Abstract: A spectrometer and a fabrication method thereof. The spectrometer includes: a first base substrate; a second base substrate opposite to the first base substrate; a detection channel between the first base substrate and the second base substrate; a quantum dot light emitting layer on a side of the first base substrate that is close to the second base substrate, and including a plurality of quantum dot light emitting units; a black matrix on the side of the first base substrate that is close to the second base substrate, and configured to separate the plurality of quantum dot light emitting units; and a sensor layer, including a plurality of sensors, the plurality of sensors being in one-to-one correspondence with the plurality of quantum dot light emitting units.

Abstract: The present disclosure discloses a cerium-added RE-T-B-M series sintered neodymium-iron-boron magnet, which relates to the technical field of neodymium-iron-boron permanent magnets, the structure of the magnet contains a RE2Fe14B main phase, a RE-rich phase, a REFe2 phase, and a sandwich grain boundary phase, wherein the sandwich grain boundary phase includes a RE-rich phase, a Fe-rich phase, and a REFe2 phase, and in the sandwich grain boundary phase, starting from the side near the grains of RE2Fe14B main phase, the first layer is the RE-rich phase, the second layer is the Fe-rich phase, and the third layer is the REFe2 phase, where RE includes cerium element and at least one of other rare earth elements, and the cerium element accounts for 3.0-15.0% by mass of the total elements, T is iron element and cobalt element, B is boron element, and M is Al, Cu, Ga, and Ti elements.

Abstract: A coating equipment for composite membrane without diffusion pump and its thickness gauge for both thick and thin coatings comprises a coating equipment for composite membrane without diffusion pump and a thickness gauge for both thick and thin coatings. A vacuum pump system of the coating equipment for composite membrane without diffusion pump is a roots-type pump system. Compared to conventional diffusion pumps, roots-type pump have advantages of low energy consumption, stable performance, good vacuum-pumping effect, short starting time, etc.

Abstract: A coating equipment for composite membrane without diffusion pump and its thickness gauge for both thick and thin coatings comprises a coating equipment for composite membrane without diffusion pump and a thickness gauge for both thick and thin coatings. A vacuum pump system of the coating equipment for composite membrane without diffusion pump is a roots-type pump system. Compared to conventional diffusion pumps, roots-type pump have advantages of low energy consumption, stable performance, good vacuum-pumping effect, short starting time, etc.

Abstract: A thermal expansive aluminum guide roller includes: an aluminum guide roller base, wherein the aluminum guide roller base is coated by an irony layer, the irony layer is coated by a hard metallic layer. Preferably, the hard metallic layer is a nickel layer or a titanium layer. Aluminum is utilized because of a small density. With the light weight, inertia is small and a rotation speed can be adjusted rapidly for quickly adapting to different conditions while coating. A production method of the thermal expansive aluminum guide roller includes: a step of preparing the aluminum guide roller base, wherein the production method further includes steps of: A) preparing an irony sleeve; B) inserting the aluminum guide roller base into the irony sleeve; C) forming the irony layer; and D) forming a coating layer, wherein the irony layer is coated by a hard metallic layer.

Abstract: A design structure embodied in a machine readable medium is provided for use in the design, manufacturing, and/or testing of Ics that include at least one SRAM cell. In particular, the present invention provides a design structure of an IC embodied in a machine readable medium, the IC including at least one SRAM cell with a gamma ratio of about 1 or greater. In the present invention, the gamma ratio is increased with degraded pFET device performance. Moreover, in the inventive IC, there is no stress liner boundary present in the SRAM region and ion variation for all devices is reduced as compared to that of a conventional SRAM structure. The present invention provides a design structure of an IC embodied in a machine readable medium, the IC comprising at least one static random access memory cell including at least one nFET and at least one pFET; and a continuous relaxed stressed liner located above and adjoining the at least one nFET and the at least one pFET.