Abstract: Aspects of the present disclosure configure a system component, such as a memory sub-system controller, to dynamically allocate blocks from a free block pool. The controller generates a free block pool that includes a collection of full blocks and a collection of partial good blocks (PGBs) of a set of memory components, a size of a full block in the collection of full blocks corresponding to a combination of two or more PGBs of the collection of PGBs. The controller receives a request to write data. The controller allocates an individual full block from the collection of full blocks or an individual PGB from the collection of PGBs based on determining whether the request to write the data has been received from the host device or the controller of the memory sub-system.

Abstract: A method includes writing, to a first data structure, indices corresponding to address locations of a logical-to-physical (L2P) data structure that maps a plurality of logical block addresses (LBAs) associated with the L2P data structure, initiating performance of a media management operation involving one or more memory blocks in which data associated with the LBAs is written, and refraining from rewriting particular entries in the L2P table that correspond to LBAs whose index in the first data structure is a particular value during performance of the media management operation.

Abstract: Methods, systems, and devices for redundant array management techniques are described. A memory system may include a volatile memory device, a non-volatile memory device, and one or more redundant arrays of independent nodes. The memory system may include a first redundant array controller and a second redundant array controller of a redundant array of independent nodes. The memory system may receive a write command associated with writing data to a type of memory cell. Based on the type of memory cell, the memory system may generate parity data corresponding to the data using one or both of the first redundant array controller and the second redundant array controller. In some examples, the first redundant array controller may be configured to generate parity data associated with a first type of failure and the second redundant array controller may be configured to generate parity data associated with a second type of failure.

Abstract: Provided are template mark detection method and template position correction method based on single camera, including: performing image collection on mark on template by single camera, and obtaining binary image after preprocessing; performing corner detection of jagged edges on binary image to obtain corner set of jagged edges; performing edge detection and line detection sequentially on binary image to obtain set of edge line segments from coarse detection; traversing such set, and judging and retaining collinear line segments, to obtain set of collinear line segments from coarse detection; traversing corner set of jagged edges, for point-line collinearity judgment with line segments in set of collinear line segments from coarse detection, to obtain set of point-line from fine detection; and performing linear fitting on set of point-line from fine detection, and calculating an inclination angle of each straight line through an arctan function, thus completing detection of mark.

Abstract: A method can comprise receiving data corresponding to a sequence of write commands to write the data to a memory array comprising a plurality of strings of memory cells. Each string of the plurality of strings comprises: a first group of memory cells coupled to a first group of access lines and corresponding to a first erase block having a first programming characteristic; and a second group of memory cells coupled to a second group of access lines and corresponding to a second erase block having a second programming characteristic.

Abstract: A method includes forming at least a portion of a first superblock using a first subset of blocks from at least one memory die of a memory sub-system and forming at least a portion of a second superblock using a second subset of blocks from the at least one memory die of the memory sub-system.

Abstract: A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm is provided, including: obtaining first mask data according to a target pattern, and constructing a level set function; performing forward simulation, so as to obtain an electric field distribution on a photoresist and a first structural vector electric field distribution on a mask; obtaining a photoresist pattern according to the electric field distribution on the photoresist, and calculating an imaging error between the photoresist pattern and the target pattern; performing accompanying simulation, so as to obtain a second structural vector electric field distribution; obtaining a level set gradient by means of performing calculation according to the first structural vector electric field distribution, the second structural vector electric field distribution and the imaging error; and evolving the level set function, performing update to obtain second mask data, and performing iterative calculation u

Abstract: A method for preparing a metal-dielectric strip array based super-resolution lens includes: performing lithography on a first material layer on a first substrate to obtain a grating structure; alternately depositing second and third material layers until the grating structure is filled up, to obtain a first transition structure, one of the second and third material layers being of metal, and the other one being of dielectric; performing planarization on the first transition structure at least reach the top of the grating structure, to obtain a second transition structure; adhering an upper surface of the second transition structure to a second substrate; removing the first substrate, and performing overturning to make the second transition structure be on the second substrate to obtain a third transition structure; and performing planarization again to at least reach the top of finally deposited second or third material layer, to obtain the super-resolution lens.

Abstract: Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Abstract: An apparatus can include a block program erase count (PEC) component. The block PEC component can monitor a quantity of program erase counts (PECs) for each particular type of block of a non-volatile memory array. The block PEC component can further determine which block of the superblock to write host data to next based on the quantity of PECs. The block PEC component can further write host data to the determined block.

Abstract: A photoresist composition is provided, including a chemical amplification matrix, wherein the chemical amplification matrix includes a polymer resin, a photoacid generator and a solvent; and a dissolution inhibitor, which is a small molecular material containing a diazo naphthoquinone structure. A method for using the photoresist composition is further provided.

Abstract: The present disclosure provides a template mark detection method and a template position correction method based on a single camera, including: S1, carrying out image collection on a mark on a template by a single camera, and obtaining a binary image after preprocessing; S2, carrying out corner detection of jagged edges on the binary image to obtain a corner set of jagged edges; S3, performing edge detection and line detection in sequence on the binary image to obtain a set of edge line segments from coarse detection; S4, traversing the set of edge line segments from coarse detection, and judging and retaining collinear line segments therein, to obtain a set of collinear line segments from coarse detection; S5, traversing the corner set of jagged edges, for point-line collinearity judgment with line segments in the set of collinear line segments from coarse detection, to obtain a set of point-line from fine detection; and S6, carrying out linear fitting on the set of point-line from fine detection, and calcul

Abstract: Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Abstract: Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.

Abstract: A level set algorithm based reverse optical proximity effect correction method for super-resolution lithography.

Abstract: The present disclosure provides a mask topology optimization method for surface plasmon near-field photolithography, comprising: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: A photolithography method includes: sequentially preparing a functional film layer, a reflective auxiliary imaging film layer and a first photoresist layer which are stacked, on a photolithography substrate; performing photolithography on the first photoresist layer to obtain a first photolithography structure; etching the reflective auxiliary imaging film layer with the first photolithography structure as a masking layer; on the pattern of the reflective auxiliary imaging film layer, sequentially preparing a second photoresist layer and a transmissive auxiliary imaging film layer which stacked; performing surface plasmon photolithography with the pattern of the reflective auxiliary imaging film layer as a mask, removing the transmissive auxiliary imaging film layer, and then developing the second photoresist layer, to obtain a second photolithography structure; and etching the functional film layer, with the second photolithography structure as a masking layer, to obtain a third photolithography structure.

Abstract: A method for preparing a super-resolution lens based on a metal-dielectric strip array, the method comprising: performing lithography on a first material layer (3) on a first substrate (1) to obtain a grating structure (S1); alternately depositing a second material layer (5) and a third material layer (6) until the grating structure is filled up and becomes even, so as to obtain a first transition structure, wherein one of the second material layer (5) and the third material layer (6) is metal, and the other one is dielectrics (S2); performing planarization on the first transition structure, wherein the planarization depth at least reaches the top of the grating structure, so as to obtain a second transition structure (S3); curing an upper surface of the second transition structure and a second substrate (9) (S4); removing the first substrate (1), so as to transfer the second transition structure onto the second substrate (9) to obtain a third transition structure (S5); and performing planarization again, whe

Abstract: The present disclosure provides illumination field non-uniformity detection system, detection method, correction method, and device provided.