Abstract: Embodiments of the present disclosure provide an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a base substrate, a first electrode pattern, a second electrode pattern, and an active layer pattern disposed on the base substrate, a first electrode protection pattern coating the first electrode pattern, and a second electrode protection pattern coating the second electrode pattern. The active layer pattern is disposed between the first electrode pattern and the second electrode pattern. The first electrode protection pattern and the second electrode protection pattern are connected to two sides of the active layer pattern, respectively. The problem that, the active layer pattern cannot be connected to the first electrode pattern and the second electrode pattern due to the surface oxidation, when the first electrode pattern and the second electrode pattern adopt material with low resistance characteristic, is avoided, thus increasing the product yield.

Abstract: The invention provide a flexible substrate and manufacturing method thereof, flexible display panel and flexible display device, wherein the flexible substrate comprises a first film layer and a second film layer, and further comprises a first flexible layer and a second flexible layer; the first film layer and the second film layer are located between the first flexible layer and the second flexible layer; the first film layer and the first flexible layer are bonded with each other, and the second film layer and the second flexible layer are bonded with each other; when the flexible substrate bends towards a first side, the first film layer and the second film layer can contact each other and form electric connection as the first flexible layer and the second flexible layer bend; and when the flexible substrate bends towards a second side or does not bend, the first film layer and the second film layer can be separated from each other and disconnect the electric connection as the first flexible layer and the

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The array substrate comprises: a base substrate and an electrode arranged on the base substrate. The electrode comprises: an aluminum layer or an aluminum alloy layer on the base substrate; and a first barrier layer arranged on the aluminum layer or the aluminum alloy layer and configured for preventing the aluminum layer or the aluminum alloy layer from producing hillocks. The array substrate can eliminate bad phenomenon that the metal aluminum or aluminum alloy formed on the base substrate produces hillocks when subjected to high temperature.

Abstract: Embodiments of the invention provide an array substrate and a method of manufacturing the same. The method comprises: forming a gate electrode pattern, a gate insulation layer, an active layer pattern and an etching stopping layer on a substrate; forming a photoresist layer on the etching stopping layer; performing a single patterning process on the photoresist layer, such that photoresist in the first region is partially etched off, photoresist in the second region is completely etched off, and photoresist in the third region is completely remained; and performing a single etching process, such that residual photoresist in the first region and a portion of the etching stopping layer in the first region are etched off, and at the same time, a portion of the etching stopping layer and a portion of the gate insulation layer in the second region are etched off.

Abstract: The present invention provides a pixel unit including a thin film transistor and a pixel electrode, the thin film transistor includes a gate, a source and a drain, and the pixel electrode is electrically connected to the drain through a via hole. An upper end surface of the via hole is connected to the pixel electrode, and a lower end surface of the via hole is connected to the drain. The via hole is a step-shaped hole, and an area of the upper end surface of the via hole is larger than that of the lower end surface of the via hole. The present invention also provides a method of fabricating the pixel unit, an array substrate including the pixel unit, and a display device including the array substrate.

Abstract: A display device, an array substrate and a fabrication method thereof are provided. The array substrate comprises a data line and a gate line, the data line and the gate line intersect with each other to define a pixel region. The pixel region comprises a first thin film transistor and a pixel electrode. The fabrication method comprises: forming an active layer film and a source-drain metal layer on a substrate, and forming an active layer, a source electrode and a drain electrode of the first thin film transistor on the substrate by a single patterning process.

Abstract: A base and a manufacturing method thereof and a display device are provided, so that a problem of faultage of an insulating layer when forming the insulating layer on an aluminum electrode of a substrate is solved. The base includes an aluminum electrode in a first setting pattern on a substrate, and an aluminum oxide layer or an aluminum nitride layer (3) in a second setting pattern provided in a same layer with the aluminum electrode. The first setting pattern and the second setting pattern are complementary to each other.

Abstract: Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected to the active layer by the ohmic contact layer. The ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer.

Abstract: The present invention discloses a thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof and a display device. The thin film transistor comprises a substrate, and a gate, an active layer, a source, a drain and an insulation layer which are provided on the substrate, the source and the drain are provided in the same layer, and the insulation layer is provided between the gate and the source and drain. A gate preformed layer is provided in the same layer as the gate, and the gate is formed in the gate preformed layer. A source/drain preformed layer is provided in the same layer as the source and the drain, and the source and the drain are formed in the source/drain preformed layer.

