Abstract: A multi-layer circuit board, successively constituted by surface sticking layer, single-layer circuit board, middle sticking layer, single-layer circuit board, surface sticking layer, said multi-layer circuit board is provided with a hole, a hole wall of said hole is formed with conductive seed layer, and partial outer surface of said surface sticking layer is formed with a circuit pattern layer of conductive seed layer, wherein said conductive seed layer comprises a ion implantation layer implanting below the hole wall of said hole and below partial outer surface of said surface sticking layer.

Abstract: A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.

Abstract: A multi-layer circuit board, successively constituted by surface sticking layer, single-layer circuit board, middle sticking layer, single-layer circuit board, surface sticking layer, said multi-layer circuit board is provided with a hole, a hole wall of said hole is formed with conductive seed layer, and partial outer surface of said surface sticking layer is formed with a circuit pattern layer of conductive seed layer, wherein said conductive seed layer comprises a ion implantation layer implanting below the hole wall of said hole and below partial outer surface of said surface sticking layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board comprises the following steps: drilling a hole on a substrate, the hole comprising a blind hole and/or a through hole; on a surface of the substrate, forming a photoresist layer having a circuit negative image; forming a conductive seed layer on the surface of the substrate and a hole wall of the hole; removing the photoresist layer, and forming a circuit pattern on the surface of the substrate, wherein forming a conductive seed layer comprises implanting a conductive material below the surface of the substrate and below the hole wall of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board comprises the following steps: drilling a hole on a substrate, the hole comprising a blind hole and/or a through hole; on a surface of the substrate, forming a photoresist layer having a circuit negative image; forming a conductive seed layer on the surface of the substrate and a hole wall of the hole; removing the photoresist layer, and forming a circuit pattern on the surface of the substrate, wherein forming a conductive seed layer comprises implanting a conductive material below the surface of the substrate and below the hole wall of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board comprises the following steps: drilling a hole on a substrate, the hole comprising a blind hole and/or a through hole; on a surface of the substrate, forming a photoresist layer having a circuit negative image; forming a conductive seed layer on the surface of the substrate and a hole wall of the hole; removing the photoresist layer, and forming a circuit pattern on the surface of the substrate, wherein forming a conductive seed layer comprises implanting a conductive material below the surface of the substrate and below the hole wall of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board comprises the following steps: drilling a hole on a substrate, the hole comprising a blind hole and/or a through hole; on a surface of the substrate, forming a photoresist layer having a circuit negative image; forming a conductive seed layer on the surface of the substrate and a hole wall of the hole; removing the photoresist layer, and forming a circuit pattern on the surface of the substrate, wherein forming a conductive seed layer comprises implanting a conductive material below the surface of the substrate and below the hole wall of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board (10) comprises the following steps: drilling a hole on a substrate (11), the hole comprising a blind hole and/or a through hole (S1); on a surface (12) of the substrate, forming a photoresist layer having a circuit negative image (S2); forming a conductive seed layer on the surface (12) of the substrate and a hole wall (19) of the hole (S3); removing the photoresist layer, and forming a circuit pattern on the surface (12) of the substrate (S4), wherein Step S3 comprises implanting a conductive material below the surface (12) of the substrate and below the hole wall (19) of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board (10) comprises the following steps: drilling a hole on a substrate (11), the hole comprising a blind hole and/or a through hole (S1); on a surface (12) of the substrate, forming a photoresist layer having a circuit negative image (S2); forming a conductive seed layer on the surface (12) of the substrate and a hole wall (19) of the hole (S3); removing the photoresist layer, and forming a circuit pattern on the surface (12) of the substrate (S4), wherein Step S3 comprises implanting a conductive material below the surface (12) of the substrate and below the hole wall (19) of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board (10) comprises the following steps: drilling a hole on a substrate (11), the hole comprising a blind hole and/or a through hole (S1); on a surface (12) of the substrate, forming a photoresist layer having a circuit negative image (S2); forming a conductive seed layer on the surface (12) of the substrate and a hole wall (19) of the hole (S3); removing the photoresist layer, and forming a circuit pattern on the surface (12) of the substrate (S4), wherein Step S3 comprises implanting a conductive material below the surface (12) of the substrate and below the hole wall (19) of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board (10) comprises the following steps: drilling a hole on a substrate (11), the hole comprising a blind hole and/or a through hole (S1); on a surface (12) of the substrate, forming a photoresist layer having a circuit negative image (S2); forming a conductive seed layer on the surface (12) of the substrate and a hole wall (19) of the hole (S3); removing the photoresist layer, and forming a circuit pattern on the surface (12) of the substrate (S4), wherein Step S3 comprises implanting a conductive material below the surface (12) of the substrate and below the hole wall (19) of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board (10) comprises the following steps: drilling a hole on a substrate (11), the hole comprising a blind hole and/or a through hole (S1); on a surface (12) of the substrate, forming a photoresist layer having a circuit negative image (S2); forming a conductive seed layer on the surface (12) of the substrate and a hole wall (19) of the hole (S3); removing the photoresist layer, and forming a circuit pattern on the surface (12) of the substrate (S4), wherein Step S3 comprises implanting a conductive material below the surface (12) of the substrate and below the hole wall (19) of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board (10) comprises the following steps: drilling a hole on a substrate (11), the hole comprising a blind hole and/or a through hole (S1); on a surface (12) of the substrate, forming a photoresist layer having a circuit negative image (S2); forming a conductive seed layer on the surface (12) of the substrate and a hole wall (19) of the hole (S3); removing the photoresist layer, and forming a circuit pattern on the surface (12) of the substrate (S4), wherein Step S3 comprises implanting a conductive material below the surface (12) of the substrate and below the hole wall (19) of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

