Abstract: A hybrid integrated optoelectronic chip including an optoelectronic chip and a silicon photonic chip, a material of the optoelectronic chip being different from a material of the silicon photonic chip. The optoelectronic chip includes at least one first waveguide. The silicon photonic chip includes at least one second waveguide and an installation recess. The optoelectronic chip is installed in the installation recess, and the first waveguide is optically connected to the second waveguide.

Abstract: A traveling wave electrode modulator and a photonic integrated chip including the same. The traveling wave electrode modulator comprises a silicon base, an optical waveguide and a doped transitional area disposed in the silicon base, and a traveling wave electrode structure electrically connected to the transitional area. The traveling wave electrode structure comprises at least one layer of a continuous electrode continuously extending along the direction of extension of the optical waveguide, at least one layer of a periodic electrode periodically disposed along the direction of extension of the optical waveguide, and a conductive structure. The continuous electrode is electrically connected to the periodic electrode via the conductive structure, and the traveling wave electrode structure is electrically connected to the transitional area via the conductive structure.

Abstract: Provided are a silicon-based tunable filter, laser and an optical module. The tunable laser comprises a semiconductor optical amplifier and a silicon photonic integrated chip, wherein a first coupler, a phase regulator and a tunable filter are provided on the silicon photonic integrated chip; the tunable filter comprises a flat-top band-pass filter structure, a Mach-Zehnder interferometry (MZI) structure and a micro ring resonation (MRR) structure, which are cascaded; gain light emitted by the semiconductor optical amplifier is coupled to the silicon photonic integrated chip by means of the first coupler, and a narrowband filtered optical signal is output by means of the tunable filter; and the phase of the gain light is regulated by means of the phase regulator so as to output single-peak narrowband laser light with a tunable target wavelength.

Abstract: A wavelength division multiplexer/demultiplexer, a photonic integrated chip, and an optical module are provided. The wavelength division multiplexer/demultiplexer includes a substrate, a bus waveguide provided on the substrate, and at least two wavelength division multiplexing/demultiplexing units provided on the bus waveguide. Each of the at least two wavelength division multiplexing/demultiplexing units includes a mode multiplexer and an asymmetric Bragg grating. The mode multiplexer includes a first port, a second port, and a third port. The third port is connected to the asymmetric Bragg grating, so as to input a light in a TE1 mode or a higher-order mode to the asymmetric Bragg grating. The asymmetric Bragg grating transmits light containing wavelengths other than a wavelength ?i. A grating period of the asymmetric Bragg grating and the wavelength ?i satisfy a resonance condition.

Abstract: Methods and systems are provided for assembly of coin components. Two or more coin components are received in an assembly station having at least two assembling members. The assembling members may be configured to form a chamber comprising the cavities and at least one assembling member may be movable over an assembling path. A merging force may be applied for assembling the coin components together to allow continuous production of joined coin components such that when the movable assembling member travels along the assembling path, one coin component locates within the other, thereby forming a coin assembly over a non-zero distance.

Abstract: An electro-optic modulator includes a base plate, an optical waveguide, at least one set of modulation electrodes, and an electromagnetic shielding structure. The electromagnetic shielding structure includes a top shielding member covering the set of modulation electrodes from above, and a side shielding member disposed on two sides of the set of modulation electrodes. At least a portion of the side shielding member extends into the base plate to isolate the set of modulation electrodes.

Abstract: A silicon-based electro-optic modulator includes a substrate layer, an insulation layer, and an optical waveguide layer stacked sequentially, traveling wave electrodes disposed above the optical waveguide layer, and a metal grating structure periodically configured along the direction in which an electrical signal propagates in the traveling wave electrodes. The metal grating structure is disposed above the optical waveguide layer.

Abstract: A waveguide photoelectric detector, comprising: a substrate comprising a silicon layer, the silicon layer having a silicon waveguide formed thereon; an active layer dispose on the silicon waveguide, the active layer having a first doped region formed thereon; a horizontal PIN junction formed at an area of the silicon layer below the active layer, the horizontal PIN junction comprising a second doped region, an intrinsic region, and a third doped region. A doping type of the second doped region is the same as that of the first doped region. One end of the second doped region near the intrinsic region is connected to the first doped region. The third doped region and the first doped region form a vertical PIN junction.

Abstract: A composite coin, coin blank, medal or token structure provides an inner stack, an outer ring surrounding the inner stack, and a separator, an authentication method and method of manufacture for the same. The inner stack comprises one or more inserts stacked on top of each other. The separator is disposed between the outer ring and the inner stack separating the outer ring from the inner stack and separating the plurality of inserts from each other.

Abstract: A hybrid integrated optoelectronic chip including an optoelectronic chip and a silicon photonic chip, a material of the optoelectronic chip being different from a material of the silicon photonic chip. The optoelectronic chip includes at least one first waveguide. The silicon photonic chip includes at least one second waveguide and an installation recess. The optoelectronic chip is installed in the installation recess, and the first waveguide is optically connected to the second waveguide.

