Abstract: The present invention relates to a powder dry-pressing molding device and method.

Abstract: An alumina ceramic integrated hot press molding machine and working method thereof, including a pressing and hot pressing device fixed accordingly on a rack, a stirring device inside the hot pressing device, and a hot pressing mold above the hot pressing device; the pressing device enables one path of high-pressure air to act on the mold, and enables the other path to enter the hot pressing device, so the slurry flows into a cavity of the mold; the stirring device stirs the slurry inside the device, so alumina blanks are more evenly distributed therein; and temperature detection components for detecting the temperature of internal oil and the slurry at a slurry outlet are inside the hot pressing device, and the power of an electric heating device is adjusted and controlled in real time according to the temperature detected by the components, to achieve the purpose of accurate temperature control.

Abstract: The present invention relates to a powder dry-pressing molding device and method.

Abstract: An alumina ceramic integrated hot press molding machine and working method thereof, including a pressing and hot pressing device fixed accordingly on a rack, a stirring device inside the hot pressing device, and a hot pressing mold above the hot pressing device; the pressing device enables one path of high-pressure air to act on the mold, and enables the other path to enter the hot pressing device, so the slurry flows into a cavity of the mold; the stirring device stirs the slurry inside the device, so alumina blanks are more evenly distributed therein; and temperature detection components for detecting the temperature of internal oil and the slurry at a slurry outlet are inside the hot pressing device, and the power of an electric heating device is adjusted and controlled in real time according to the temperature detected by the components, to achieve the purpose of accurate temperature control.

Abstract: A customized posterior atlantoaxial reduction fixator with screws and rods, including two supporting-screws, two pulling-screws, two variable cross section fixing rods, a bracing beam, two lock nuts and two pressing rod nuts. Each of the supporting-screws includes a first head and a first body, and each of the pulling-screws includes a second head and a second body; tips of both the first body and the second body are provided with a tapered thread; both the first head and the second head are provided with nail grooves inside, with U-shaped grooves on the sides; each of the a plurality of nail grooves is provided with an internal thread inside; the second head is provided with a long arm nail groove, with an annular recess configured on the middle part of an outer wall.

Abstract: The invention discloses a screw-rod instrument specially used for posterior atlantoaxial vertebrae fixation, comprising two pulling-screws (2), two supporting-screws (1), two variable cross section fixing rods (3), two lock nuts (4) and a bracing beam (5).

Abstract: An internal gettering process for a Czochralski silicon wafers comprises: (1) heating a Cz silicon wafer to 1200-1250° C. at a heating rate of 50-100° C./s under a nitrogen atmosphere, maintaining for 30-150 seconds, cooling the Cz silicon wafer to 800-1000° C. first at a cooling rate of 5-50° C./s, and then cooling the Cz silicon wafer naturally; (2) annealing the Cz silicon wafer obtained in the step (1) at 800-900° C. under an argon atmosphere for a period of 8-16 hours. The present invention only involves two heat treatment steps which require lower temperature and shorter time comparing to the conventional processes. The density of the bulk microdefects and the width of the denuded zone can be easily controlled by the temperature, duration and cooling rate of rapid thermal processing in the first step.

Abstract: An internal gettering process for a Czochralski silicon wafers comprises: (1) heating a Cz silicon wafer to 1200-1250° C. at a heating rate of 50-100° C./s under a nitrogen atmosphere, maintaining for 30-150 seconds, cooling the Cz silicon wafer to 800-1000° C. first at a cooling rate of 5-50° C./s, and then cooling the Cz silicon wafer naturally; (2) annealing the Cz silicon wafer obtained in the step (1) at 800-900° C. under an argon atmosphere for a period of 8-16 hours. The present invention only involves two heat treatment steps which require lower temperature and shorter time comparing to the conventional processes. The density of the bulk microdefects and the width of the denuded zone can be easily controlled by the temperature, duration and cooling rate of rapid thermal processing in the first step.