Abstract: A gas and moisture permeation barrier stack deposited by both sputtering and atomic layer deposition techniques. In one embodiment, the barrier stack comprises a bottom barrier layer deposited on a substrate by sputtering and a top barrier layer deposited on the sputtered layer by atomic layer deposition. In one embodiment, the sputtered barrier layer has a water vapor transmission rate of about 10?5 gm/m2·day or lower, and the top barrier layer improves the water vapor transmission rate of the resulting two-layer barrier stack to about 10?6 gm/m2·day or lower.

Abstract: An encapsulated device achieves good water vapor transmission rates while reducing the amount of time needed in an inert environment, and thereby reducing the size of the deposition tool used to encapsulate the device. The encapsulated device includes a first barrier layer deposited directly on the device, and a first adhesive and first laminate on the first barrier layer. The laminate comprises a polymeric substrate and a second barrier layer on the substrate. The first barrier layer has a water vapor transmission rate suitable to allow lamination of the laminate on the first barrier layer in a non-inert environment. A method of making an encapsulated device comprises depositing a first barrier layer on the device in an inert environment, applying an adhesive on the first barrier layer in a non-inert environment, and applying a first laminate on the first adhesive in the non-inert environment.

Abstract: An encapsulated device includes a barrier laminate on the device, and adhesive between the barrier laminate and the device, and an edge sealing member at an edge of the encapsulated device. The edge sealing member may be embedded in the adhesive, may enclose the adhesive between the barrier laminate and the device, or may cover an edge portion of the barrier laminate and an edge portion of the adhesive. A method of making an encapsulated device includes forming an edge sealing member by attaching it to an edge of the device, depositing it adjacent the edge of the device, or covering an edge of an encapsulated volume defined by the edge of the device with the edge sealing member. The method further includes applying an adhesive on the device, and applying a barrier laminate on the adhesive.

Abstract: An encapsulated device achieves good water vapor transmission rates while reducing the amount of time needed in an inert environment, and thereby reducing the size of the deposition tool used to encapsulate the device. The encapsulated device includes a first barrier layer deposited directly on the device, and a first adhesive and first laminate on the first barrier layer. The laminate comprises a polymeric substrate and a second barrier layer on the substrate. The first barrier layer has a water vapor transmission rate suitable to allow lamination of the laminate on the first barrier layer in a non-inert environment. A method of making an encapsulated device comprises depositing a first barrier layer on the device in an inert environment, applying an adhesive on the first barrier layer in a non-inert environment, and applying a first laminate on the first adhesive in the non-inert environment.

Abstract: Barrier stacks according to embodiments of the present invention achieve good water vapor transmission rates with a reduced number of dyads (i.e., polymer layer/oxide layer couple). In some embodiments, the barrier stack includes one or more dyads comprising a first polymer decoupling layer and a second barrier layer on the first layer. An intervening tie layer is deposited between the first and second layers of at least one of the dyads. The intervening tie layer includes an inorganic oxide layer deposited between the polymer decoupling layer and barrier layer of the dyad. The barrier layer includes a silicon nitride layer deposited by an evaporative deposition technique such as chemical vapor deposition (CVD), for example plasma enhanced chemical vapor deposition (PECVD). The barrier stack including the intervening tie layer has a water vapor transmission rate that is lower than a water vapor transmission rate of a barrier stack not including the intervening tie layer.

Abstract: Barrier stacks according to embodiments of the present invention achieve good water vapor transmission rates with a reduced number of dyads (i.e., polymer layer/barrier layer couple). In some embodiments, the barrier stack includes one or more dyads comprising a first polymer decoupling layer and a hybrid barrier layer on the first layer. The hybrid barrier layer includes an inner oxide barrier layer and an outer silicon nitride barrier layer. The inner oxide barrier layer is deposited between the first layer and the outer silicon nitride layer of at least one of the dyads. The outer silicon nitride barrier layer is deposited by an evaporative deposition technique such as chemical vapor deposition (CVD), for example plasma enhanced chemical vapor deposition (PECVD). The barrier stack including the inner oxide barrier layer has a water vapor transmission rate that is lower than a water vapor transmission rate of a barrier stack not including the inner oxide barrier layer.

Abstract: A gas and moisture permeation barrier stack deposited by both sputtering and atomic layer deposition techniques. In one embodiment, the barrier stack comprises a bottom barrier layer deposited on a substrate by sputtering and a top barrier layer deposited on the sputtered layer by atomic layer deposition. In one embodiment, the sputtered barrier layer has a water vapor transmission rate of about 10?5 gm/m2·day or lower, and the top barrier layer improves the water vapor transmission rate of the resulting two-layer barrier stack to about 10?6 gm/m2·day or lower.

Abstract: A barrier stack for protecting devices from the permeation of moisture and gases includes a first layer acting as a planarization, decoupling, and/or smoothing layer, a second layer acting as a plasma resistant protective layer over the first layer, and a third layer acting as a barrier layer over the second layer. The first layer includes a polymeric or organic material. The second layer includes an inorganic material or polymeric material. The third layer includes an inorganic material and has a different density and/or refractive index than the second layer. The barrier stack may further include a fourth layer acting as a tie layer between the first layer and the substrate.

Abstract: Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.

Abstract: Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.

Abstract: In an arrangement for coupling an rf-SQUID to a superconducting tank circuit and to a base plate, in which the tank circuit and the rf-SQUID form a coplanar structure and the tank circuit has a slit, the base plate (10) is configured as an outer loop (10a) coplanar to the rf-SQUID (2) and the tank circuit (1) and has a slit (11), and the tank circuit (1) comprises an inner loop (1a) in which the slit (4) is embodied, whereby the orientation of the slits (4, 11) of the inner loop (1a) and the outer loop (10a) relative to one another determines the resonance frequency fr.