Patents by Inventor Xiang-Zhu XIE

Xiang-Zhu XIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING SINGLE-CRYSTAL GROUP-III NITRIDE
    Publication number: 20200232119
    Abstract: A method of forming a single-crystal group-III nitride is provided in the present invention. In some embodiments, the method includes the following steps. First, a molybdenum disulfide (MoS2) is formed on a remote substrate. Then, the MoS2 is transferred onto a substrate. Next, a sputtering operation is performed to epitaxially grow a single-crystal group-III nitride layer on the MoS2, so as to form the single-crystal group-III nitride layer on the substrate such as a Si substrate or a flexible substrate.
    Type: Application
    Filed: July 24, 2019
    Publication date: July 23, 2020
    Inventors: Jie-He CHEN, Yu-Kai HSU, Xiang-Zhu XIE, Min-Jie LIOU, Hui-Ling KAO, Wen-Hao CHANG, Jyh-Shin CHEN, Po-Chun KUO, Li-Syuan LU, Han YEH