Patents by Inventor Xiang Bo Kong

Xiang Bo Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF FORMING THE SAME
    Publication number: 20230345848
    Abstract: A resistive random access memory includes a first dielectric layer, a bottom electrode on the first dielectric layer, a variable-resistance layer on the bottom electrode and having a U-shaped cross-sectional profile, a top electrode on the variable-resistance layer and filling a recess in the variable-resistance layer, a second dielectric layer on the first dielectric layer and around the variable-resistance layer and the bottom electrode, and a spacer on the bottom electrode and inserting between the variable-resistance layer and the second dielectric layer.
    Type: Application
    Filed: July 5, 2023
    Publication date: October 26, 2023
    Applicant: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Dejin KONG, Jinjian OUYANG, Xiang Bo KONG, Wen Yi TAN
  • Resistive random access memory and method of forming the same
    Patent number: 11737381
    Abstract: A resistive random access memory includes a bottom electrode, a variable-resistance layer on the bottom electrode and having a U-shaped cross-sectional profile, and a top electrode on the variable-resistance layer and filling a recess in the variable-resistance layer.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: August 22, 2023
    Assignee: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Dejin Kong, Jinjian Ouyang, Xiang Bo Kong, Wen Yi Tan
  • RESISTIVE MEMORY DEVICE
    Publication number: 20220416159
    Abstract: A resistive memory device includes a stacked structure and a copper via conductor structure. The stacked structure includes a first electrode, a second electrode, and a variable resistance layer. The second electrode is disposed above the first electrode in a vertical direction, and the variable resistance layer is disposed between the first electrode and the second electrode in the vertical direction. The copper via conductor structure is disposed under the stacked structure. The first electrode includes a tantalum nitride layer directly connected with the copper via conductor structure.
    Type: Application
    Filed: July 29, 2021
    Publication date: December 29, 2022
    Applicant: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Shuzhi Zou, DEJIN KONG, Xiang Bo Kong, Chin-Chun Huang, WEN YI TAN
  • RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF FORMING THE SAME
    Publication number: 20220336740
    Abstract: A resistive random access memory includes a bottom electrode, a variable-resistance layer on the bottom electrode and having a U-shaped cross-sectional profile, and a top electrode on the variable-resistance layer and filling a recess in the variable-resistance layer.
    Type: Application
    Filed: May 21, 2021
    Publication date: October 20, 2022
    Inventors: DEJIN KONG, JINJIAN OUYANG, Xiang Bo Kong, WEN YI TAN