Patents by Inventor Xiangnan LV

Xiangnan LV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image sensor and method for manufacturing image sensor
    Patent number: 10741603
    Abstract: A method for manufacturing an image sensor comprises: forming a trench around a photodiode, wherein the photodiode comprises a first doped region with a first conductivity type dopant formed in a semiconductor substrate with a second conductivity type dopant; forming a covering portion in the trench, the covering portion with the second conductivity type dopant covering at least a portion of a sidewall or a bottom wall of the trench, wherein a doping concentration of the covering portion is higher than a doping concentration of the semiconductor substrate; and diffusing the second conductivity type dopant in the covering portion into the semiconductor substrate so as to form a second doped region with the second conductivity type dopant surrounding the at least a portion of the sidewall or the bottom wall of the trench.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: August 11, 2020
    Assignee: HUAIAN IMAGING DEVICE MANUFACTURER CORPORATION
    Inventors: Xiaolu Huang, Xiangnan Lv, Yosuke Kitamura
  • IMAGE SENSOR AND METHOD FOR MANUFACTURING IMAGE SENSOR
    Publication number: 20190221601
    Abstract: A method for manufacturing an image sensor comprises: forming a trench around a photodiode, wherein the photodiode comprises a first doped region with a first conductivity type dopant formed in a semiconductor substrate with a second conductivity type dopant; forming a covering portion in the trench, the covering portion with the second conductivity type dopant covering at least a portion of a sidewall or a bottom wall of the trench, wherein a doping concentration of the covering portion is higher than a doping concentration of the semiconductor substrate; and diffusing the second conductivity type dopant in the covering portion into the semiconductor substrate so as to form a second doped region with the second conductivity type dopant surrounding the at least a portion of the sidewall or the bottom wall of the trench.
    Type: Application
    Filed: August 9, 2018
    Publication date: July 18, 2019
    Applicant: HUAIAN IMAGING DEVICE MANUFACTURER CORPORATION
    Inventors: Xiaolu HUANG, Xiangnan LV, Yosuke KITAMURA