Abstract: In one embodiment, the process comprises depositing a CVD metal oxide layer on the substrate at a substrate temperature of less than or equal to about 480° C. and annealing the metal oxide layer. In one aspect, annealing comprises providing a first substrate temperature between abut 600° C. and 900° C., maintaining the first substrate temperature for a time period of between about 0.1 seconds and 30 minutes, providing a second substrate temperature between about 500° C. to 600° C., and maintaining the second substrate temperature for a time period of at least 10 minutes. In another embodiment, the process comprises depositing a first electrode; depositing a CVD metal oxide layer on the first electrode at a substrate temperature of less than or equal to about 480° C.; and depositing a second electrode on the oxide layer. In one aspect the metal oxide layer is annealed prior to deposition of the second electrode.