Abstract: An evaluation apparatus is taught to nondestructively characterize the electroluminescence behavior of the semiconductor-based or organic small-molecule or polymer-based light-emitting material as the finished light-emitting device functions through electroluminescence. An electrode probe is used to temporarily form a light-emitting device through forming an intimate electrical contact to the surface of the light emitting material. A testing system is provided for applying an electrical stimulus to the electrode probe and temporarily formed device and for measuring the electrical and optical/electroluminescence response to the electrical stimulus. The electrical and optical properties of the light-emitting material can be nondestructively determined from the measured response.

Abstract: An evaluation apparatus is taught to nondestructively characterize the electroluminescence behavior of the semiconductor-based or organic small-molecule or polymer-based light-emitting material as the finished light-emitting device functions through electroluminescence. An electrode probe is used to temporarily form a light-emitting device through forming an intimate electrical contact to the surface of the light emitting material. A testing system is provided for applying an electrical stimulus to the electrode probe and temporarily formed device and for measuring the electrical and optical/electroluminescence response to the electrical stimulus. The electrical and optical properties of the light-emitting material can be nondestructively determined from the measured response.

Abstract: An evaluation apparatus is taught to nondestructively characterize the material that can be any type of any semiconductor or dielectric materials, or a coating or film deposit on the semiconductor wafer. An electrode probe is used to temporarily form a Schottky or metal oxide semiconductor (MOS) device through forming an intimate electrical contact to the surface of the material. A testing system is provided for applying an electrical stimulus to the temporarily formed device through the electrode probe, and for measuring the response to the electrical stimulus. Various properties of the material can be nondestructively determined from the measured response.

Abstract: A system and method for detecting defects in semiconductor wafers in a rapid non-destructive manner. Defects in semiconductor wafers can include micropipes and screw dislocations, stress striations, planer defects, polytype inclusions, and others. When a wafer is illuminated by polarized light, the defects induce birefringence of the polarized light that can be visualized by a polariscope to detect defects in wafers. Defects can cause linearly inputted polarized light to emerge as elliptically polarized light after transmission through a wafer having defects. Placing the wafer between a set of polarizers under the cross poles condition allows for a rapid non-destructive system and method for delineating and locating defects within a semiconductor wafer.

Abstract: A system and method for detecting defects in semiconductor wafers in a rapid non-destructive manner. Defects in semiconductor wafers can include micropipes and screw dislocations, stress striations, planer defects, polytype inclusions, and others. When a wafer is illuminated by polarized light, the defects induce birefringence of the polarized light that can be visualized by a polariscope to detect defects in wafers. Defects can cause linearly inputted polarized light to emerge as elliptically polarized light after transmission through a wafer having defects. Placing the wafer between a set of polarizers under the cross poles condition allows for a rapid non-destructive system and method for delineating and locating defects within a semiconductor wafer.

Abstract: An improved magneto optical current transducer for measuring electrical current is taught that significantly reduces birefringence resulting from thermal transients and construction-induced stresses. The transducer includes a housing made of a material that readily transfers heat throughout itself. Inside the housing and surrounding the magneto optical material is a buffer made of a material that does not readily tranfer heat from the housing to the magneto optical material, but rather slows its transference to that material material. The buffer material has a thermal expansion coefficient that is preferably very close to that of the magneto optical material, so that when the magneto optical material responds to changes in its temperature by expanding or contracting, the buffer expands with it at very nearly the same rate to avoid stresses.