Abstract: Computer-implemented methods are disclosed for providing an elastic modulus map of an integrated circuit (IC) chip of a chip/device package, for identifying a probable failure site of the chip/device package from the elastic modulus map of the IC chip, for modifying a connector footprint of the chip/device package based on identifying a probable failure site from the elastic modulus map of the IC chip, and for modifying the IC chip based on identifying a probable failure from the elastic modulus map of the IC chip. Each layer of the IC chip may be mapped, and each grid shape of the mapped layers may comprise a metal area and a dielectric area. Grid shapes from each layer of the IC are vertically aligned to provide a combined spring constant for each grid shape, which are then mapped onto the elastic modulus map to identify possible failure sites in the chip/device package.

Abstract: A method of reducing white bump formation and dielectric cracking under controlled collapse chip connections (C4s). The method comprises fabricating a substrate having a plurality of metallization layers, one or more of the layers is of low k dielectric material. The substrate includes a plurality of attachment pads for the C4s. The fabricating comprises selectively forming at least a portion of the substrate with metal fill having a higher Young's modulus of elasticity than any of the one or more layers of low k dielectric material in portions of the substrate located beneath at least some of the attachment pads.

Abstract: Some embodiments provide a method and system for efficiently transferring medical images. Some embodiments receive a medical image in a first platform dependent format of a Picture Archiving and Communication System (PACS). The first platform dependent format is one that is accessible by a first format compliant device that includes a library that specifies how to decode the first format. Some embodiments transform the medical image from the first format to a second format. The second format includes decoded content of the first format that is viewable on a first format non-compliant device. The transformed image is then passed to the device for viewing. Additionally, some embodiments efficiently transfer medical images by identifying image settings for one or more devices and by passing requested images that are optimized by resizing the images according to the image settings of the requesting device.

Abstract: Methods for the fabrication of negative coefficient thermal expansion engineered elements, and particularly, wherein such elements provide for fillers possessing a low or even potentially zero coefficient thermal expansion and which are employable as fillers for polymers possessing high coefficients of thermal expansion. Further, disclosed are novel structures, which are obtained by the inventive methods.

Abstract: A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers.

Abstract: A control method for fan includes the following steps: a temperature value for a heat element is detected by a heat detecting unit, and the temperature value is transmitted to a remote processor; a fan input controlling signal is calculated according to the temperature value; the fan input controlling signal is transmitted to a fan board directly from the remote processor; an input speed information is input to the fan for dissipating the heat element by the fan board according to the fan input controlling signal; an output speed information of the fan is received; and determining whether the fan works as predefined by the fan board according to the output speed information and the input speed information.

Abstract: A control method for fan includes the following steps: a temperature value for a heat element is detected by a heat detecting unit, and the temperature value is transmitted to an infrastructure management module; a fan input control signal is calculated according to the temperature value; the fan input control signal is transmitted to a fan board through the heat detecting unit; an input speed information is input to the fan for dissipating the heat element by the fan board according to the fan input control signal; an output speed information of the fan is received; and determining whether the fan works as predefined by the fan board according to the output speed information and the input speed information.

Abstract: Method, system and computer software for diagnosing a compressor. The method includes generating a feature vector of the compressor, the feature vector of the compressor including components describing states of various parts of the compressor; determining, based on fuzzy constraints, an aggregated anomaly vector corresponding to the feature vector; defining rules for a preset list of possible faults/failure modes of the compressor; calculating a corroborating measure between the aggregated anomaly vector and the rules; and identifying a fault/failure mode of the compressor based on a result of the corroborating measure.

Abstract: Some embodiments of the invention provide a method for monitoring patients in a unit of a hospital, an entire hospital, or several hospitals. In some of these embodiments, the methods receives data pertaining to multiple patients. The method aggregates the data and calculated scores based on the received data. The method also calculates trends associated with the aggregated data and/or the generated scores. The method further displays the aggregated and calculated data in a unified display that facilitates efficient allocation of resources in the hospital unit, the hospital, or the group of hospitals.

Abstract: An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.

Abstract: The present invention is directed to compounds of Formula I: or salt thereof, which are modulators of the glucocorticoid receptor. The compounds and salts of the invention are useful in the treatment of conditions mediated by glucocorticoid receptor activity.

Abstract: A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers.

Abstract: A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

Abstract: A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller.

Abstract: An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.

Abstract: An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.

Abstract: An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.

Abstract: A method for advanced condition monitoring of an asset system includes sensing actual values of an operating condition for an operating regime of the asset system using at least one sensor; estimating sensed values of the operating condition by using an auto-associative neural network; determining a residual vector between the estimated sensed values and the actual values; and performing a fault diagnostic on the residual vector. In another method, an operating space of the asset system is segmented into operating regimes; the auto-associative neural network determines estimates of actual measured values; a residual vector is determined from the auto-associative neural network; a fault diagnostic is performed on the residual vector; and a change of the operation of the asset system is determined by analysis of the residual vector. An alert is provided if necessary. A smart sensor system includes an on-board processing unit for performing the method of the invention.

Abstract: An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.