Abstract: Provided is a control method, an electronic device and a storage medium. The method includes: obtaining a first target image collected by a first collection device and a second target image collected by a second collection device, in a case of it is determined that characteristic information of a mechanical gripper satisfies a first preset requirement; detecting a first center position of the mechanical gripper in the first target image and a second center position of a target spindle with yarn in the second target image; and generating a calibration instruction, in a case of it is determined that a target position relationship between the first center position and the second center position does not satisfy a second preset requirement, where the calibration instruction is used to calibrate a center position of the mechanical gripper or to calibrate a center position of the target spindle with yarn.

Abstract: A method for predicting a size range of a lost circulation channel based on deep learning (DL) is provided. The method includes the following steps: S1: acquiring data of the lost circulation channel, and establishing a prediction dataset of the size range of the lost circulation channel; S2: preprocessing the prediction dataset of the size range of the lost circulation channel, and determining the size range of the lost circulation channel; S3: establishing a prediction model for the size range of the lost circulation channel; and S4: optimizing the prediction model for the size range of the lost circulation channel, and predicting the size range of the lost circulation channel. The method overcomes the shortcomings of conventional methods, for example, the prediction value of the size of the downhole lost circulation channel is single, inaccurate and not real-time.

Abstract: A cloud-edge collaborative processing system includes: an edge computing system, an ICU diagnosis and treatment device, a service terminal device, and a cloud platform. The edge computing system collects multi-source heterogeneous medical data output from the ICU diagnosis and treatment devices and performs preprocessing, stores preprocessed data into an edge database, and connects to the cloud platform for data transmission and business interaction. The cloud platform connects to a plurality of edge computing systems to perform computation and processing of massive data. The medical-staff handheld terminals and the data terminals of wards are used to issue service instructions to the cloud platform to obtain the required third-party-business services.

Abstract: A method for manufacturing a semiconductor device comprising: providing a substrate, wherein an amorphous silicon layer is formed on the substrate; forming an etching auxiliary layer on the amorphous silicon layer, wherein the upper surface of the etching auxiliary layer is flat, and the etching auxiliary layer is made of a single material; and etching the amorphous silicon layer and the etching auxiliary layer to obtain an amorphous silicon layer with a target thickness, wherein the upper surface of the etched amorphous silicon layer is flat.

Abstract: A method for manufacturing a semiconductor device comprising: providing a substrate, wherein an amorphous silicon layer is formed on the substrate; forming an etching auxiliary layer on the amorphous silicon layer, wherein the upper surface of the etching auxiliary layer is flat, and the etching auxiliary layer is made of a single material; and etching the amorphous silicon layer and the etching auxiliary layer to obtain an amorphous silicon layer with a target thickness, wherein the upper surface of the etched amorphous silicon layer is flat.

Abstract: The present invention discloses a short process preparation technology of sintered NdFeB magnets from the NdFeB sludge, which relates to a field of recycle technology of NdFeB sludge. The present invention comprises the following steps: water bath distillation of organics in sludge, ultrasonic cleaning, calcium reduction and diffusion, ultrasonic rinsing in a magnetic field and drying, powders mixing and sintering. NdFeB sludge as raw materials was directly prepared from recycled sintered magnets with high magnetic properties. Most of the organics in the sludge could be removed by a vacuum distillation process with stepwise heating. The ultrasonic rinsing process in a magnetic field could effectively remove the remaining organics. The recycled sintered magnets exhibited good maximum energy product [(BH)max] of 35.26 MGOe. The present invention has important features, such as the short processing time, efficient environmental protection, high recycling rate and effective utilization rate of rare earth metals.

Abstract: A method for manufacturing a semiconductor device includes providing a substrate containing a front-end device that includes a first gate in a first-type transistor region and a second gate in a second-type transistor region, forming an interlayer dielectric layer on the semiconductor substrate, and planarizing the interlayer dielectric layer to expose the surface of the first and second gates. The method also includes forming a hard mask layer on the second gate, removing the first gate using the hard mask layer as a mask to form a trench, forming sequentially a work function metal layer and a metal gate layer in the trench, and removing a portion of the first work function metal layer and a portion of the metal gate layer that are higher than the interlayer dielectric layer to form a metal gate.

Abstract: The present invention discloses a short process preparation technology of sintered NdFeB magnets from the NdFeB sludge, which relates to a field of recycle technology of NdFeB sludge. The present invention comprises the following steps: water bath distillation of organics in sludge, ultrasonic cleaning, calcium reduction and diffusion, ultrasonic rinsing in a magnetic field and drying, powders mixing and sintering. NdFeB sludge as raw materials was directly prepared from recycled sintered magnets with high magnetic properties. Most of the organics in the sludge could be removed by a vacuum distillation process with stepwise heating. The ultrasonic rinsing process in a magnetic field could effectively remove the remaining organics. The recycled sintered magnets exhibited good maximum energy product [(BH)max] of 35.26 MGOe. The present invention has important features, such as the short processing time, efficient environmental protection, high recycling rate and effective utilization rate of rare earth metals.

Abstract: A method for processing a wafer (in a process of manufacturing semiconductor devices) may include the following steps: using a first slurry set to perform a first chemical mechanical polishing process on the wafer, wherein the wafer includes a plurality of metal gate structures; using a second slurry set to perform a second chemical mechanical polishing process on the wafer, wherein a concentration of a slurry material in the second slurry set is less than a concentration of the slurry material in the first slurry set; performing a cleaning process on the wafer; and providing an anti-reflective coating on the wafer.

Abstract: A method for processing a wafer (in a process of manufacturing semiconductor devices) may include the following steps: using a first slurry set to perform a first chemical mechanical polishing process on the wafer, wherein the wafer includes a plurality of metal gate structures; using a second slurry set to perform a second chemical mechanical polishing process on the wafer, wherein a concentration of a slurry material in the second slurry set is less than a concentration of the slurry material in the first slurry set; performing a cleaning process on the wafer; and providing an anti-reflective coating on the wafer.

Abstract: A method for manufacturing a semiconductor device includes providing a substrate containing a front-end device that includes a first gate in a first-type transistor region and a second gate in a second-type transistor region, forming an interlayer dielectric layer on the semiconductor substrate, and planarizing the interlayer dielectric layer to expose the surface of the first and second gates. The method also includes forming a hard mask layer on the second gate, removing the first gate using the hard mask layer as a mask to form a trench, forming sequentially a work function metal layer and a metal gate layer in the trench, and removing a portion of the first work function metal layer and a portion of the metal gate layer that are higher than the interlayer dielectric layer to form a metal gate.