Abstract: A device for detecting soil nutrients on site, including an extracting grid, an on-site real-time detection assembly and a transfer assembly for transferring a soil extract from the extracting grid to the on-site real-time detection assembly. A soil nutrient detection method using the device and a microfluidic chip are also provided. The microfluidic chip includes a cover plate and a base plate. The base plate includes a soil extract feeding groove, a quantitative feeding groove, a reagent storage groove, and a serpentine groove.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: This disclosure describes an improved etch selectivity of a-C mask during HAR etch processes by using a cyclic etch process. The process has two principle steps: 1) A partial etch using a polymerizing etching recipe with lower O2 and extra polymer generation where a-C mask selectivity to dielectric (e.g. for SiO2 or ONON layers) is high; and 2) A polymer cleaning step using Kr sputter, Xe sputter, NF3, SF6, IF7, IF5, CF4, or other F based etching process, with or without bias, to etch the polymer. The polymer cleaning step may include addition of O containing molecules such as O2, CO, CO2, NO, NO2, N2O, SO2, and/or COS. These steps are repeated between a partial etch process (polymer creating) and polymer cleaning step (cycle etching).

Abstract: A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CaHxIyFz, wherein a=1-10, x?0, y?1, z?0, x+y+z=a, 2a or 2a+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CxHyFzNH, where x=1-6, y=0-13, z=0-13, and a=1-2 or CxHyFzN—R1, where x=1-6, y=0-13, z=0-13, and R1 is a C1-C5 hydrocarbon.

Abstract: Disclosed are pyrazole compounds, as well as pharmaceutical compositions and methods of use thereof. One embodiment is a compound having the structure and pharmaceutically acceptable salts and N-oxides thereof, wherein X1, X2, Z1, Z2, the ring system denoted by “a”, R1, A1A, L1B, A1B, L1A, L2, Q, L3, R3, A4A, L4B, A4B, L4A, R4, L5, and R5 are as described herein. In certain embodiments, compounds disclosed herein disrupt the eIF4E/eiF4G interaction, and can be used to treat hyperproliferative disorder, a neurological disease or disorder, or autism.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: The present invention discloses a method for rapid on-site detection of fentanyl analogs using a miniature mass spectrometer, comprising the following steps: (1) selecting a spotting plate; (2) loading a sample: depositing the sample and 3-nitrobenzonitrile solution in acetonitrile on the spotting plate to form a crystalline mixture; (3) carrying out analysis and detection: setting the parameters of the miniature mass spectrometer, placing the crystalline mixture on the spotting plate in close proximity to the inlet of the miniature mass spectrometer, and facilitating the ionization of the crystalline mixture for the analysis and detection of fentanyl analogs. The method for rapid on-site detection of fentanyl analogs using a miniature mass spectrometer provided by the present invention requires no extraction solvent, no voltage, no laser, no gas, and the method is simple, rapid, and suitable for rapid on-site detection of fentanyl analogs.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Disclosed are methods for forming a high aspect ratio (HAR) structure during a HAR etch process in a substrate in a reaction chamber, the method comprising: sequentially or simultaneously exposing the substrate to a vapor of an etchant including a hydrofluorocarbon or fluorocarbon compound and an additive compound, the substrate having a film disposed thereon and a pattered mask layer disposed on the film; activating a plasma to produce an activated hydrofluorocarbon or fluorocarbon compound and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compound and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

Abstract: Disclosed are pyrazole compounds, as well as pharmaceutical compositions and methods of use thereof. One embodiment is a compound having the structure and pharmaceutically acceptable salts and N-oxides thereof, wherein X1, X2, Z1, Z2, the ring system denoted by “a”, R1, A1A, L1B, A1B, L1A, L2, Q, L3, R3, A4A, L4B, A4B, L4A, R4, L5, and R5 are as described herein. In certain embodiments, compounds disclosed herein disrupt the eIF4E/eiF4G interaction, and can be used to treat hyperproliferative disorder, a neurological disease or disorder, or autism.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: Disclosed are methods of treating hyperproliferative disorders such as cancer, methods of arresting the cell cycle in cancer cells, methods of inhibiting glutathione synthesis in cancer cells, and associated compounds for use and uses in medicaments. In certain embodiments, the methods, uses and compounds are provided with reference to compounds of the structural formula (I), in which X1, X2, Z1, Z2, the ring system denoted by “a”, R1, L1, L2, Q, L3, R3, L4, R4, L5, and R5 are as described herein. In certain embodiments, compounds disclosed herein are especially active against cancers having a mutant KRAS gene.

Abstract: Disclosed are pyrazole compounds, as well as pharmaceutical compositions and methods of use thereof. One embodiment is a compound having the structure (I) and pharmaceutically acceptable salts and/V-oxides thereof, wherein X1, X2, Z1, Z2, the ring system denoted by “a”, R1, A1A, L1B, A1B, L1A, L2, Q, L3, R3, A4A, L4B, A4B, L4A, R4, L5, and R5 are as described herein. In certain embodiments, compounds disclosed herein disrupt the eIF4E/eiF4G interaction, and can be used to treat hyperproliferative disorder, a neurological disease or disorder, or autism.

Abstract: Disclosed are pyrazole compounds, as well as pharmaceutical compositions and methods of use thereof. One embodiment is a compound having the structure (I) and pharmaceutically acceptable salts and/V-oxides thereof, wherein X1, X2, Z1, Z2, the ring system denoted by “a”, R1, A1A, L1B, A1B, L1A, L2, Q, L3, R3, A4A, L4B, A4B, L4A, R4, L5, and R5 are as described herein. In certain embodiments, compounds disclosed herein disrupt the elF4E/eiF4G interaction, and can be used to treat hyperproliferative disorder, a neurological disease or disorder, or autism.

Abstract: A method of forming a low dielectric constant (low-k) dielectric is disclosed. The method includes providing a substrate and forming a dielectric including porogens over the substrate. While subjecting the dielectric to a first pressure, the dielectric is exposed to ultraviolet (UV) radiation. The dielectric is also subject to a second pressure less than 1×10?3 Torr. While subjecting the dielectric to the second pressure, the dielectric is exposed to vacuum UV (VUV) radiation having one or more photon energies greater than 7 eV. Since it is difficult for VUV radiation to travel through a medium at a pressure greater than 10 Torr without being absorbed by intermittent materials, subjecting the dielectric to the second pressure creates a medium wherein the dielectric can be exposed to the VUV radiation. By exposing the dielectric to UV and VUV radiation, the dielectric can achieve a reduced dielectric constant and increased mechanical properties.

Abstract: A method of forming a low dielectric constant (low-k) dielectric is disclosed. The method includes providing a substrate and forming a dielectric including porogens over the substrate. While subjecting the dielectric to a first pressure, the dielectric is exposed to ultraviolet (UV) radiation. The dielectric is also subject to a second pressure less than 1×10?3 Torr. While subjecting the dielectric to the second pressure, the dielectric is exposed to vacuum UV (VUV) radiation having one or more photon energies greater than 7 eV. Since it is difficult for VUV radiation to travel through a medium at a pressure greater than 10 Torr without being absorbed by intermittent materials, subjecting the dielectric to the second pressure creates a medium wherein the dielectric can be exposed to the VUV radiation. By exposing the dielectric to UV and VUV radiation, the dielectric can achieve a reduced dielectric constant and increased mechanical properties.