Abstract: A waveguide photoelectric detector, comprising: a substrate comprising a silicon layer, the silicon layer having a silicon waveguide formed thereon; an active layer dispose on the silicon waveguide, the active layer having a first doped region formed thereon; a horizontal PIN junction formed at an area of the silicon layer below the active layer, the horizontal PIN junction comprising a second doped region, an intrinsic region, and a third doped region. A doping type of the second doped region is the same as that of the first doped region. One end of the second doped region near the intrinsic region is connected to the first doped region. The third doped region and the first doped region form a vertical PIN junction.

Abstract: An electro-optic modulator includes a doped structure disposed on a top silicon layer of a substrate. The doped structure includes an optical waveguide, and a first P-type doped region and a first N-type doped region disposed respectively on two sides of the optical waveguide. The first P-type doped region is connected to the optical waveguide by means of a plurality of P-type doped link arms, and the first N-type doped region is connected to the optical waveguide by means of a plurality of N-type doped link arms. End portions of the plurality of P-type doped link arms and end portions of the plurality of N-type doped link arms are alternately arranged along a direction of light propagation to form PN junction depletion layers. The PN junction depletion layers are periodically arranged along the direction of light propagation to form the optical waveguide.

Abstract: An electro-optic modulator includes a base plate, an optical waveguide, at least one set of modulation electrodes, and an electromagnetic shielding structure. The electromagnetic shielding structure includes a top shielding member covering the set of modulation electrodes from above, and a side shielding member disposed on two sides of the set of modulation electrodes. At least a portion of the side shielding member extends into the base plate to isolate the set of modulation electrodes.

Abstract: A silicon-based electro-optic modulator includes a substrate layer, an insulation layer, and an optical waveguide layer stacked sequentially, traveling wave electrodes disposed above the optical waveguide layer, and a metal grating structure periodically configured along the direction in which an electrical signal propagates in the traveling wave electrodes. The metal grating structure is disposed above the optical waveguide layer.

Abstract: A composite coin, coin black, medal or token structure provides an inner stack, an outer ring surrounding the inner stack, and a separator, an authentication method and method of manufacture for the same. The inner stack comprises one or more inserts stacked on top of each other. The separator is disposed between the outer ring and the inner stack separating the outer ring from the inner stack and separating the plurality of inserts from each other.

Abstract: An electro-optic modulator includes a doped structure disposed on a top silicon layer of a substrate. The doped structure includes an optical waveguide, and a first P-type doped region and a first N-type doped region disposed respectively on two sides of the optical waveguide. The first P-type doped region is connected to the optical waveguide by means of a plurality of P-type doped link arms, and the first N-type doped region is connected to the optical waveguide by means of a plurality of N-type doped link arms. End portions of the plurality of P-type doped link arms and end portions of the plurality of N-type doped link arms are alternately arranged along a direction of light propagation to form PN junction depletion layers. The PN junction depletion layers are periodically arranged along the direction of light propagation to form the optical waveguide.

Abstract: Golden bronze appearance article, multiple-layer substrate, related methods and uses thereof, particularly for coinage blanks. Methods of producing an article having a golden bronze appearance include annealing a multiple-layer substrate at an annealing temperature for an annealing residence time. The multiple-layer substrate includes a core, contiguous to a copper layer and subsequent tin layer. The annealing temperature and annealing residence time are controlled in accordance with each other for allowing diffusion of the tin layer into the copper layer and producing an annealed substrate comprising an inter-diffused outer bronze layer having a golden appearance. The tin layer thickness is in accordance to the copper layer thickness such that the inter-diffused outer bronze layer has a tin content between about 8% wt. and about 15.8% wt. The core has a sufficiently low content of nickel to reduce or prevent formation of intermetallic compound comprising tin and nickel proximate to the core during annealing.

Abstract: A method of treating aluminum or aluminum alloy includes providing an aluminum or aluminum alloy substrate; depositing a first zincating layer on the substrate by zincate immersion; stripping off the first zincating layer; depositing a second zincating layer on the substrate by zincate immersion; stripping off the second zincating layer; and depositing a third zincating layer on the substrate by zincate immersion.

Abstract: Golden bronze appearance article, multiple-layer substrate, related methods and uses thereof, particularly for coinage blanks. Methods of producing an article having a golden bronze appearance include annealing a multiple-layer substrate at an annealing temperature for an annealing residence time. The multiple-layer substrate includes a core, contiguous to a copper layer and subsequent tin layer. The annealing temperature and annealing residence time are controlled in accordance with each other for allowing diffusion of the tin layer into the copper layer and producing an annealed substrate comprising an inter-diffused outer bronze layer having a golden appearance. The tin layer thickness is in accordance to the copper layer thickness such that the inter-diffused outer bronze layer has a tin content between about 8% wt. and about 15.8% wt. The core has a sufficiently low content of nickel to reduce or prevent formation of intermetallic compound comprising tin and nickel proximate to the core during annealing.

Abstract: Generally, the present disclosure relates to a composite structure having at least three different components, and a process for manufacturing the same. The structure may be, but need not be, a metal coin. In one embodiment, the structure comprises an outer ring and two inserts stacked on top of each other and disposed within the outer ring. The outer ring and each of the two inserts are made of different materials. The outer ring and each of the inserts are locked together by a plurality of recesses formed in outer circumferential surfaces of the inserts. The structure may further comprise at least one interlayer disposed between the two inserts for adhering the two inserts to one another. The three major components and the interlayer may be made into a single structure by a striking force during coining or striking.