Patents by Inventor Xiangju Jin

Xiangju Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Switch circuit, mixer, and electronic device
    Patent number: 12113481
    Abstract: A switch circuit, a mixer, and an electronic device, where the switch circuit includes a first metal oxide semiconductor (MOS) transistor, a second MOS transistor, a third MOS transistor, and a fourth MOS transistor, both a gate of the first MOS transistor and a gate of the fourth MOS transistor are connected to a first port, and both a gate of the second MOS transistor and a gate of the third MOS transistor are connected to a second port; and a lead between the gate of the first MOS transistor and the first port, a lead between the gate of the second MOS transistor and the second port, a lead between the gate of the third MOS transistor and the second port, and a lead between the gate of the fourth MOS transistor and the first port all have an equal length. In this way, linearity is relatively high.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: October 8, 2024
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Yongli Zhou, Xiangju Jin, Yan Lai
  • Switch Circuit, Mixer, and Electronic Device
    Publication number: 20220052645
    Abstract: A switch circuit, a mixer, and an electronic device, where the switch circuit includes a first metal oxide semiconductor (MOS) transistor, a second MOS transistor, a third MOS transistor, and a fourth MOS transistor, both a gate of the first MOS transistor and a gate of the fourth MOS transistor are connected to a first port, and both a gate of the second MOS transistor and a gate of the third MOS transistor are connected to a second port; and a lead between the gate of the first MOS transistor and the first port, a lead between the gate of the second MOS transistor and the second port, a lead between the gate of the third MOS transistor and the second port, and a lead between the gate of the fourth MOS transistor and the first port all have an equal length. In this way, linearity is relatively high.
    Type: Application
    Filed: October 29, 2021
    Publication date: February 17, 2022
    Inventors: Yongli Zhou, Xiangju Jin, Yan Lai