Abstract: Provided are an on-chip miniature X-ray source and a method for manufacturing the same. The on-chip miniature X-ray source includes: an on-chip miniature electron source; a first insulating spacer provided on an electron-emitting side of the on-chip miniature electron source, where the first insulating spacer has a cavity structure; and an anode provided on the first insulating spacer, where a closed vacuum cavity is formed between the on-chip miniature electron source and the anode. The on-chip miniature X-ray source has the advantages of stable X-ray dose, low working requirements for vacuum, fast switch response, capability of integration and batch fabrication, and can be used in various types of small and portable X-ray detection, analysis and treatment devices.

Abstract: Provided are an on-chip miniature electron source and a method for manufacturing the same. The on-chip miniature electron source includes: a thermal conductive layer; an insulating layer provided on the thermal conductive layer, where the insulating layer is made of a resistive-switching material, and at least one through hole is provided in the insulating layer; and at least one electrode pair provided on the insulating layer, where at least one electrode of the electrode pair is in contact with and connected to the thermal conductive layer via the through hole, where there is a gap between two electrodes of the electrode pair, and a tunnel junction is formed within a region of the insulating layer under the gap. Thus, heat generated by the on-chip micro electron source can be dissipated through the electrode and the thermal conductive layer, thereby significantly improving heat dissipation ability of the on-chip miniature electron source.

Abstract: Provided are an on-chip miniature electron source and a method for manufacturing the same. The on-chip miniature electron source includes: a thermal conductive layer; an insulating layer provided on the thermal conductive layer, where the insulating layer is made of a resistive-switching material, and at least one through hole is provided in the insulating layer; and at least one electrode pair provided on the insulating layer, where at least one electrode of the electrode pair is in contact with and connected to the thermal conductive layer via the through hole, where there is a gap between two electrodes of the electrode pair, and a tunnel junction is formed within a region of the insulating layer under the gap. Thus, heat generated by the on-chip micro electron source can be dissipated through the electrode and the thermal conductive layer, thereby significantly improving heat dissipation ability of the on-chip miniature electron source.

Abstract: An on-chip miniature X-ray source, comprising: an on-chip miniature electron source (10); a first insulating spacer (11) located on one side of the on-chip miniature electron source (10) emitting electrons, the first insulating spacer (11) being of a cavity structure; and an anode (12) located on the first insulating spacer (11), a closed vacuum cavity being formed between the on-chip miniature electron source (10) and the anode (12). The on-chip miniature electron source can be obtained by means of a micromachining technique, further reducing the size thereof, and reducing the manufacturing costs. The on-chip miniature X-ray source has the advantages of stable X-ray dose, low operation vacuum requirement, fast switch response, integrated and mass processing, etc. and can be used in various types of small and portable X-ray detection, analysis and treatment devices.

Abstract: Provided are an on-chip micro electron source and manufacturing method thereof. The on-chip micro electron source is provided with a heat conductive layer (10), and at least one electrode (122) in the same pair of electrodes is connected with the heat conductive layer (10) via a through hole (111) of an insulating layer, such that the heat generated by the on-chip micro electron source can be dissipated through the electrode (122) and the heat conductive layer (10), thereby significantly improving the heat dissipation ability of the on-chip electron source. Therefore, the on-chip micro electron source is capable of integrating multiple single electron sources on the same substrate to form an electron source integration array with a high integration level, enabling the on-chip electron source to have high overall emission current, further meeting more application requirements.

Abstract: A tunneling electro source, an array thereof and methods for making the same are provided. The tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure. The tunneling electron source includes an insulating substrate, and two conductive regions and one insulating region arranged on a surface of the insulating substrate. The insulating region is arranged between the two conductive regions and abuts on the two conductive regions. Minimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm.

Abstract: A tunneling electro source, an array thereof and methods for making the same are provided. The tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure. The tunneling electron source includes an insulating substrate, and two conductive regions and one insulating region arranged on a surface of the insulating substrate. The insulating region is arranged between the two conductive regions and abuts on the two conductive regions. Minimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm.