Abstract: A method for fabricating a semiconductor structure includes when a chip under test releases an ESD current, detecting position information of photons emitted from the chip under test due to releasing of the ESD current; acquiring an image of an ESD path based on the detected position information of the photons; and determining whether the ESD path corresponding to the chip under test is normal based on the image of the ESD path and a layout image of the chip under test.

Abstract: A method for fabricating a semiconductor structure includes when a chip under test releases an ESD current, detecting position information of photons emitted from the chip under test due to releasing of the ESD current; acquiring an image of an ESD path based on the detected position information of the photons; and determining whether the ESD path corresponding to the chip under test is normal based on the image of the ESD path and a layout image of the chip under test.

Abstract: A method for fabricating an integrated circuit device, e.g., CMOS image sensor. The method includes providing a semiconductor substrate, which has a first device region and a second device region. The method forms a gate polysilicon layer overlying the first and second device regions. The method forms a silicide layer overlying the gate polysilicon layer. The method patterns the silicide layer and gate polysilicon layer to form a first silicided gate structure in the first device region and a second silicided gate structure in the second device region. The method also includes forming a blocking layer overlying the second device region. The method forms a silicide material overlying a first source region and a first drain region associated with the first silicided gate structure, and maintaining a second source region and a second drain region associated with the second silicided gate structure free from any silicide using the blocking layer.

Abstract: A method for fabricating an integrated circuit device, e.g., CMOS image sensor. The method includes providing a semiconductor substrate, which has a first device region and a second device region. The method forms a gate polysilicon layer overlying the first and second device regions. The method forms a silicide layer overlying the gate polysilicon layer. The method patterns the silicide layer and gate polysilicon layer to form a first silicided gate structure in the first device region and a second silicided gate structure in the second device region. The method also includes forming a blocking layer overlying the second device region. The method forms a silicide material overlying a first source region and a first drain region associated with the first silicided gate structure, and maintaining a second source region and a second drain region associated with the second silicided gate structure free from any silicide using the blocking layer.