Abstract: A solar cell, a textured surface structure and a method for preparing the same are provided. The textured surface structure is formed on a surface of a silicon wafer, and the surface has a grid line covered area and a light-receiving exposure area. The textured surface structure includes a first textured surface formed on the grid line covered area, and a second textured surface formed on the light-receiving exposure area. The texture size of the first textured surface is larger than the texture size of the second textured surface.

Abstract: A non-refrigerated tunable semiconductor laser based on a multi-wavelength array includes a thermistor, a tunable laser array, a multiplexing structure, an optical amplifier, an optical splitter, an optical detector, and a main controller. The tunable laser array include a plurality of laser units with different wavelengths, and the tunable laser array is connected to the optical splitter and the main controller through the multiplexing structure and the optical amplifier in sequence. When the laser is influenced by the external environment temperature, the value of the influence caused by the external environment temperature is calculated, and drive currents of the tunable laser array and the optical amplifier are adjusted and controlled respectively according to the calculation result, so as to achieve the purpose that parameters of the final output light are consistent with parameters of the theoretical light.

Abstract: A tunable distributed feedback (DFB) semiconductor laser based on a series mode or a series and parallel hybrid mode. A grating structure of the laser is a sampling Bragg grating based on the reconstruction-equivalent chirp technology. DFB lasers with different operating wavelengths based on the reconstruction-equivalent chirp technology are integrated together by a sampling series combination mode or a series/parallel hybrid mode, one of the lasers is selected to operate via a current, and the operating wavelength of the laser can be controlled by adjusting the current or the temperature, so that the continuous tuning of the operating wavelengths of the lasers can be realized. Various wavelength signals in parallel channels are coupled and then output from the same waveguide. An electrical isolation area (1-11) is adopted between lasers connected in series or lasers connected in series and connected in parallel to reduce the crosstalk between adjacent lasers.

Abstract: A tunable distributed feedback (DFB) semiconductor laser based on a series mode or a series and parallel hybrid mode. A grating structure of the laser is a sampling Bragg grating based on the reconstruction-equivalent chirp technology. DFB lasers with different operating wavelengths based on the reconstruction-equivalent chirp technology are integrated together by a sampling series combination mode or a series/parallel hybrid mode, one of the lasers is selected to operate via a current, and the operating wavelength of the laser can be controlled by adjusting the current or the temperature, so that the continuous tuning of the operating wavelengths of the lasers can be realized. Various wavelength signals in parallel channels are coupled and then output from the same waveguide. An electrical isolation area (1-11) is adopted between lasers connected in series or lasers connected in series and connected in parallel to reduce the crosstalk between adjacent lasers.

Abstract: A method for manufacturing a multi-dimensional target waveguide grating and volume grating with micro-structure quasi-phase-matching. An ordinary waveguide grating is used as a seed grating, and on this basis, a two-dimensional or three-dimensional sampling structure modulated with a refractive index, that is, a sampling grating, is formed. The sampling grating comprises multiple shadow gratings, and one of the shadow gratings is selected as a target equivalent grating. A sampled grating comprises Fourier components in many orders, that is, shadow gratings, a corresponding grating wave vector is [Formula 1], and the grating profile of all the shadow gratings changes with the sampling structure [Formula 2]. In a case where a seed grating wave vector [Formula 3] and a required two-dimensional or three-dimensional grating wave vector do not match, a certain Fourier periodic structure component of the Fourier components of the sampling structure is used to compensate for the wave vector mismatch.

Abstract: A method for manufacturing a multi-dimensional target waveguide grating and volume grating with micro-structure quasi-phase-matching. An ordinary waveguide grating is used as a seed grating, and on this basis, a two-dimensional or three-dimensional sampling structure modulated with a refractive index, that is, a sampling grating, is formed. The sampling grating comprises multiple shadow gratings, and one of the shadow gratings is selected as a target equivalent grating. A sampled grating comprises Fourier components in many orders, that is, shadow gratings, a corresponding grating wave vector is [Formula 1], and the grating profile of all the shadow gratings changes with the sampling structure [Formula 2]. In a case where a seed grating wave vector [Formula 3] and a required two-dimensional or three-dimensional grating wave vector do not match, a certain Fourier periodic structure component of the Fourier components of the sampling structure is used to compensate for the wave vector mismatch.

Abstract: Using sampled Bragg grating structure, the present invention proposes a distributed feedback (DFB) semiconductor laser based on reconstruction-equivalent-chirp technology. Namely, the Bragg grating in the said DFB semiconductor laser cavity is a sampled Bragg grating, in which there is an equivalent grating corresponding to the original ordinary DFB grating as feedback for lasing. The laser wavelength of the said semiconductor laser located within the operation bandwidth of the said equivalent grating. The said equivalent grating is designed and fabricated using REC technology and has equivalent chirps, one equivalent phase shift or multiple equivalent phase shifts. The said sampled Bragg grating has multiple ghost gratings and the wavelength spacing between neighboring ghost gratings is inversely proportional to the sampling period and the effective refractive index of the said semiconductor laser.

Abstract: Using sampled Bragg grating structure, the present invention proposes a distributed feedback (DFB) semiconductor laser based on reconstruction-equivalent-chirp technology. Namely, the Bragg grating in the said DFB semiconductor laser cavity is a sampled Bragg grating, in which there is an equivalent grating corresponding to the original ordinary DFB grating as feedback for lasing. The laser wavelength of the said semiconductor laser located within the operation bandwidth of the said equivalent grating. The said equivalent grating is designed and fabricated using REC technology and has equivalent chirps, one equivalent phase shift or multiple equivalent phase shifts. The said sampled Bragg grating has multiple ghost gratings and the wavelength spacing between neighboring ghost gratings is inversely proportional to the sampling period and the effective refractive index of the said semiconductor laser.