Patents by Inventor Xiao Jin WANG

Xiao Jin WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer bonding method and structure thereof
    Patent number: 11342185
    Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.
    Type: Grant
    Filed: May 8, 2020
    Date of Patent: May 24, 2022
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Shuai Guo, Jia Wen Wang, Tao Tao Ding, Rui Yuan Xing, Xiao Jin Wang, Jia You Wang, Chun Long Li
  • WAFER BONDING METHOD AND STRUCTURE THEREOF
    Publication number: 20200273706
    Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.
    Type: Application
    Filed: May 8, 2020
    Publication date: August 27, 2020
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Shuai GUO, Jia Wen WANG, Tao Tao DING, Rui Yuan XING, Xiao Jin WANG, Jia You WANG, Chun Long LI
  • Wafer bonding method and structure thereof
    Patent number: 10679854
    Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: June 9, 2020
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Shuai Guo, Jia Wen Wang, Tao Tao Ding, Rui Yuan Xing, Xiao Jin Wang, Jia You Wang, Chun Long Li
  • WAFER BONDING METHOD AND STRUCTURE THEREOF
    Publication number: 20190051524
    Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.
    Type: Application
    Filed: July 26, 2018
    Publication date: February 14, 2019
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Shuai GUO, Jia Wen WANG, Tao Tao DING, Rui Yuan XING, Xiao Jin WANG, Jia You WANG, Chun Long LI