Abstract: A method controls power of a baseboard management controller (BMC). A power control signal of the BMC is generated for powering up or powering down the BMC. An enabling signal is generated according to the power control signal. A power supply device is directed to output one or more voltages to the BMC.

Abstract: A method for etching a thin film and fabricating a semiconductor device includes etching the thin film on a substrate, while monitoring the removal of an endpoint detection layer remotely located from the substrate, such that precise control of the thin film etching is provided by monitoring the removal of the endpoint detection layer. The endpoint detection layer is formed on a surface of an etching apparatus that is exposed to the same etching conditions as the thin film to be etched. The etching of the thin film is stopped when a predetermined amount of the endpoint detection layer has removed from the surface of the etching apparatus.

Abstract: A memory cell for an electrically writeable and erasable memory medium as well as a memory medium thereof is provided. The memory cell comprises a data recording element, the data recording element has a plurality of multiple-layer structure disposed one on top of another; each the multiple-layer structure comprising a plurality of sequentially disposed individual layers. At least one of the plurality of individual layers is capable of changing phase between a crystalline state and an amorphous state in response to an electrical pulse, one of the plurality of individual layers having at least one atomic element which is absent from other one of the plurality of individual layers, and the plurality of multiple-layer structure is of a superlattice-like structure to lower a heat diffusion out of the data recording element to shorten a phase change time of the respective individual layers.

Abstract: A driving circuit comprising a reference-voltage circuit, an amplifier, an adjusting circuit, and a current-setting circuit. The reference-voltage circuit is used for generating a reference voltage. The amplifier comprises a first input terminal used for receiving the reference voltage, a second input terminal used for receiving feedback voltage from a load, and an output terminal used for outputting an output current to the load. The adjusting circuit is used for adjusting a voltage of the load when a resistance of the load changes. The current-setting circuit is used for setting a value of the output current based on the feedback voltage.

Abstract: A content-providing entity receives a relatively short text from a user and attempts to determine, automatically, based on that short text (and on other available clues), a language that the user can read and understand. The content-providing entity may then provide, to the user, documents that are written in the determined language. The content-providing entity may determine a language of the input text based on several factors in combination: (a) the service provider's “market,” which is determined based on at least a portion of the URL of the Internet site to which the user directed his browser; (b) the user's “region,” which is determined based on the source Internet Protocol (IP) address of the IP packets that the user sends to the Internet site; (c) the “script” in which the short user-entered text is written; and (d) a statistical analysis of the frequency of the characters present in the short user-entered text.

Abstract: Embodiments of methods, systems or devices for enabling targeted advertising of goods and services are disclosed.

Abstract: A method for etching a thin film and fabricating a semiconductor device includes etching the thin film on a substrate, while monitoring the removal of an endpoint detection layer remotely located from the substrate, such that precise control of the thin film etching is provided by monitoring the removal of the endpoint detection layer. The endpoint detection layer is formed on a surface of an etching apparatus that is exposed to the same etching conditions as the thin film to be etched. The etching of the thin film is stopped when a predetermined amount of the endpoint detection layer has removed from the surface of the etching apparatus.

Abstract: A driving circuit comprising a reference-voltage circuit, an amplifier, an adjusting circuit, and a current-setting circuit. The reference-voltage circuit is used for generating a reference voltage. The amplifier comprises a first input terminal used for receiving the reference voltage, a second input terminal used for receiving feedback voltage from a load, and an output terminal used for outputting an output current to the load. The adjusting circuit is used for adjusting a voltage of the load when a resistance of the load changes. The current-setting circuit is used for setting a value of the output current based on the feedback voltage.

Abstract: A memory cell for an electrically writeable and erasable memory medium as well as a memory medium thereof is provided. The memory cell comprises a data recording element, the data recording element has a plurality of multiple-layer structure disposed one on top of another, each the multiple-layer structure comprising a plurality of sequentially disposed individual layers. At least one of the plurality of individual layers is capable of changing phase between a crystalline state and an amorphous state in response to an electrical pulse, one of the plurality of individual layers having at least one atomic element which is absent from other one of the plurality of individual layers, and the plurality of multiple-layer structure is of a superlattice-like structure to lower a heat diffusion out of the data recording element to shorten a phase change time of the respective individual layers.