Abstract: The present disclosure provides a potassium dihydrogen phosphate (KDP) frequency-doubling crystal structure, including a crystal fixing structure, a KDP crystal, a ? polarization tube, and a ? polarization tube; where a ?-polarized laser with a central wavelength of 800 nm enters the KDP crystal through the ? polarization tube, and the KDP crystal converts the ?-polarized laser with a central wavelength of 800 nm into a ?-polarized laser with a central wavelength of 400 nm by frequency doubling and then outputs the ?-polarized laser from the ? polarization tube. Close end bevels of the ? polarization tube and the ? polarization tube are designed into a Brewster angle. The KDP crystal is placed in a vacuum-sealed cavity formed by the ? polarization tube, the ? polarization tube, and the crystal fixing structure, which eliminates a complicated process of crystal coating and prevents the KDP crystal from deliquescing in air.

Abstract: The present invention provides a method and apparatus for precleaning a patterned substrate with a plasma comprising a mixture of argon, helium, and hydrogen. Addition of helium to the gas mixture of argon and hydrogen surprisingly increases the etch rate in comparison to argon/hydrogen mixtures. Etch rates are improved for argon concentrations below about 75% by volume. RF power is capacitively and inductively coupled to the plasma to enhance control of the etch properties. Argon, helium, and hydrogen can be provided as separate gases or as mixtures.

Abstract: The present invention generally provides a method for improving fill and electrical performance of metals deposited on patterned dielectric layers. Apertures such as vias and trenches in the patterned dielectric layer are etched to enhance filling and then cleaned in the same chamber to reduce metal oxides within the aperture.

Abstract: The present invention generally provides a method for stabilizing a halogen-doped silicon oxide film, particularly a fluorinated silicon oxide film. The invention also provides a method for preventing loosely bonded halogen atoms from reacting with components of the barrier layer during subsequent processing of the substrate. The invention provides a hydrogen plasma treatment of the halogen-doped silicon oxide film without subjecting the substrate to a heated environment that may damage the substrate and the structures formed on the substrate. The invention also improves the adhesion strength between the halogen-doped silicon oxide film and the barrier layer. Furthermore, the hydrogen plasma treatment can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, chemical vapor deposition chambers, etch chambers and other plasma processing chambers.

Abstract: The present invention generally provides a method for stabilizing a halogen-doped silicon oxide film, particularly a fluorinated silicon oxide film. The invention also provides a method for preventing loosely bonded halogen atoms from reacting with components of the barrier layer during subsequent processing of the substrate. The invention provides a hydrogen plasma treatment of the halogen-doped silicon oxide film without subjecting the substrate to a heated environment that may damage the substrate and the structures formed on the substrate. The invention also improves the adhesion strength between the halogen-doped silicon oxide film and the barrier layer. Furthermore, the hydrogen plasma treatment can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, chemical vapor deposition chambers, etch chambers and other plasma processing chambers.

Abstract: Embodiments include a method for depositing material onto a workpiece in a sputtering chamber. The method includes sputtering a target and a coil in said sputtering chamber. The coil may have a preformed multilayer structure formed outside of the sputtering chamber. The outer layer of the coil may act as a secondary source of deposition material. The multilayer structure may be formed with an inner region or a base metal and an outer layer of a sputtering metal. The outer layer may be formed using a process such as plasma spraying, arc spraying, flame spraying, ion plating, chemical vapor deposition and electroplating.