Abstract: Disclosed is an array substrate, a method of manufacturing the same, and a display device in use of the array substrate. The array substrate includes a gate electrode layer and a pixel electrode layer on a substrate. The gate electrode layer and the pixel electrode layer are stacked in contact with each other. The pixel electrode layer includes a first part and a second part separated from each other, the gate electrode layer includes a first part. The first part of the gate electrode layer and the first part of the pixel electrode layer are positioned as face-to-face. The gate electrode includes the first part of the gate electrode layer and the first part of the pixel electrode layer, and the pixel electrode includes the second part of the pixel electrode layer. The patterns of gate electrode layer and pixel electrode layer are manufactured with the same mask, which reduces the number of masks.

Abstract: The invention provides a display panel and a manufacturing method thereof, and a display device, belongs to the field of display device manufacturing technology, which can solve the following problem in the existing display device: when light transmits the cathode layer which is thin, has high resistance and thus poor conductivity, the display effect is nonuniform. The display panel of the invention comprises a first substrate and a second substrate which are assembled, wherein the second substrate is provided with an organic electroluminescent device thereon, an anode layer of the organic electroluminescent device is far away from the first substrate and an cathode layer thereof is close to the first substrate; and the cathode layer is electrically connected to an auxiliary electrode on a light entering surface of the first substrate through a plurality of conductive spacers spaced at certain intervals, wherein the cathode layer is a transparent electrode layer.

Abstract: A display device, an array substrate and a fabrication method thereof are provided. The array substrate comprises a data line and a gate line, the data line and the gate line intersect with each other to define a pixel region. The pixel region comprises a first thin film transistor and a pixel electrode. The fabrication method comprises: forming an active layer film and a source-drain metal layer on a substrate, and forming an active layer, a source electrode and a drain electrode of the first thin film transistor on the substrate by a single patterning process.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The array substrate comprises: a base substrate and an electrode arranged on the base substrate. The electrode comprises: an aluminum layer or an aluminum alloy layer on the base substrate; and a first barrier layer arranged on the aluminum layer or the aluminum alloy layer and configured for preventing the aluminum layer or the aluminum alloy layer from producing hillocks. The array substrate can eliminate bad phenomenon that the metal aluminum or aluminum alloy formed on the base substrate produces hillocks when subjected to high temperature.

Abstract: Embodiments of the present invention relate to a pixel structure and a manufacturing method thereof. The pixel structure includes: a substrate; an organic light emitting layer, disposed on the substrate; and an organic light gathering layer, disposed on a light exiting side of the organic light emitting layer, wherein light emitted from the organic light emitting layer is incident on the organic light gathering layer which is configured to gather the light emitted from the organic light emitting layer.

Abstract: An array substrate, a display device and a manufacturing method. The array substrate includes a thin film transistor and a pixel electrode (9). The active layer (4) of the thin film transistor is formed by a first region (401) of the oxide semiconductor layer. The oxide semiconductor layer further includes a second region (402). The pixel electrode (9) and the second region (402) of the oxide semiconductor layer (9) are overlapped so as to form a storage capacitor. The second region (402) of the oxide semiconductor layer (9) constitutes a first electrode plate (402) of the storage capacitor; the pixel electrode (9) corresponding to the second region (402) of the oxide semiconductor layer (4) constitutes a second electrode plate (9) of the storage capacitor; and dielectric layers (7, 8) are disposed between the first electrode plate (402) and the second electrode plate (9).

Abstract: The present invention provides a pixel unit including a thin film transistor and a pixel electrode, the thin film transistor includes a gate, a source and a drain, and the pixel electrode is electrically connected to the drain through a via hole. An upper end surface of the via hole is connected to the pixel electrode, and a lower end surface of the via hole is connected to the drain. The via hole is a step-shaped hole, and an area of the upper end surface of the via hole is larger than that of the lower end surface of the via hole. The present invention also provides a method of fabricating the pixel unit, an array substrate including the pixel unit, and a display device including the array substrate.

Abstract: Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected to the active layer by the ohmic contact layer. The ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer.