Abstract: This invention provides a semiconductor device and a manufacturing method thereof.

Abstract: Embodiments of the present disclosure provide a message feedback method and apparatus for carrier aggregation. The method includes: receiving, by a terminal in a first downlink subframe on a carrier aggregation group, a data packet sent by a base station, where the carrier aggregation group includes a first carrier and a second carrier; determining a first timing, based on a subframe configuration for the carrier aggregation group and a mapping relationship between subframe configurations for carrier aggregation groups and timings; determining a first uplink subframe from subframes on the carrier aggregation group based on the first timing; and sending, to the base station, a feedback message in the first uplink subframe. In this way, the first uplink subframe is determined on the entire carrier group for sending the feedback message, and a selectable range is larger.

Abstract: Described herein are novel silyl-substituted hydrazine and silyl-substituted diamine precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.

Abstract: A method includes for a designated pilot symbol of at least one pilot symbol to be inserted into a data sequence, determining a first subcarrier and a second subcarrier adjacent to a position of the designated pilot symbol in a frequency domain; at least separately determining a first position and a second position on the first subcarrier and the second subcarrier; determining a first symbol and a second symbol, so that the first symbol is capable of neutralizing interference on the designated pilot symbol of data symbols in positions other than the first position within a predetermined range of the first subcarrier, and the second symbol is capable of neutralizing interference on the designated pilot symbol of data symbols in positions other than the second position within a predetermined range of the second subcarrier; and respectively inserting the first symbol and the second symbol in the first and second positions.

Abstract: A test apparatus for simulating a seismic dynamic response of an underground cavern includes a loading frame, an overlying model and an underlying model of the underground cavern, a static loading device, a dynamic loading device and a measuring device. A vertical load and a horizontal load are separately applied by the static loading device to the overlying model to simulate real vertical and horizontal in-situ stresses of the in-situ underground cavern. A seismic dynamic load is applied by the dynamic loading device to the underlying model, and then acts on the overlying model to simulate a real seismic ground motion on the in-situ underground cavern. In this way, the present invention satisfies simulation requirements for the seismic dynamic response of the underground cavern to implement a high-fidelity simulation on the underground cavern through unified loading of the in-situ stress static load and the seismic dynamic load.

Abstract: A contactor including a pedestal. The pedestal is of a step structure having notches in two ends. The step structure includes a first step and a second step from bottom to top and is covered with a cover body having a matched shape. A part, which protrudes out of the second step, at each of two ends of the first step, is provided with a first mounting groove in which a control terminal and a power terminal that are spaced apart from each other are mounted, and the cover body is provided with a first wiring port corresponding to the control terminal and a second wiring port corresponding to the power terminal. Each of two ends of the second step is provided with a second mounting groove in which an auxiliary terminal is mounted, and the cover body is provided with a third wiring port which corresponds to the auxiliary terminal mounted in the second mounting groove. The contactor has a simple structure, and wiring areas can be distinguished.

Abstract: The present invention provides a gate-all-around quantum gradient-doped nano-sheet complementary inverter may comprise a P-type field effect transistor (FET) and an N-type FET. The P-type FET may comprise a P-type semiconductor nano-sheet channel, a first gate dielectric layer fully surrounding the P-type semiconductor nano-sheet channel, a first gate layer, and a source and a gate area, arranged at two ends of the channel. The N-type FET may comprise an N-type semiconductor nano-sheet channel, a second gate dielectric layer fully surrounding the N-type semiconductor nano-sheet channel, a second gate layer, and a source and a gate area, arranged at two ends of the channel. A common gate electrode may be arranged to fully surround the first and second gate layers. The doping concentration of the P-type and N-type semiconductor nano-sheet channels, which are arranged laterally, side by side, may be in gradient descent from the surface to the center.

Abstract: The present disclosure discloses a blade seat assembly including a blade assembly, a clasp assembly, and a blade seat. The blade assembly includes a blade and a shaft, the blade being connected to one end of the shaft. The blade seat defines a mounting groove, and the other end of the shaft detachably is connected to the mounting groove via the clasp assembly. The present disclosure also provides a blending cup assembly and a food processor, which use the blade seat assembly. The technical scheme of the present disclosure aims to enable the blade assembly to be disassembled.

Abstract: This disclosure provides an array substrate, a method for fabricating the same, a display panel, and a display device, where a first photo-resist layer is stripped in a changed order in that the first photo-resist layer on a source-drain is stripped through wet etching before a ohm contact layer film and an active layer film are etched in an electrically-conductive channel area (i.e., an electrically-conductive channel of a TFT is etched) to form an ohm contact layer and an active layer.

Abstract: Immersive web-based simulator for digital assistant-based applications is provided. A system can provide, for display in a web browser, an inner iframe configured to load, in a secure, access restricted computing environment, an application configured to integrate with a digital assistant. The application can be provided by a third-party developer device. The system can provide, for display in a web browser, an outer iframe configured with a two-way communication protocol to communicate with the inner iframe. The system can provide a state machine to identify a current state of the application loaded in the inner frame, and load a next state of the application responsive to a control input.

Abstract: Techniques are described determining electrodes that are proximate or distal to location of an oscillatory signal source in a patient based on current source densities (CSDs). Processing circuitry may determine, for one or more electrodes of a plurality of electrodes, respective time-varying measurements of CSDs, aggregate, for the one or more electrodes of the plurality electrodes, the respective time-varying measurements of the CSDs to generate respective average level values for the one or more electrodes of the plurality of electrodes, determine, for one or more electrodes of the plurality of electrodes, respective phase-magnitude representations of the time-varying measurements of the CSDs. The respective phase-magnitude representations are indicative of respective magnitudes and phases of a particular frequency component of respective time-varying measurements of the CSDs.

Abstract: A depth calculation processor, a data processing method, and a 3D image device are disclosed herein. The depth calculation processor includes: two input ports to receive a first image data, wherein the first image data comprises structured light image acquired under projection of structured light; an input switch connected to the input ports and to convey all or some of the first image data from the input ports; a data processing engine connected to the input switch and to process the first image data that is output through the input switch and to output a second image data, wherein the second image data comprises a depth map, wherein the data processing engine comprises a depth processing engine to process the structured light image to obtain the depth map; and one output port connected to the data processing engine and to output the second image data to a main device.

Abstract: A computer-implemented method and a computer system are proposed. According to the method, one or more candidate target applications are obtained in response to determination of one or more pieces of source contents from one or more source applications. A target application is determined from the one or more candidate target applications, wherein the one or more candidate target applications are shown one by one in a pre-defined order. The one or more pieces of source contents are pasted into one or more target areas in response to determining the one or more target areas in the target application.

Abstract: A method and apparatus for determining pitch and yaw of an elongated interface object as it interacts with a touchscreen surface. A touch image is received, and this touch image has at least a first area that corresponds to an area of the touchscreen that has an elongated interface object positioned at least proximate to it. The elongated interface object has a pitch and a yaw with respect to the touchscreen surface. A first transformation is performed to obtain a first transformation image of the touch image, and a second transformation is performed to obtain a second transformation image of the touch image. The first transformation differs from the second transformation. The yaw is determined for the elongated interface object based on both the first and second transformation images. The pitch is determined based on at least one of the first and second transformation images.

Abstract: An irregular rock sample high-pressure permeation device with an adjustable flow direction and a test method thereof are provided, wherein two blocking mechanisms I and two blocking mechanisms II are arranged inside a cylinder body; partitioning plates are respectively arranged on both sides of each of the blocking mechanisms I; water blocking plates are respectively arranged at both sides of each of the blocking mechanisms I; one end of each of the water blocking plates is connected to the sidewall of each of the partitioning plates, and the other end of each of the water blocking plates is connected to an internal portion of the cylinder body; a water injection pipe is disposed between the water blocking plates on a same side. The present invention combines flexible film amorphous close fit properties and easy charging and discharging of free gas.

Abstract: When a user sees a content item presented by a social networking system, the user may select an option to save the content item. The saved content item may be reinserted in a newsfeed presented to the user, integrated into collections, archived, used for notifications to the user, or otherwise subsequently presented to the user. A plug-in may be used to save content items accessed through websites external to the social networking system. As privacy settings associated with a saved content item are modified, the modified privacy settings are applied to the saved content item, which may prevent the user saving the content item from subsequently viewing the saved content item.

Abstract: The present invention provides a semiconductor structure and method of manufacturing the same. The semiconductor structure includes a substrate and a gate formed on the substrate. The above manufacturing method is used to form a gate on the substrate. The above manufacturing method specifically includes: providing a substrate; forming a trench in an upper portion of the substrate; depositing a gate layer on the substrate, the gate layer including two step portions extending from the outside of the trench to the inside of the trench; etching the gate layer from two ends of the trench along the two step portions toward the center of the trench to form the gate in the trench, wherein the width of the gate is smaller than the width of the trench. The manufacturing method of the present invention can easily and efficiently form a gate having a small critical dimension and precisely controllable on a semiconductor substrate, thereby meeting increasingly stringent gate size requirements.

Abstract: A microporous membrane for filtering and a method for preparing the same, a flat filtering element and a gas filtering article are disclosed. The microporous membrane is composed of following raw materials in parts by weight: 100-110 parts of polyethylene, 27-30 parts of acrylonitrile, 0.1-0.2 parts of dicumyl peroxide, 2-4 parts of plasticizer, 1-2 parts of antimonous oxide, 0.8-1 part of zinc borate, 1-2 parts of antioxidant, 0.8-2 parts of heat stabilizer, 1-2 parts of octylisothiazolinone, 1-3 parts of calcium propionate, 0.7-2 parts of triglycidyl isocyanurate, 4-6 parts of diacetone alcohol, 0.7-1 part of oleic diethanolamide, 0.5-1 part of sodium myrastate and 1-2 parts of glycolic acid.