Abstract: A semiconductor package includes a leadframe including a die pad and a plurality of leads including a first lead, wherein the first lead includes a first ball bond. A semiconductor die having a plurality of bond pads including a first bond pad is on the die pad including a second ball bond on the first bond pad and a stitch bond on the second ball bond. A first wirebond connection is between the first ball bond and the stitch bond.

Abstract: A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

Abstract: A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

Abstract: A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

Abstract: A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

Abstract: A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.