Abstract: Provided is a cathode composition for lithium secondary battery that includes a lithium-chromium-titanium-manganese oxide that has the formula Li[Li(1-x)/3CrxTi(2/3)yMn2(1-x-y)/3]O2 where 0?x?0.3, 0?y?0.3 and 0.1?x+y?0.3, and layered a-LiFeO2 structure. A method of synthesizing the lithium-chromium-titanium manganese oxide includes preparing a first mixed solution by dispersing titanium dioxide (TiO2) in a mixed solution of chrome acetate (Cr3(OH)2(CH3CO2)7) and manganese acetate ((CH3CO2)2Mn.4H2O), adding a lithium hydroxide (LiOH) solution to the first mixed solution to obtain homogeneous precipitates, forming precursor powder that has the formula Li[Li(1-x)/3CrxTi(2/3)yMn2(1-x-y)/3]O2 where 0?x?0.3, 0?y?0.3 and 0.1?x+y?0.3 by heating the homogeneous precipitates, and heating the precursor powder to form oxide powder having a layered structure.

Abstract: Provided is a lithium-cobalt-manganese oxide having the formula Li[CoxLi(1/3?x/3)Mn(2/3?2x/3)]O2(0.05<X<0.9) which provide a stable structure and a superior discharge capacity, and the method of synthesizing of the same. The method of synthesizing the oxides according to the present invention comprises: preparing an aqueous solution of lithium salt, cobalt salt, and manganese salt; forming a gel by burning the aqueous solution; making oxide powder by burning the gel; forming a fine oxide powder having a layered structure by the twice of treatments. The lithium-cobalt-manganese oxide synthesized according to the present invention has a stable and superior electrochemical characteristic. The oxide is synthesized by simple and low cost heat treatment process.

Abstract: A method of preparing layered lithium-chromium-manganese oxides having the formula Li[CrxLi(1/3?x/3) Mn(2/3?2x/3)]O2 where 0.1?X?0.5 for lithium batteries. Homogeneous precipitation is prepared by adding lithium hydroxide (LiOH) solution to a mixed solution of chromium acetate (Cr3(OH)2(CH3CO2)7) and manganese acetate ((CH3CO2)2Mn.4H2O), while precursor powders are prepared by firing the precipitation. After that, the precursor powders are subjected to two heat treatment to yield Li[CrxLi(1/3?x/3) Mn(2/3?2x/3)]O2 with ?-LiFeO2 structure.

Abstract: Provided is a cathode composition for lithium secondary battery that includes a lithium-chromium-titanium-manganese oxide that has the formula Li[Li(1-x)/3CrxTi2/3yMn2(1-x-y)/3]O2, where 0?x?0.3, 0?y?0.3 and 0.1?x+y?0.3, and layered ?-LiFeO2 structure. A method of synthesizing the lithium-chromium-titanium manganese oxide includes preparing a first mixed solution by dispersing titanium dioxide (TiO2) in a mixed solution of chrome acetate (Cr3(OH)2(CH3CO2)7) and manganese acetate ((CH3CO2)2Mn.4H2O), adding a lithium hydroxide (LiOH) solution to the first mixed solution to obtain homogeneous precipitates, forming precursor powder that has the formula Li[Li(1-x)/3CrxTi2/3yMn2(1-x-y)/3]O2 where 0?x?0.3, 0?y?0.3 and 0.1?x+y?0.3 by heating the homogeneous precipitates, and heating the precursor powder to form oxide powder having a layered structure.

Abstract: Provided is a lithium-cobalt-manganese oxide having the formula Li[CoxLi(1/3-x/3)Mn(2/3-2x/3)]O2 (0.05<X<0.9) which provide a stable structure and a superior discharge capacity, and the method of synthesizing of the same. The method of synthesizing the oxides according to the present invention comprises: preparing an aqueous solution of lithium salt, cobalt salt, and manganese salt; forming a gel by burning the aqueous solution; making oxide powder by burning the gel; forming a fine oxide powder having a layered structure by the twice of treatments. The lithium-cobalt-manganese oxide synthesized according to the present invention has a stable and superior electrochemical characteristic. The oxide is synthesized by simple and low cost heat treatment process.

Abstract: Provided is a method for preparing a Li—Mn—Ni oxide for a lithium secondary battery having a composition of Li[NixLi(1/3-2x/3)Mn(2/3-X/3)O2 (0.05<X<0.6), including the steps of: a] preparing an aqueous solution by resolving lithium salt, manganese salt and nickel salt into distilled water; b) forming gel by heating the aqueous solution; c) preparing oxide powder by burning the gel; d) performing a first thermal treatment on the oxide powder, and grinding the resultant; and e) performing a second thermal treatment on the resultant powder, and grinding the resultant. The technology of the present invention can prepare a Li—Mn—Ni oxide having a composition of Li[NixLi(1/3-2x/3)Mn(2/3-x/3)O2 (0.05<X<0.6) to be used as a cathode material of a lithium secondary battery having a stable and excellent electrochemical characteristics.