Abstract: Disclosed in the present disclosure are a resource allocation method and apparatus, an electronic device, and a storage medium, which relates to the field of computer technology. The method includes: determining one or more unallocated compute express link (CXL) memory logical blocks in a CXL memory resource pool in response to determining that a remaining memory capacity of a first host is less than a remaining memory capacity threshold of the first host; selecting a target CXL memory logical block from among the one or more unallocated CXL memory logical blocks in the CXL memory resource pool; and allocating a memory resource corresponding to the target CXL memory logical block to the first host via a CXL switch. This solves the problem of complex management of the CXL memory resource pool.

Abstract: There is provided a low-loss microwave dielectric ceramic having a composition represented by xCaO.yLn2O3.zAl2O3.mTiO2 wherein Ln is Nd or Sm, 25.0 mole %?x?75.0 mole %, 10.0 mole %?y?30.0 mole %, 10.0 mole %?z?30.0 mole %, 0.8 mole %?m?20.0 mole %, x+y+z+m=100 mole %. It has a dielectric constant in the range from 18 to 25, an extremely large Qf value ranging from 80,000 to 200,000 GHz, and a temperature coefficient of resonant frequency tunable in the vicinity of 0. It can make the applications of dielectric resonators, filters, and antennas extended to higher frequency and larger power; it can also be applied to microwave capacitors, temperature-compensated capacitors, microwave substrates, et al.

Abstract: There is provided a low-loss microwave dielectric ceramic having a composition represented by xCaO.yLn2O3.zAl2O3.mTiO2 wherein Ln is Nd or Sm, 25.0 mole %?x?75.0 mole %, 10.0 mole %?y?30.0 mole %, 10.0 mole %?z?30.0 mole %, 0.8 mole %?m?20.0 mole %, x+y+z+m=100 mole %. It has a dielectric constant in the range from 18 to 25, an extremely large Qf value ranging from 80,000 to 200,000 GHz, and a temperature coefficient of resonant frequency tunable in the vicinity of 0. It can make the applications of dielectric resonators, filters, and antennas extended to higher frequency and larger power; it can also be applied to microwave capacitors, temperature-compensated capacitors, microwave substrates, et al.