Abstract: The present application relates to a garbage collection method and a storage device for reducing write amplification. A method for selecting a data block to be collected in garbage collection, including: obtaining, according to a first selection policy, a first data block to be collected; determining, according to a first rejection policy, whether to refuse to collect the first data block to be collected; and if according to the first rejection policy, rejection to collect of the first data block to be collected is determined, not performing garbage collection on the first data block to be collected.

Abstract: The present application relates to a garbage collection method and a storage device for reducing write amplification. A method for selecting a data block to be collected in garbage collection, including: obtaining, according to a first selection policy, a first data block to be collected; determining, according to a first rejection policy, whether to refuse to collect the first data block to be collected; and if according to the first rejection policy, rejection to collect of the first data block to be collected is determined, not performing garbage collection on the first data block to be collected.

Abstract: The present application relates to a garbage collection method and a storage device for reducing write amplification. A method for selecting a data block to be collected in garbage collection, including: obtaining, according to a first selection policy, a first data block to be collected; determining, according to a first rejection policy, whether to refuse to collect the first data block to be collected; and if according to the first rejection policy, rejection to collect of the first data block to be collected is determined, not performing garbage collection on the first data block to be collected.

Abstract: A method for transmitting data between an information processing device and a storage device, in which the storage device includes a buffer memory and flash chips, includes: receiving a first write request including data to be written and an address used for the flash chip of the storage device; allocating a first memory unit in the information processing device for the first write request; sending a write command including data, the address used for the flash chip of the storage device and address used for the buffer memory, to the storage device, in which the address used for the buffer memory corresponds to the first memory unit; receiving a message indicating the performing of the write command by the storage device has been completed, from the storage device; and releasing the first memory unit.

Abstract: A method of controlling interrupts in the process of data transmission used for transmitting data between an information processing device and a storage device having a flash memory includes: receiving a write request sent by the information processing device using the storage device; in response to the write request, writing data to the flash memory; sending a message to the information processing device, to indicate completion of the write request, and calculating the number of times of sending messages to the information processing device within the predetermined time interval; in which, if the number is larger than the predetermined threshold, stopping the sending messages to the information processing device.

Abstract: A storage device includes a buffer memory and a flash memory, which can be connected with the host computer communicably. A method for writing data into the storage device includes: receiving a first write command from the host, the first write command including the data to be written, the address for the flash memory and the address or the buffer memory; based on the address for the buffer memory, writing the data to be written to the buffer memory; based on the address for the flash memory, writing the data to be written to the flash memory.

Abstract: A method of controlling interrupts in the process of data transmission used for transmitting data between an information processing device and a storage device having a flash memory includes: receiving a write request sent by the information processing device using the storage device; in response to the write request, writing data to the flash memory; sending a message to the information processing device, to indicate completion of the write request, and calculating the number of times of sending messages to the information processing device within the predetermined time interval; in which, if the number is larger than the predetermined threshold, stopping the sending messages to the information processing device.

Abstract: A storage device includes a buffer memory and a flash memory, which can be connected with the host computer communicably. A method for writing data into the storage device includes: receiving a first write command from the host, the first write command including the data to be written, the address for the flash memory and the address or the buffer memory; based on the address for the buffer memory, writing the data to be written to the buffer memory; based on the address for the flash memory, writing the data to be written to the flash memory.

Abstract: A method for transmitting data between an information processing device and a storage device, in which the storage device includes a buffer memory and flash chips, includes: receiving a first write request including data to be written and an address used for the flash chip of the storage device; allocating a first memory unit in the information processing device for the first write request; sending a write command including data, the address used for the flash chip of the storage device and address used for the buffer memory, to the storage device, in which the address used for the buffer memory corresponds to the first memory unit; receiving a message indicating the performing of the write command by the storage device has been completed, from the storage device; and releasing the first memory unit.

Abstract: Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to create ion beams of various incidence angles. These ion beams may, in some cases, form a focused ion beam. The wide range of incidence angles allows the material to be deposited amorphously. The porosity and pore size can be varied by changing various process parameters. In other embodiments, porous oxides can be created by adding oxygen to previously created layers of porous material.

Abstract: ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be preformed using sequential implants, implants of the first species and second species that are at least partially simultaneous, or a molecular species comprising an atom selected from Group III and an atom selected from Group VII. The implants may be performed at an elevated temperature in one instance between 70° C. and 800° C.