrate and having an exposed portion of a lower surface, a capping layer on the first semiconductor layer, a second semiconductor layer below the capping layer and having a side surface substantially in full contact with the capping layer, a cavity defined by the first semiconductor layer, the second semiconductor layer, and the capping layer, and a through-hole passing through the capping layer and the second semiconductor layer and extending to the cavity.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor layer on the semiconductor substrate and having an exposed portion of a lower surface, a capping layer on the first semiconductor layer, a second semiconductor layer below the capping layer and having a side surface substantially in full contact with the capping layer, a cavity defined by the first semiconductor layer, the second semiconductor layer, and the capping layer, and a through-hole passing through the capping layer and the second semiconductor layer and extending to the cavity.

Abstract: A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a semiconductor substrate, forming a first insulator layer on the first semiconductor layer, forming a patterned second semiconductor layer on the first insulator layer, the patterned second semiconductor layer having an actual thickness greater than a target thickness and exposing a portion of the first insulator layer; forming a second insulator layer as a spacer on the exposed portion of the first insulator layer, and performing an etching process on the patterned second semiconductor layer until the second semiconductor layer has the target thickness and concurrently removing the second insulator layer. The method can eliminate capillary etching of the spacer in a subsequent removal of the first insulator layer.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a substrate and a multilayer film having a step-shaped portion on the substrate; forming a protective layer covering the step-shaped portion of the multilayer film; forming a capping layer having a plurality of steps on the protective layer covering the semiconductor substrate; and removing at least one layer of the multilayer film to form a cavity that is defined by the capping layer and a remaining multilayer film that has the at least one layer removed. The thus formed semiconductor device does not have cracks in the steps of the capping layer when performing an etch process, thereby improving the performance of the semiconductor device.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.

Abstract: A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a semiconductor substrate, forming a first insulator layer on the first semiconductor layer, forming a patterned second semiconductor layer on the first insulator layer, the patterned second semiconductor layer having an actual thickness greater than a target thickness and exposing a portion of the first insulator layer; forming a second insulator layer as a spacer on the exposed portion of the first insulator layer, and performing an etching process on the patterned second semiconductor layer until the second semiconductor layer has the target thickness and concurrently removing the second insulator layer. The method can eliminate capillary etching of the spacer in a subsequent removal of the first insulator layer.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a substrate and a multilayer film having a step-shaped portion on the substrate; forming a protective layer covering the step-shaped portion of the multilayer film; forming a capping layer having a plurality of steps on the protective layer covering the semiconductor substrate; and removing at least one layer of the multilayer film to form a cavity that is defined by the capping layer and a remaining multilayer film that has the at least one layer removed. The thus formed semiconductor device does not have cracks in the steps of the capping layer when performing an etch process, thereby improving the performance of the semiconductor device.