Abstract: Disclosed are a time delay integration (TDI)-based image sensor and an imaging method thereof. The TDI-based image sensor includes: a multi-stage linear array including a plurality of single-stage linear arrays arranged along a scanning direction of the image sensor. Each single-stage linear array includes a plurality of pixels arranged along the linear array direction. Each single-stage linear array enters a count mode in response to a first control signal, and enters a transfer mode in response to a second control signal. In the count mode, each single-stage linear array counts optical signals incident on the pixels and obtains a count value, and in the transfer mode, each single-stage linear array stops counting, except for the last single-stage linear array, other single-stage linear arrays each output the obtained current count value to the next single-stage linear array, and the last single-stage linear array outputs the obtained current count value.

Abstract: A photosensitive detector includes an array of detection units, each detection unit having a light-sensing transistor (1), a charge storage transistor (2) and a reading transistor (3), or comprising a light-sensing transistor, a charge transfer transistor (4), a charge storage transistor and a reading transistor. The light-sensing transistor is configured to realize the light-sensing function of the photosensitive detector; the charge storage transistor is configured to store photogenerated charges; the reading transistor is configured to read a signal; and, the charge transfer transistor is configured to control the transfer of the photogenerated charges. The photosensitive detector can realize global shutter and fast reading, and is compatible with the existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array.

Abstract: A two-by-two array consists of four pixels. Each pixel comprises one light-sensing transistor and one reading transistor. Both the light sensing transistor and the reading transistor are formed above a same P-type semiconductor substrate, and have a composite dielectric gate structure. The substrates of the four reading transistors are connected to form a regular octagonal ring structure located in the center of the array. On four sides of the regular octagonal ring structure, four heavily-doped N+ regions are formed on the substrates not covered with the composite dielectric gate, of which every two regions are opposite to each other and form right angles, wherein two opposite heavily-doped N+ regions are connected to form a shared N+ source, and the other two are connected to form a shared N+ drain.

Abstract: A two-by-two array consists of four pixels. Each pixel comprises one light-sensing transistor and one reading transistor. Both the light sensing transistor and the reading transistor are formed above a same P-type semiconductor substrate, and have a composite dielectric gate structure. The substrates of the four reading transistors are connected to form a regular octagonal ring structure located in the center of the array. On four sides of the regular octagonal ring structure, four heavily-doped N+ regions are formed on the substrates not covered with the composite dielectric gate, of which every two regions are opposite to each other and form right angles, wherein two opposite heavily-doped N+ regions are connected to form a shared N+ source, and the other two are connected to form a shared N+ drain.

Abstract: A photosensitive detector includes an array of detectin units, each detection unit having a light-sensing transistor (1), a charge storage transistor (2) and a reading transistor (3), or comprising a light-sensing transistor, a charge transfer transistor (4), a charge storage transistor and a reading transistor. The light-sensing transistor is configured to realize the light-sensing function of the photosensitive detector; the charge storage transistor is configured to store photogenerated charges; the reading transistor is configured to read a signal; and, the charge transfer transistor is configured to control the transfer of the photogenerated charges. The photosensitive detector can realize global shutter and fast reading, and is compatible with the existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array.